KY-C106MS
| Part # | KY-C106MS |
Download  | KY-C106MS |
C106 S
e r
i
e s
4A S CRs
S e
n
s
i
t
i
v
e
Ga te
S CRs
ShenZhenHanKingyuan
Electronic CO.,Ltd
S
C
Rs
C106 S
e r
i
e s
ShenZhenHanKingyuan
Electronic CO.,Ltd
01.
S e
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s
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t
i
v
e
Ga te
S CR
2
1
3
1
2
3
TO-252
TO-251
Sensitive Gate SCR
1
2
3
TO-126
FEATURES
IT(RMS):4A
VGT: 0.8V
VDRM VRRM:600V
APPLICATIONS
Washing machine,vacuums, massager,solid state relay
，
AC Motor speed regulation and so on.
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C106 S
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ShenZhenHanKingyuan
Electronic CO.,Ltd
02.
S e
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Ga te
S CR
Absolute Maximum Ratings
(Tj=25°C unless otherwise specifed)
Symbol Parameter
VDRM
Conditions
Ratings
Unit
Repetitive Peak Off-State Voltage
600
V
VRRM
IT(RMS) R.M.S
On-State Current
4
A
A
IT(AV)
ITSM
I²t
average On-State Current
Surge On-State Current
I²t for fusing
2.5
F=50Hz,tp=10ms
Tp=10ms
30
A
4.5
A²s
A
IGM
Peak Gate Current
tp=20us Tj=110°C
Tj=110°C
0.2
PG(AV)
PGM
Tj
Average Gate Power Dissipation
Peak Gate Power Dissipation
Operating Junction Temperature
Storage Temperature
0.2
W
W
°C
°C
tp=20us Tj=110°C
1
～
～
40~125
40~150
TSTG
Electrical Characteristics
(Tj=25°C unless otherwise specifed)
Symbol Parameter
Test Conditions
Value
Unit
Tc=25°C
Tc=110°C
Tj=25°C
≤5
≤100
≤5
uA
uA
uA
uA
IDRM
IRRM
Repetitive Peak Off-State Current
Repetitive Peak Reverse Current
Tj=110°C
≤100
VTM
VGD
IL
Forward “on” voltage
Gate nontrigger voltage
Latching current
IT=8A tp=380us
VD=VDRM,Tj=125°C
IG=1.2IGT
≤1.7
≥0.2
≤6
V
V
mA
mA
V
IH
Holding current
VD=12V ,IGT=0.1A
VD=12V
≤5
VGT
IGT
Gate trigger voltage
Gate trigger current
≤0.8
≤120
VD=12V,IT=0.1A
uA
Critical-rate of rise of commutation
voltage
dv/dt
VD=2/3VDRM,Tj=110°C,RGK=1KΩ
≥10
V/us
PAGE.02/06
S
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C106 S
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ShenZhenHanKingyuan
Electronic CO.,Ltd
03.
S e
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Ga te
S CR
FIG1
FIG2
RMS on-state current versus case
temperature
Maximum power dissipation versus RMS
on-state current
I
T(RMS)
(A)
P(w)
3
3
2
α=180°
TO-126
TO-251/
2
1
0
TO-252
1
0
Tc (
℃
)
I
T(RMS)
(A)
0
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
FIG3
FIG4
Surge peak on-state current versus
number of cycles
On-state characteristics (maximum
values)
I
TM
(A)
I
TSM
(A)
20
20
tp=10ms
One cycle
10
Tj=Tjmax
15
10
5
1
Tj=25
℃
Number of cycles
10 100
V
TM
(V)
3.0
0.1
0
1
0
1.0
2.0
4.0
5.0
1000
FIG5
FIG6
FIG.6:
Relative variations of gate trigger current,
holding current and latching current versus
junction temperature
Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms, and
corresponging value of I
2
t (dI/dt < 100A/
μ
s)
I
TSM
(A), I t (A s)
300
I
GT
,I
H
,I
L
(Tj)/I
GT
,I
H
,I
L
(Tj=25
℃
)
3.0
I
TSM
2.5
2.0
100
I
GT
1.5
1.0
dI/dt
10
I
H
&I
L
I
2
t
0.5
0.0
Tj (
℃
)
tp(ms)
1
0.01
-40
0
40
80
120
0.1
1
10
PAGE.03/06
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C106 S
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ShenZhenHanKingyuan
Electronic CO.,Ltd
04.
S e
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Ga te
S CR
PACKAGE MECHANICAL DATA
E
B2
A
C2
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
2.20
0.03
0.55
5.10
0.45
2.70
6.00
6.40
4.40
9.35
1.30
1.37
Max.
2.40
0.23
0.65
5.40
0.55
2.90
6.20
6.70
4.70
10.6
1.70
1.50
Min.
0.086
0.001
0.022
0.200
0.018
0.106
0.236
0.252
0.173
0.368
0.051
0.054
Max.
0.095
0.009
0.026
0.213
0.022
0.114
0.244
0.264
0.185
0.417
0.067
0.059
A
A2
B
B2
C
C2
D
C
B
E
G
G
DETAIL A
H
L1
L2
L3
L4
0.8
0.8
4
°
0.031
0.031
4
°
V1
V2
E1
0
°
8
°
0
°
8
°
L2
DETAIL A
TO-252
Dimensions
A
H
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
7.40
10.6
15.3
3.90
1.17
0.66
Max.
7.80
11.2
16.3
4.10
1.47
0.86
Min.
0.291
0.417
0.602
0.154
0.046
0.026
Max.
0.307
0.441
0.642
0.161
0.058
0.034
A
B
C
D
E
F
J
E
2.29
0.090
G
H
J
2.50
1.10
0.45
2.90
1.50
0.60
0.098
0.043
0.018
0.114
0.059
0.024
K
F
K
G
TO-126
PAGE.04/06
S
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C106 S
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ShenZhenHanKingyuan
Electronic CO.,Ltd
05.
S e
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s
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Ga te
S CR
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
2.20
0.90
0.55
5.10
0.76
0.45
0.48
6.00
6.40
Max.
2.40
1.20
0.65
5.40
0.85
0.62
0.62
6.20
6.70
Min.
0.086
0.035
0.022
0.200
0.030
0.018
0.019
0.236
0.252
Max.
0.095
0.047
0.026
0.213
0.033
0.024
0.024
0.244
0.264
A
A2
B
E
B2
A
C2
B2
B3
C
C2
D
B3
B
E
2.30
0.091
G
16.0
8.90
1.80
1.37
17.0
9.40
1.90
1.50
H
0.630
0.350
0.071
0.054
0.669
0.370
0.075
0.059
L
G
C
L1
L2
V1
A2
4°
4°
TO-251
PAGE.05/06
S
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C106 S
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ShenZhenHanKingyuan
Electronic CO.,Ltd
06.
S e
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Ga te
S CR
ShenZhenHanKingyuan
Electronic CO.,Ltd
Information furnished is believed to be accurate and reliable.However,Shenzhen�HanKingyuan�
Electronic assumes no responsibility for the consequences of use of such information nor for any
infringement of patents or other rights of third parties which may result from its use.Specifications
mentioned in this publication are subject to change without notice.This publication supersedes and�
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�
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