KY-KY2312
| Part # | KY-KY2312 |
Download  | KY-KY2312 |
h
S enZhen
Han
i
K ng
u
Y
an
l
E e
t
c
o
r
nic Co.,Ltd
KY
2312
2
0
V N-Channel Mosfet
SOT-23
FEATURES
● R
DS(ON)
≤
21m
Ω (
16 m
Ω
Typ.)
@V
GS
=
4.5
V
● R
DS(ON)
≤
30mΩ (20 mΩ
Typ.)
@V
GS
=
2
.5V
1.
GATE
2.
SOURCE
3.
DRAIN
APPLICATIONS
●
Battery Protection
●
Load Switch
●
Power Management
-CHANNEL MOSFET
N
MARKING
2312
2312: Device Code
Other marks: “S12”
MAXIMUM RATINGS (T
a
=25°C unless otherwise noted)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
V
DSS
V
GSS
20
±10
V
V
Gate-Source Voltage
5
T
a
= 25
℃
I
D
Continuous Drain Current
A
3.2
T
a
= 100
℃
I
DM
P
D
Pulsed Drain Current
note1
Power Dissipation
20
A
W
1.25
100
T
a
= 25
℃
R
θJA
Thermal Resistance, Junction to Ambient
℃
/W
℃
T
J
, T
STG
Operating and Storage
T
e
mperature Range
-55 to +150
1／5
h
S enZhen
Han
i
K ng
u
Y
an
l
E e
t
c
o
r
nic Co.,Ltd
KY
2312
MOSFET ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V,I
D
=250μA
V
DS
=20V, V
GS
= 0V,
V
DS
=0V, V
GS
= ±10V
20
–
–
–
–
–
1
V
μA
nA
I
GSS
–
±100
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250μA
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=4.7A
V
DS
=10V, I
D
=5A
0.5
0.65
16
20
–
0.9
21
30
–
V
mΩ
S
–
–
Static Drain-Source on-Resistance
note2
Forward Transconductance
6
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
–
–
–
865
105
55
–
–
–
pF
pF
pF
V
DS
=10V, V
GS
=0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
–
–
10
20
32
12
ns
ns
ns
ns
V
DD
=10V, I
D
=4A,
R
G
= 1Ω, V
GEN
=5V,
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
5
A
A
V
Current
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
20
1.2
Drain to Source Diode Forward
V
GS
= 0
V
, I
S
=4A
V
SD
0.75
Voltage
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction
T
e
mperature
2. Pulse
T
e
st: Pulse Width≤300μs, Duty Cycle≤2%
2／5
h
S enZhen
Han
i
K ng
u
Y
an
l
E e
t
c
o
r
nic Co.,Ltd
KY
2312
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. Gate Charge Test Circuit & Waveform
Figure 2. Resistive Switching Test Circuit & Waveforms
Figure 3. Unclamped Inductive Switching Test Circuit & Waveforms
3／5
h
S enZhen
Han
i
K ng
u
Y
an
l
E e
t
c
o
r
nic Co.,Ltd
KY
2312
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 4. Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel)
4／5
h
S enZhen
Han
i
K ng
u
Y
an
l
E e
t
c
o
r
nic Co.,Ltd
KY
2312
SOT-23
PACKAGE OUTLINE DRAWING
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min
Max
Min
Max
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
c
D
E
E1
e
0.950 TYP
0.550 REF
0.037 TYP
0.022 REF
e1
L
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
5／5
