KY-KY2304

Part #	KY-KY2304
Download	KY-KY2304

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KY

2304

3

0

V N-Channel Mosfet

SOT-23

FEATURES

●

R

DS(ON)

≤ 39mΩ (3

1

mΩ Typ.)

@V

GS

=10V

●

R

DS(ON)

≤ 52mΩ (4

1

mΩ Typ.)

@V

GS

=4.5V

1.

GATE

2.

SOURCE

3.

DRAIN

APPLICATIONS

●

Load/Power Switching

●

Interfacing Switching

-CHANNEL MOSFET

N

MARKING

2304

2304

:Device Code

MAXIMUM RATINGS (T

a

=25°C unless otherwise noted)

Symbol

Parameter

Max.

30

Units

V

Drain-Source Voltage

Gate-Source Voltage

V

DSS

V

GSS

±

20

V

T

a

= 25

℃

T

a

= 100

℃

4.0

A

I

D

Continuous Drain Current

2.

6

A

note1

Pulsed Drain Current

Power Dissipation

I

DM

P

D

1

6

A

1.0

W

T

a

= 25

℃

Thermal Resistance, Junction to Ambient

R

θ

JA

125

℃

/W

℃

T

J

, T

STG

Operating and Storage

T

e

mperature Range

-55 to +150

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2304

MOSFET ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Off Characteristic

V

(BR)DSS

Drain-Source Breakdown Voltage

V

GS

= 0V,I

D

= 250μA

30

–

–

–

1

V

V

DS

=

3

0V,

–

I

DSS

I

GSS

Zero Gate Voltage Drain Current

Gate to Body Leakage Current

μA

nA

V

GS

= 0

V

, T

J

= 25

℃

V

GS

= ±

20

V

,V

DS

= 0V

–

–

±100

On Characteristics

1.0

1.

4

3

1

2.

2

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage

V

DS

=V

GS

,I

D

= 250μA

V

V

GS

=10V, I

D

=

4

A

–

39

Static Drain-Source

On-Resistance

note

2

mΩ

–

–

4

1

52

V

GS

=4.5V, I

D

=3A

V

DS

=4.5V, I

D

=2.5A

5

2

Forwar

r

d T ansconductance

–

S

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g

Input Capacitance

–

–

–

–

–

–

231

42

–

–

–

–

–

–

pF

pF

pF

nC

nC

nC

V

DS

=

15

V, V

GS

= 0V,

Output Capacitance

f = 1.0MHz

Reverse Transfer Capacitance

T

o

tal Gate Charge

17

4.

1

V

DS

=

15

V, I

D

=3A,

V

GS

=

4.5

V,

0.74

0.66

Q

gs

Q

gd

Gate-Source Charge

Gate-Drain(“Miller”) Charge

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

–

–

–

–

11

48

1

2

1

9

–

–

–

–

ns

ns

ns

ns

V

GS

=

4.5

V, V

DS

=

15

V,

R

G

=

3

Ω, I

D

=3A

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain to Source Diode

I

S

–

–

–

–

–

–

4

A

A

V

Forward Current

I

SM

Maximum Pulsed Drain to Source

Diode Forward Current

16

1.

2

Drain to Source Diode Forward

Voltage

V

GS

= 0

V

,

I

SD

=2.7A,

V

SD

T

J

= 25

℃

Notes: 1.

Repetitive Rating: Pulse width limited by maximum junction temperature

2 .

Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤

2

%

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2304

Typical Performance Characteristics

Figure1. Output

Characteristics

Figure2. Transfer

Characteristics

Figure3. Rdson-Drain

Current

Figure4. Typical

Source-Drain Diode Forward

Voltage

Figure6. Gate

Charge

Figure5. Capacitance

Characteristics

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KY

2304

Typical Performance Characteristics (cont.)

Figure8. Normalized

on Resistance vs.

Temperature

Figure7. Normalized

Breakdown Voltage vs.

Temperature

Figure10. Drain

Current vs.

Ambient

Temperature

Figure9. Safe

Operation Area

Figure11. Transient

Thermal Response Curve

4／5

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KY

2304

SOT-23

PACKAGE OUTLINE DRAWING

Dimensions In Millimeters

Symbol

Dimensions In Inches

Min

Max

Min

Max

A

A1

A2

b

0.900

0.000

0.900

0.300

0.080

2.800

1.200

2.250

1.150

0.100

1.050

0.500

0.150

3.000

1.400

2.550

0.035

0.000

0.035

0.012

0.003

0.110

0.047

0.089

0.045

0.004

0.041

0.020

0.006

0.118

0.055

0.100

c

D

E

E1

e

0.950 TYP

0.550 REF

0.037 TYP

0.022 REF

e1

L

1.800

2.000

0.071

0.079

L1

θ

0.300

0°

0.500

8°

0.012

0°

0.020

8°

5／5