KY-KY3401

Part #KY-KY3401
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KY-KY3401
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nic Co.,Ltd  
KY
3401  
-30
V
P
-Channel Mosfet  
SOT-23  
FEATURES  
● R

DS(ON)

≤
5
5mΩ(
4
5
mΩ
Typ.)  
@V

GS

=
–
10V  
●
R

DS(ON)

≤
68
mΩ(
53
mΩ Typ.)  
@V

GS

=-
4.5
V  
1.
GATE  
2.
SOURCE  
3.
DRAIN  
●
R

DS(ON)

≤
96
mΩ(
72
mΩ Typ.)  
@V

GS

=-
2
.5V  
APPLICATIONS  
● PWM
 
Applications  
● Load
 
Switch  
-CHANNEL MOSFET  
P
● Power
 
Management  
MARKING  
Other marks: “
R1
” or
 
“
A19T
”  
MAXIMUM RATINGS (T
a
=25°C unless otherwise noted)  
Symbol  
Parameter  
Drain-Source Voltage  
Max.  
Units  
V

DSS  

V

GSS  

-30  
±12  
V
V
Gate-Source Voltage  
-4.2  
A
T

a

= 25
℃
 
I

D  

Continuous Drain Current  
-2.7  
A
T

a

= 100
℃  
-30  
I

DM  

P

D  

Pulsed Drain Current

note1  

Power Dissipation  
A
1.5  
W
℃
/W  
℃
T

a

= 25
℃  
83  
R

θJA  

Thermal Resistance, Junction to Ambient  
-55 to +150  
T

J

, T

STG

Operating and Storage
T
e
mperature Range  
1/5  

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KY
3401  
MOSFET ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified  
Test Condition  
Symbol  
Parameter  
Min. Typ. Max. Units  
Off Characteristic  
V

(BR)DSS

Drain-Source Breakdown Voltage
 
V

GS

=0V, I

D

= -250μA  
-30  
–
–
–
–
V
I

DSS  

I

GSS  

Zero Gate Voltage Drain Current  
Gate to Body Leakage Current  
V

DS

= -30V, V

GS

= 0V  
V

DS

=0V, V

GS

= ±12V  
–
–
-1  
μA  
nA  
±100  
On Characteristics  
V

GS(th)  

-0.9  
45  
V
Gate Threshold Voltage  
V

DS

= V

GS

, I

D

=-250μA -0.6  
-1.3  
55  
V

GS

=-10V, I

D

=-4A  
V

GS

=-4.5V, I

D

=-3A  
V

GS

=-2.5V, I

D

=-1A  
–
–
–
Static Drain-Source  
R

DS(on)  

53  
68  
mΩ  
note2  
on-Resistance  
72  
96  
Dynamic Characteristics  
C

iss  

C

oss  

C

rss  

Q

g  

Input Capacitance  
–
–
–
–
–
–
880  
105  
65  
–
–
–
–
–
–
pF  
pF  
pF  
nC  
nC  
nC  
V

DS

= -15V, V

GS

= 0V  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
T
o
tal Gate Charge  
8.5  
1.8  
2.7  
V

DS

= -15V, I

D

= -4.2A  
V

GS

= -10V  
Gate-Source Charge  
Gate-Drain(“Miller”) Charge  
Q

gs  

Q

gd  

Switching Characteristics  
t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-on Delay Time  
Turn-on Rise Time  
Turn-off Delay Time  
Turn-off Fall Time  
–
–
–
–
7
3
–
–
–
–
ns  
ns  
ns  
ns  
V

DD

= -15V, I

D

= -1A,  
V

GS

=-10V,R

GEN

=2.5Ω  
20  
12  
Drain-Source Diode Characteristics and Maximum Ratings  
Maximum Continuous Drain to Source Diode  
I

S  

–
–
–
–
–
-4.2  
-30  
A
A
V
Forward Current  
I

SM  

Maximum Pulsed Drain to Source Diode Forward Current  
Drain to Source Diode  
V

GS

= 0V, I

S

= -4.2A  
Forward Voltage  
-1.2  
V

SD  

-0.8  
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction
T
e
mperature  
2. Pulse
T
e
st: Pulse Width≤300μs, Duty Cycle≤2%  
2/5  

