KY-KY4953C

Part #	KY-KY4953C
Download	KY-KY4953C

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C

4953

KY

-3

0V

Dual

P-Channel Mosfet

SOP-8

FEATURES

● R

DS(ON)

≤

87

mΩ( 66mΩ

Typ.)

@V

GS

=

–

10V

● R

DS(ON)

≤

130

mΩ( 100mΩ

Typ.)

@V

GS

=

–

4.5V

APPLICATIONS

●

PWM Applications

●

Load Switch

●

Power Management

3: S

2

4: G

2

5: D

2

6: D

2

7: D

1

8: D

1

1: S

1

2:

G1

MARKING

D1 D1 D2 D2

-CHANNEL MOSFET

P

7

5

8

6

4953.

X

Y

2

3

4

1

S1 G1

S2 G2

X

Y

：

DC Code

MAXIMUM RATINGS T

a

=25

℃

unless otherwise specified

Parameter

Symbol

Rating

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V

V

A

V

DSS

V

GSS

-30

±

2

0

–

3.8

-1

2

2

.0

I

D

I

DM

P

D

note1

Pulsed Drain Current

Power Dissipation

A

W

Junction-to-Ambient

Junction Temperature

R

θJA

62.5

℃

/W

℃

150

T

J

Tstg

Operating Junction and Storage Temperature Range

℃

–55 to 150

1／5

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4953

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ELECTRICAL CHARACTERISTICS Ta= 25

℃

unless otherwise specified

Param

eter

Test Condition

Units

Symbol

Min.

Typ. Max.

OFF Characteristics

–

3

0

—

—

—

—

V

µA

nA

Drain to Source Breakdown Voltage

V

GS

=0V, I

D

=-250µA

V

DSS

I

DSS

I

GSS

Drain to Source Leakage Current

Gate to Source Forward Leakage

V

DS

=-

3

0V,V

GS

=0V

-1

—

—

±10

0

V

GS

=±20V,V

DS

=0V

ON Characteristics

V

GS(th)

-1

—

-1.

8

66

-2

87

V

Gate Threshold Voltage

V

DS

=V

GS

,I

D

=-250µA

V

G

S

=-10V, I

D

=-

3

A

V

G

S

=-4.5V, I

D

=-

2

A

mΩ

mΩ

Drain-to-Source On-

Resistance

note2

R

DS(on)

100

130

—

Dynamic Characteristics

note3

Input Capacitance

—

—

—

—

—

—

320

50

—

—

—

—

—

—

C

iss

C

oss

C

rss

Q

g

V

GS

=0V

,V

DS

=-

15

V

f = 1.0MHz

Output Capacitance

pF

nC

Reverse Transfer Capacitance

Total Gate Charge

35

9.0

1.

5

2.0

I

D

=-

3

A

,V

DS

=-

15

V

V

GS

=-10V

Gate to Source Charge

Gate to Drain (“Mille

r

”

) Charge

Q

gs

Q

gd

Switching Characteristics

note3

Turn-on Delay Time

Rise Time

—

—

—

—

5

1

1

1

2

7

—

—

—

—

t

d(

on

)

t

r

I

D

=-

1

A

,V

DS

=-

15

V

V

GS

=

–

10V,R

G

=

6

Ω

ns

V

t

d(

o

ff

)

Turn-Off Delay Time

Fall Time

t

f

Source-Drain Diode Characteristics

I

S

=-3A,V

GS

=0V

T

J

=25

℃

-1.2

—

—

Diode Forward Voltage

V

SD

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2 . Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

3 . Guaranteed by design, not subject to production testing

2／5

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C

4953

KY

TYPICAL PERFORMANCE CHARACTERISTICS

Figure1. Output

Characteristics

Figure2. Transfer

Characteristics

Figure3. Rdson-Drain

Current

Figure4. Typical

Source-Drain Diode Forward

Voltage

Figure6. Gate

Charge

Figure5. Capacitance

Characteristics

3／5

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4953

KY

TYPICAL PERFORMANCE CHARACTERISTICS

（

cont.

）

Figure8. Normalized

on Resistance vs.

Temperature

Figure7. Normalized

Breakdown Voltage vs.

Temperature

Figure10. Drain

Current vs.

Ambient

Temperature

Figure9. Safe

Operation Area

Figure11. Transient

Thermal Response Curve

4／5

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4953

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SOP-8 PACKAGE OUTLINE DRAWING

Dimensions In Millimeters

Symbol

Dimensions In Inches

Min.

1.350

0.100

1.350

0.330

0.170

4.700

3.800

5.800

Max.

1.750

0.250

1.550

0.510

0.250

5.100

4.000

6.200

Min.

0.0

53

0.004

0.063

0.013

0.006

0.185

0.150

0.228

Max.

0.069

0.010

0.061

0.020

0.010

0.200

0.157

0.244

A

A1

A2

b

c

D

E

1

E

e

1.27(BSC)

0.050(BSC)

L

0.400

0°

1.270

8°

0.016

0°

0.050

8°

θ

5／5