KY-MCR100-6

Mcr100 S

 

e r

i

e s  

0.8A S CRs  

S e

n

s

i

t

i

v

e

 

Ga te

 

S CRs  

ShenZhenHanKingyuan  

Electronic CO.,Ltd  

S

C

Rs  

Mcr100 S

 

e r

i

e s  

ShenZhenHanKingyuan  

Electronic CO.,Ltd  

01.  

S e

n

s

i

t

i

v

e

 

Ga te

 

S CR  

1

2

3

1

3

2

SOT-89  

TO-92  

2

1

2

3

1

3

SOT-89-2L  

SOT-223  

2

2

1

1

3

3

SOT-23-3L  

SOT-23  

FEATURES  

IT(RMS):0.8A  

VGT: 0.8V  

VDRM VRRM:600Vand800V  

APPLICATIONS  

Washing machine,vacuums, massager,solid state relay

，

AC Motor speed regulation and so on.  

PAGE.01/06  

S

C

Rs  

Mcr100 S

 

e r

i

e s  

ShenZhenHanKingyuan  

Electronic CO.,Ltd  

02.  

S e

n

s

i

t

i

v

e

 

Ga te

 

S CR  

Absolute Maximum Ratings

(Tj=25°C unless otherwise specifed)  

Symbol Parameter  

Conditions  

Ratings  

Unit  

MCR100-6  

MCR100-8  

VDRM  

Repetitive Peak Off-State Voltage  

600/800  

V

A

VRRM  

IT(AV)  

Average On-State Current  

0.7  

0.8  

11  

IT(RMS) R.M.S

 

On-State Current  

A

ITSM  

I²t  

Surge On-State Current  

I²t for fusing  

F=50Hz Tp=10ms  

Tp=10ms  

A

0.45  

0.1  

0.5  

A²s  

W

W

°C  

°C  

PG(AV)  

PGM  

Tj  

Average Gate Power Dissipation  

Peak Gate Power Dissipation  

Operating Junction Temperature  

Storage Temperature  

Tj=125°C  

tp=20us Tj=125°C  

40~125  

40~150  

～

～

TSTG  

Electrical Characteristics

 

(Tj=25°C unless otherwise specifed)  

Symbol Parameter  

Test Conditions  

Value  

Unit  

Tc=25°C  

Tc=110°C  

Tc=25°C  

Tc=110°C  

≤5  

≤100  

≤5  

uA  

uA  

uA  

uA  

IDRM  

IRRM  

Repetitive Peak Off-State Current  

Repetitive Peak Reverse Current  

≤100  

VTM  

VGD  

Forward “on” voltage  

IT=1.2A tp=380us  

≤1.7  

≥0.1  

V

V

VD=VDRM,  

Tj=110°C,RGK=1kΩ,RL=3.3KΩ  

Gate non-trigger voltage  

VGT  

IH  

Gate trigger voltage  

Holding current  

VD=12V ,IT=0.1A  

IT=50mA  

≤0.8  

≤4  

V

mA  

mA  

uA  

IL  

Latching current  

Gate trigger current  

IG=1.2 IGT  

≤6  

IGT  

VD=12V ,IT=0.1A  

≤200  

Critical-rate of rise of commutation  

voltage  

TJ=110°C ,VD=2/3VDRM ,RGK=1K  

Ω

dv/dt  

≥10  

V/us  

THERMAL RESISTANCES  

Symbol  

Parameter  

Value  

Unit  

TO

–

9

2/ SO

T

–

2

3/

SOT-23-3L  

SOT-89 SOT-89-2L  

75  

45  

31  

R

th(j-c)  

junction to case  

℃

/W  

SOT-223  

PAGE.02/06  

S

C

Rs  

Mcr100 S

 

e r

i

e s  

ShenZhenHanKingyuan  

Electronic CO.,Ltd  

03.  