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KY
3401  
TYPICAL PERFORMANCE CHARACTERISTICS  
Figure 2:
Typical Transfer Characteristics  
Figure1:
Output Characteristics  
-I
D
(A)  
-I
D
(A)  
25  
20  
15  
10  
5
25  
V
GS
=10 thru 6V  
4.5V  
T
A
=-55
℃
 
25
℃  
20  
15  
10  
5
125
℃  
2.5V  
1.5V  
-V
GS
(V)  
1.5  
-V
DS
(V)  
0
0
0
0
.5  
2
4
6
8
10  
1.0  
2.0  
2.5  
Figure 3:
On-resistance vs. Drain Current  
Figure 4
: Body Diode Characteristics  
-I
S
(A)  
R
DS(ON)
(mΩ)  
10  
100  
80  
V
GS
=-2.5V  
V
GS
=-4.5V  
T
J
=150
℃  
T
J
=-25
℃  
60  
T
J
=-50
℃  
1
40  
20  
0
V
GS
=-10V  
-I
D
(A)  
V
SD
(V)  
0.6 0.8  
0.1  
0.0  
0.2  
0.4  
1.0  
1.2  
1.4  
0
1
2
3
4
5
Figure 5:
Gate Charge Characteristics  
Figure 6:
Capacitance Characteristics  
-V
GS
(V)  
C(pF)  
10  
8
V
DS
=-15V  
I
D
=-4.2A  
C
iss  
10

3  

6
C
oss  
C
rss  
4
2
0
10

2  

10

1  

-V
DS
(V)  
15  
Q
g
(nC)  
0
2
4
6
8
10  
0
5
10  
20  
25  
30  
3/5  

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KY
3401  
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)  
Figure 7:
Normalized Breakdown Voltage vs.  
Junction Temperature  
Figure 8:
Normalized on Resistance vs.  
Junction Temperature  
V
BR(DSS)
(V)  
1.3  
R
DS
(on)(mΩ)  
2.5  
1.2  
1.1  
1.0  
2.0  
1.5  
1.0  
0.5  
0.9  
0
Tj (
℃
)  
Tj (
℃
)  
-100  
-50  
0
50  
100  
150  
200  
-100  
-50  
0
50  
100  
150  
200  
Figure 9:
Maximum Safe Operating Area  
Figure 10:
Maximum Continuous Drain Current  
vs. Case Temperature  
-I
D
(A
)
 
-I
D
(A
)  
5
100  
10  
4
3
2
1
10μs  
100μs  
Limited by R
DS(on)  
1
1ms  
DC  
T
C
=25
℃  
Single pulse  
T
A
(
℃
)  
-V
DS
(V)  
10  
0.1  
0.1  
0
1
100  
0
25  
50  
75  
100  
125  
150  
Figure.11:
Maximum Effective Transient  
Thermal Impedance, Junction-to-Ambient  
Zth
J-A
(
℃
/W)  
10

2  

10

1  

10

0  

D=0.5  
D=0.2  
t1  
D=0.1  
t2  
D=0.05  
D=0.02  
D=0.01  
10

-1  

10

-2  

Notes:  
Single pulse
 
1.Duty factor D=t1/t2  
2.Peak T
J
=P
DM
*Z
thJA
+T
A  
T
P
(s)  
10

-1  

10

-4  

10

-3  

10

-2  

10

0  

10

1  

10

2  

4/5  

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nic Co.,Ltd  
KY
3401  
SOT-23
PACKAGE OUTLINE DRAWING  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
Min  
Max  
Min  
Max  
A
A1  
A2  
b
0.900  
0.000  
0.900  
0.300  
0.080  
2.800  
1.200  
2.250  
1.150  
0.100  
1.050  
0.500  
0.150  
3.000  
1.400  
2.550  
0.035  
0.000  
0.035  
0.012  
0.003  
0.110  
0.047  
0.089  
0.045  
0.004  
0.041  
0.020  
0.006  
0.118  
0.055  
0.100  
c
D
E
E1  
e
0.950 TYP  
0.550 REF  
0.037 TYP  
0.022 REF  
e1  
L
1.800  
2.000  
0.071  
0.079  
L1  
θ
0.300  
0°  
0.500  
8°  
0.012  
0°  
0.020  
8°  
5/5