KY-KY6800

Part #	KY-KY6800
Download	KY-KY6800

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6800

KY

3

0V

Dual

N-Channel Mosfet

SOT-23-6L

FEATURES

● R

DS(ON)

≤

39

mΩ(

30

mΩ

Typ.)

@V

GS

=

10

V

●

R

DS(ON)

≤

52

mΩ(

40

mΩ

Typ.)

@V

GS

=

4.5

V

APPLICATIONS

●

Load Switch

3:

G

2

4:

D2

5:

S1

6: D

1

1:

G1

2:

S2

● Battery

Management

MARKING

-CHANNEL MOSFET

N

6800:Device Code

MAXIMUM RATINGS (Ta=25°C unless otherwise noted)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

3

0

±

20

V

DSS

V

GSS

I

D

V

V

A

A

Gate-Source Voltage

3.6

Continuous Drain Current

Pulsed Drain Current

note

1

Total

Power Dissipation

15

I

DM

0.83

P

tot

W

℃

/W

℃

1

50

R

θJA

T

J

Thermal Resistance, Junction to Ambient

Junction

T

e

mperature

150

℃

T

STG

Storage

T

e

mperature Range

-55 to +150

1／4

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6800

KY

MOSFET ELECTRICAL CHARACTERISTICS T

a

=25 °C unless otherwise specified

Typ.

Symbol

Parameter

Test Condition

Min.

Max.

Units

Off Characteristic

V

(BR)DSS

Drain-Source Breakdown Voltage

V

GS

= 0V,I

D

= 250μA

3

0

–

–

–

–

–

V

V

DS

=

3

0V, V

GS

= 0V

V

GS

= ±

20

V,V

DS

= 0V

I

DSS

Zero Gate Voltage Drain Current

Gate to Body Leakage Current

μA

nA

1

–

±100

I

GSS

On Characteristics

V

GS(th)

Gate Threshold Voltage

1.0

V

DS

=V

GS

,I

D

= 250μA

V

GS

=

10

V, I

D

=

3.6

A

1.5

30

2.2

39

V

–

–

Gate Drain-Source

mΩ

R

DS(ON)

note2

On-State Resistance

V

GS

=

4

.5V, I

D

=3A

52

40

Dynamic Characteristics

note3

C

iss

C

oss

C

rss

Q

g

Input Capacitance

Output Capacitance

–

–

–

–

–

–

230

40

–

–

–

–

–

–

pF

pF

pF

nC

nC

nC

V

DS

=1

5

V, V

GS

= 0V,

f = 1.0MHz

Reverse Transfer Capacitance

T

o

tal Gate Charge

17

5.0

1.0

V

DS

=1

5

V, I

D

=

3.

6A,

V

GS

=

10

V

Q

gs

Q

gd

Gate-Source Charge

1.3

Gate-Drain(“Miller”) Charge

Switching Characteristics

note3

10

50

10

20

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

–

–

–

–

–

–

–

–

ns

ns

ns

ns

V

GS

=

4.5

V,

V

DS

=10V, R

G

=

6

Ω,

I

D

=3

.6

A

Drain-Source Diode Characteristics and Maximum Ratings

Drain to Source Diode Forward

Voltage

V

GS

= 0

V

,

I

SD

=3

.6

A,

T

J

= 25

℃

–

–

V

SD

1.

2

V

7.5

2.5

t

rr

Reverse Recovery Time

Reverse Recovery Charge

–

–

–

–

ns

V

GS

= 0

V

,

I

S

=

3.6

A,

di/dt =100A/μs

Q

rr

nC

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2

.

Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤

2

%

3

. Guaranteed by design, not subject to production testing

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6800

KY

Typical Performance Characteristics

Figure1:Switching Test Circuit

Figure2:Switching Waveforms

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6800

KY

SOT-23-6L

PACKAGE OUTLINE DRAWING

Dimensions In Millimeters

Symbol

Dimensions In Inches

Min

Max

1.250

0.100

Min

Max

0.049

0.004

A

1.050

0.000

0.041

0.000

A1

A2

b

1.050

0.300

0.100

2.820

1.500

2.650

1.150

0.

5

00

0.200

3.020

1.700

2.950

0.041

0.012

0.004

0.111

0.059

0.104

0.045

0.020

0.008

0.119

0.067

0.116

c

D

E

E1

e

0.950

T

YP.

0.037 TY

P

.

e1

L

1.800

0.300

0°

2.000

0.600

8°

0.071

0.012

0°

0.079

0.024

8°

θ

4／4