S e

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s

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i

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Ga te

 

S CR  

FIG1  

FIG2  

RMS on-state current versus case  

temperature  

Maximum power dissipation versus RMS  

on-state current  

I

T(RMS)  

1.2  

P(w)  

1.2  

α=180

°  

1.0  

1.0  

SOT-223  

0.8  

0.6  

0.4  

0.2  

0.8  

0.6  

SOT-89/SOT-89-2L  

TO-92/  

SOT-23  

0.4  

0.2  

0

SOT-23-3L  

I

T(RMS)

(A)  

Tc (

℃

)  

0

0

0.2  

0.4  

0.6  

0.8  

1.0  

0

25  

50  

75  

100  

125  

FIG3  

FIG4  

Surge peak on-state current versus  

number of cycles  

On-state characteristics (maximum  

values)  

I

TM

(A)  

8

I

TSM

(A)  

tp=10ms  

One cycle  

8

Tj=Tjmax  

6

4

1

2

0

Tj=25

℃

 

V

TM

(V)  

Number of cycles  

100  

0.1  

0

1

2

3

4

5

1

10  

1000  

FIG5  

FIG6  

FIG.6:

Relative variations of gate trigger current,  

holding current and latching current versus  

junction temperature  

Non-repetitive surge peak on-state current  

for a sinusoidal pulse with width tp<20ms, and  

corresponging value of I

2

t (dI/dt < 100A/

μ

s)  

2

I

TSM

(A), I

2

t (A s)  

I

GT

,I

H

,I

L

(Tj)/I

GT

,I

H

,I

L

(Tj=25

℃

)  

3.0  

100  

2.5  

2.0  

I

TSM  

10  

I

GT  

I

H

&I

L  

1.5  

1.0  

0.5  

0.0  

1

I

2

t  

Tj(

℃

)  

tp(ms)  

0.1  

0.01  

-40  

0

40  

80  

120  

0.1  

1

10  

PAGE.03/06  

S

C

Rs  

Mcr100 S

 

e r

i

e s  

ShenZhenHanKingyuan  

Electronic CO.,Ltd  

04.  

S e

n

s

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t

i

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Ga te

 

S CR  

PACKAGE MECHANICAL DATA  

N

Dimensions  

Millimeters  

Ref.  

Inches  

Typ.  

Typ.  

Min.  

4.45  

4.32  

3.18  

0.407  

0.60  

–

Max.  

5.20  

5.33  

4.19  

Min.  

0.175  

0.170  

0.125  

Max.  

0.205  

0.210  

0.165  

0.021  

0.031  

–

A

B

C

D

E

F

V

A

0.533 0.016  

0.80  

–

0.024  

1.1  

–

–

0.043  

0.050  

0.091  

–

1.27  

2.30  

–

–

G

H

J

E

–

–

–

–

0.36  

12.70  

2.04  

1.86  

–

0.50  

15.0  

2.66  

2.06  

4.3  

0.014  

0.500  

0.080  

0.073  

–

0.020  

0.591  

0.105  

0.081  

0.169  

K

N

P

V

J

D

G

TO-92  

SOT-89-2L  

PAGE.04/06  

S

C

Rs  

Mcr100 S

 

e r

i

e s  

ShenZhenHanKingyuan  

Electronic CO.,Ltd  

05.  

S e

n

s

i

t

i

v

e

 

Ga te

 

S CR  

PACKAGE MECHANICAL DATA  

SOT-223  

SOT-89  

PAGE.05/06  

S

C

Rs  

Mcr100 S

 

e r

i

e s  

ShenZhenHanKingyuan  

Electronic CO.,Ltd  

06.  

S e

n

s

i

t

i

v

e

 

Ga te

 

S CR  

G

Dimensions  

Ref.  

Millimeters  

Inches  

Typ.  

Typ.  

Min.  

2.65  

Max. Min.  

2.95 0.104  

Max.  

0.116  

A

B

C

D

E

F

2.92  

1.90  

0.115  

0.075  

0.34  

0.25  

0.36 0.013  

0.55 0.010  

0.014  

0.022  

D

1.60  

1.17  

0.15  

0.063  

0.046  

0.006  

C

B

F

G

H

SOT-23-3L  

ShenZhenHanKingyuan  

Electronic CO.,Ltd  

Information furnished is believed to be accurate and reliable.However,Shenzhen�HanKingyuan�  

Electronic assumes no responsibility for the consequences of use of such information nor for any  

infringement of patents or other rights of third parties which may result from its use.Specifications  

mentioned in this publication are subject to change without notice.This publication supersedes and�  

replaces all information previously supplied.�  

The KY logo is a registered trademark of Shenzhen HanKingyuan Electronic。  

�

©

2013 Shenzhen HanKingyuan Electronic –

 

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PAGE.06/06