KY-KY3404
| Part # | KY-KY3404 |
| Download | KY-KY3404 |
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S enZhen
Han
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K ng
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E e
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r
nic Co.,Ltd
3404
KY
3
0
V N-Channel Mosfet
SOT-23
FEATURES
●
R
DS(ON)
≤ 25mΩ (18mΩ
Typ.)
@V
GS
=10V
●
R
DS(ON)
≤ 40mΩ (28mΩ
Typ.)
@V
GS
=4.5V
1.
GATE
2.
SOURCE
3.
DRAIN
APPLICATIONS
●
PWM Applications
●
Load Switch
●
Power Management
-CHANNEL MOSFET
N
MARKING
3404:Device Code
MAXIMUM RATINGS (T
a
=25°C unless otherwise noted)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
V
DSS
V
GSS
30
V
V
Gate-Source Voltage
±20
5.8
T
a
= 25
℃
I
D
Continuous Drain Current
A
4
T
a
= 100
℃
Pulsed Drain Current
note1
Power Dissipation
30
1.5
A
W
I
DM
P
D
T
a
= 25
℃
R
θ
JA
Thermal Resistance, Junction to Ambient
85
℃
/W
℃
T
J
, T
STG
Operating and Storage
T
e
mperature Range
-55 to +150
1/5
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3404
KY
MOSFET ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristic
V
(BR)DSS
Drain-Source Breakdown Voltage
V
GS
= 0V,I
D
= 250μA
30
–
–
–
1
V
V
DS
=
30
V,
–
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
nA
V
GS
= 0
V
, T
J
= 25
℃
V
GS
= ±20V
,V
DS
= 0V
–
–
±100
On Characteristics
2.5
25
1.0
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
V
DS
=V
GS
,I
D
= 250μA
V
1.5
18
V
GS
=10V, I
D
=
5
A
–
Static Drain-Source
On-Resistance
note
2
mΩ
–
28
40
V
GS
=4.5V, I
D
=
4
A
Forward Transconductance
3
V
DS
=5V, I
D
=5A
5.8
–
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
5
60
125
90
7
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=
15
V, V
GS
= 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer
Capa
citance
T
o
tal Gate Charge
V
DS
=
10
V, I
D
=
3.6
A,
V
GS
=
5
V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
1
.5
3
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
–
–
–
–
10
4
–
–
–
–
ns
ns
ns
ns
V
GS
=
10
V, V
DS
=
15
V,
R
G
=2
.5
Ω, I
D
=
5.5
A
27
5
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
–
–
–
I
S
–
–
–
5.8
30
A
A
V
Current
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
Voltage
V
GS
= 0
V
,
I
SD
=
1.7
A,
T
J
= 25
℃
V
SD
1.
2
Notes: 1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2 .
Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤
2
%
2/5
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3404
KY
TYPICAL PERFORMANCE CHARACTERISTICS
Power Capability
Current Capability
6.0
5
.
5
5.0
4
.
5
4.0
3
.
5
3
.
0
2
.
5
2.0
0.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
T
A
=25
o
C
T
A
=25
o
C,V
G
=10V
20 40 60 80
100 120 140 160
0.0
0
0
20 40 60 80
100 120 140 160
T
mp
– Mounting Point Temp.
(°C)
T
mp
– Mounting Point Temp.
(°C)
Safe Operation Area
Transient Thermal Impedance
30
2
1
Duty =
0.5
10
0.2
0.1
100us
300us
1ms
0.1
0.05
0.02
0.01
1
10ms
0.01
0.1
0.01
100ms
Single Pulse
1s
Mounted on 1in
2
pad
DC
T
A
=25
o
C
R
θ
JA
: 150
o
C/W
1E-3
0.01
0.1
1
10
100 300
1E-4 1E-3 0.01
0.1
1 10
30
V
DS
– Drain-Source Voltage (V)
Square Wave Pulse Duration (sec)
3/5
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3404
KY
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
Output Characteristics
On Resistance
30
25
20
15
10
5
50
45
40
35
30
25
20
15
V
GS
= 3,4,5, 6, 7, 8, 9, 10V
V
GS
=4.5V
2V
1V
V
GS
=10V
15
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
20
V
DS
– Drain-Source Voltage (V)
I
D
– Drain Current (A)
Transfer Characteristics
Normalized Threshold Voltage
80
1.8
I
DS
=
5.8
A
I
DS
=250
μ
A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
70
60
50
40
30
20
10
0
1
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150
V
GS
– Gate-Source Voltage (V)
T
j
– Junction Temperature (°C)
4/5
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3404
KY
SOT-23
PACKAGE OUTLINE DRAWING
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min
Max
Min
Max
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
c
D
E
E1
e
0.950 TYP
0.550 REF
0.037 TYP
0.022 REF
e1
L
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
5/5
