KY-KY3404

Part #KY-KY3404
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KY-KY3404
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nic Co.,Ltd  
3404  
KY  
3
0
V N-Channel Mosfet  
SOT-23  
FEATURES  
●
R

DS(ON)

≤ 25mΩ (18mΩ
 
Typ.)  
@V

GS

=10V  
●
R

DS(ON)

≤ 40mΩ (28mΩ
 
Typ.)  
@V

GS

=4.5V  
1.
GATE  
2.
SOURCE  
3.
DRAIN  
APPLICATIONS  
●
PWM Applications  
●
Load Switch  
●
Power Management  
-CHANNEL MOSFET  
N
MARKING  
3404:Device Code  
MAXIMUM RATINGS (T
a
=25°C unless otherwise noted)  
Symbol  
Parameter  
Drain-Source Voltage  
Max.  
Units  
V

DSS  

V

GSS  

30  
V
V
Gate-Source Voltage  
±20  
5.8  
T

a

= 25
℃
 
I

D  

Continuous Drain Current  
A
4
T

a

= 100
℃  
Pulsed Drain Current

note1  

Power Dissipation  
30  
1.5  
A
W
I

DM  

P

D  

T

a

= 25
℃  
R

θ
JA  

Thermal Resistance, Junction to Ambient  
85  
℃
/W  
℃
T

J

, T

STG

Operating and Storage
T
e
mperature Range  
-55 to +150  
1/5  

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nic Co.,Ltd  
3404  
KY  
MOSFET ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified  
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
Off Characteristic  
V

(BR)DSS

Drain-Source Breakdown Voltage
 
V

GS

= 0V,I

D

= 250μA  
30  
–
–
–
1
V
V

DS

=
30
V,  
–
I

DSS  

I

GSS  

Zero Gate Voltage Drain Current  
Gate to Body Leakage Current  
μA  
nA  
V

GS

= 0
V
, T

J

= 25
℃  
V

GS

= ±20V
,V

DS

= 0V  
–
–
±100  
On Characteristics  
2.5  
25  
1.0  
V

GS(th)  

R

DS(on)  

g

FS  

Gate Threshold Voltage  
V

DS

=V

GS

,I

D

= 250μA  
V
1.5  
18  
V

GS

=10V, I

D

=
5
A  
–
Static Drain-Source  
On-Resistance

note
2  

mΩ  
–
28  
40  
V

GS

=4.5V, I

D

=
4
A  
Forward Transconductance  
3
V

DS

=5V, I

D

=5A  
5.8  
–
S
Dynamic Characteristics  
C

iss  

C

oss  

C

rss  

Q

g  

Input Capacitance  
–
–
–
–
–
–
5
60  
125  
90  
7
–
–
–
–
–
–
pF  
pF  
pF  
nC  
nC  
nC  
V

DS

=
15
V, V

GS

= 0V,  
Output Capacitance  
f = 1.0MHz  
Reverse Transfer
Capa
citance  
T
o
tal Gate Charge  
V

DS

=
10
V, I

D

=
3.6
A,  
V

GS

=
5
V  
Q

gs  

Q

gd  

Gate-Source Charge  
Gate-Drain(“Miller”) Charge  
1
.5  
3
Switching Characteristics  
t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
–
–
–
–
10  
4
–
–
–
–
ns  
ns  
ns  
ns  
V

GS

=
10
V, V

DS

=
15
V,  
R

G

=2
.5
Ω, I

D

=
5.5
A  
27  
5
Drain-Source Diode Characteristics and Maximum Ratings  
Maximum Continuous Drain to Source Diode Forward  
–
–
–
I

S  

–
–
–
5.8  
30  
A
A
V
Current  
I

SM  

Maximum Pulsed Drain to Source Diode Forward Current  
Drain to Source Diode Forward  
Voltage  
V

GS

= 0
V
,
I

SD

=
1.7
A,  
T

J

= 25
℃  
V

SD  

1.
2  
Notes: 1.
 
Repetitive Rating: Pulse width limited by maximum junction temperature  
2 .
 
Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤
2
%  
2/5  

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3404  
KY  
TYPICAL PERFORMANCE CHARACTERISTICS  
Power Capability  
Current Capability  
6.0  
5
.
5  
5.0  
4
.
5  
4.0  
3
.
5  
3
.
0  
2
.
5  
2.0  
0.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
T

A

=25

o

C  
T

A

=25

o

C,V

G

=10V  
20 40 60 80
 
100 120 140 160  
0.0  
0
0
20 40 60 80
 
100 120 140 160  
T

mp

– Mounting Point Temp.
 
(°C)  
T

mp

– Mounting Point Temp.
 
(°C)  
Safe Operation Area  
Transient Thermal Impedance  
30  
2
1
Duty =
 
0.5  
10  
0.2  
0.1  
100us  
300us  
1ms  
0.1  
0.05  
0.02  
0.01  
1
10ms  
0.01  
0.1  
0.01  
100ms  
Single Pulse  
1s  
Mounted on 1in

2

pad  
DC  
T

A

=25

o

C  
R

θ
JA

: 150

o

C/W  
1E-3  
0.01  
0.1  
1
10  
100 300  
1E-4 1E-3 0.01  
0.1  
1 10
 
30  
V

DS

– Drain-Source Voltage (V)  
Square Wave Pulse Duration (sec)  
3/5  

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nic Co.,Ltd  
3404  
KY  
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)  
Output Characteristics  
On Resistance  
30  
25  
20  
15  
10  
5
50  
45  
40  
35  
30  
25  
20  
15  
V

GS

= 3,4,5, 6, 7, 8, 9, 10V  
V

GS

=4.5V  
2V  
1V  
V

GS

=10V  
15  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0
5
10  
20  
V

DS

– Drain-Source Voltage (V)  
I

D

– Drain Current (A)  
Transfer Characteristics  
Normalized Threshold Voltage  
80  
1.8  
I

DS

=
5.8
A  
I

DS

=250
μ
A  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
70  
60  
50  
40  
30  
20  
10  
0
1
2
3
4
5
6
7
8
9
10  
-50 -25  
0
25 50 75
 
100 125 150  
V

GS

– Gate-Source Voltage (V)  
T

j

– Junction Temperature (°C)  
4/5  

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nic Co.,Ltd  
3404  
KY  
SOT-23
PACKAGE OUTLINE DRAWING  
Dimensions In Millimeters  
Symbol  
Dimensions In Inches  
Min  
Max  
Min  
Max  
A
A1  
A2  
b
0.900  
0.000  
0.900  
0.300  
0.080  
2.800  
1.200  
2.250  
1.150  
0.100  
1.050  
0.500  
0.150  
3.000  
1.400  
2.550  
0.035  
0.000  
0.035  
0.012  
0.003  
0.110  
0.047  
0.089  
0.045  
0.004  
0.041  
0.020  
0.006  
0.118  
0.055  
0.100  
c
D
E
E1  
e
0.950 TYP  
0.550 REF  
0.037 TYP  
0.022 REF  
e1  
L
1.800  
2.000  
0.071  
0.079  
L1  
θ
0.300  
0°  
0.500  
8°  
0.012  
0°  
0.020  
8°  
5/5