KY-TYN612
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TYN612 S
e r
i
e s
12A S CRs
S ta nda rd
S CRs
ShenZhenHanKingyuan
Electronic CO.,Ltd
S
C
Rs
TYN612 S
e r
i
e s
S ta nda rd
S CRs
ShenZhenHanKingyuan
Electronic CO.,Ltd
01.
2
1
1
3
2
3
TO-252
TO-220B Non-Insulated
2
2
1
3
Sensitive Gate SCR
1
2
3
TO-251
TO-263
FEATURES
IT(RMS):12A
VGT: 1.5V
VDRM VRRM:600Vand800V
APPLICATIONS
Washing machine,vacuums, massager,solid state relay
，
AC Motor speed regulation and so on.
PAGE.01/06
S
C
Rs
TYN612 S
e r
i
e s
S ta nda rd
S CRs
ShenZhenHanKingyuan
Electronic CO.,Ltd
02.
Absolute Maximum Ratings
(Tj=25°C unless otherwise specifed)
Symbol
Parameter
Conditions
Ratings
Unit
VDRM
VRRM
600/800
Repetitive Peak Off-State Voltage
TYN612
V
TYN812
/
IT(RMS) R.M.S
On-State Current
Tc=105°C
12
7.5
A
A
IT(AV)
ITSM
I²t
On-state average current
Surge On-State Current
I²t for fusing
TC=105°C
Tp=10ms/tp=8.3ms
Tp=10ms
120/132
75
A
A²s
W
W
°C
°C
PGM
PG(AV)
Tj
Peak Gate Power Dissipation
Average Gate Power Dissipation
Operating Junction Temperature
Storage Temperature
Tj=125°C
2
Tj=125°C
0.5
40~125
40~150
～
～
TSTG
Electrical Characteristics
(Tj=25°C unless otherwise specifed)
Symbol
IDRM
Parameter
Test Conditions
Value
Unit
Tc=25°C
Tc=125°C
Tc=25°C
Tc=125°C
≤10
≤1
uA
mA
uA
Repetitive Peak Off-State Current
≤10
≤1
IRRM
Repetitive Peak Reverse Current
mA
VTM
VGT
di/dt
IGT
IL
Forward “on” voltage
Gate trigger voltage
Critical rate of rise of on-state current
Gate trigger current
IT=23A tp=380us
VD=12V ,IT=0.1A
Tj=125°C, IG=2xIGT,
tr≤100ns
VD=12V IT=0.1A
IG=1.2IGT
≤1.7
≤1.0
≥50
≤20
≤40
≤30
V
V
A/us
mA
mA
mA
Latching current
IH
Holding current
IT=0.1A
VD=VDRM
VGD
dv/dt
Gate non-trigger voltage
≥0.25
≥200
V
TJ=125°C,RL=3.3KΩ,RGK=1KΩ
TJ=125°C VD=2/3VDRM Gate
open circuit
Critical-rate of rise of commutation
voltage
V/us
Rth(j-c)
Rth(j-a)
Thermal resistance
Thermal resistance
Junction to case
1
°C/W
°C/W
Junction to ambient
50
PAGE.02/06
S
C
Rs
TYN612 S
e r
i
e s
S ta nda rd
S CRs
ShenZhenHanKingyuan
Electronic CO.,Ltd
03.
FIG1
FIG2
RMS on-state current versus case
temperature
Maximum power dissipation versus RMS
on-state current
P(w)
16
T(RMS)
18
α=180°
16
TO-251/
TO-252
12
TO-220B
(Non-Ins)
12
9
TO-263
8
4
0
6
3
0
I
T(RMS)
(A)
Tc (
℃
)
0
3
6
9
12
15
FIG3
FIG4
Surge peak on-state current versus
number of cycles
On-state characteristics (maximum
values)
I
TM
(A)
I
TSM
(A)
175
100
tp=10ms
One cycle
150
125
100
75
Tj=125
℃
10
50
25
Tj=25
℃
V
TM
(V)
Number of cycles
0
1
0
1
2
3
4
5
1
10
100
1000
FIG5
FIG6
FIG.6:
Relative variations of gate trigger current,
holding current and latching current versus
junction temperature
Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms, and
corresponging value of I
2
t (dI/dt < 100A/
μ
s)
2
I
TSM
(A), I
2
t (A s)
I
GT
,I
H
,I
L
(Tj)/I
GT
,I
H
,I
L
(Tj=25
℃
)
10
3
10
2
10
3.0
2.5
2.0
I
TSM
I
2
t
I
GT
dI/dt
1.5
1.0
0.5
0.0
I
H
&I
L
Tj(
℃
)
40 60
tp(ms)
-40 -20
0
20
80 100 120 140
0.01
0.1
1
10
PAGE.03/06
S
C
Rs
TYN612 S
e r
i
e s
S ta nda rd
S CRs
ShenZhenHanKingyuan
Electronic CO.,Ltd
04.
PACKAGE MECHANICAL DATA
E
B2
A
C2
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
2.20
0.03
0.55
5.10
0.45
2.70
6.00
6.40
4.40
9.35
1.30
1.37
Max.
2.40
0.23
0.65
5.40
0.55
2.90
6.20
6.70
4.70
10.6
1.70
1.50
Min.
0.086
0.001
0.022
0.200
0.018
0.106
0.236
0.252
0.173
0.368
0.051
0.054
Max.
0.095
0.009
0.026
0.213
0.022
0.114
0.244
0.264
0.185
0.417
0.067
0.059
A
A2
B
B2
C
C2
D
C
B
E
G
G
DETAIL A
H
L1
L2
L3
L4
0.8
0.8
4
°
0.031
0.031
4
°
V1
V2
E1
0
°
8
°
0
°
8
°
L2
DETAIL A
TO-252
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.40
0.61
0.46
1.21
2.40
8.60
9.60
6.20
Max.
4.60
0.88
0.70
1.32
2.72
9.70
10.4
6.60
Min.
0.173
0.024
0.018
0.048
0.094
0.339
0.378
0.244
Max.
0.181
0.035
0.028
0.052
0.107
0.382
0.409
0.260
.8mm
3
x
A
E
a
A
B
M
Φ
C2
C
C2
C3
D
E
JIE
F
C3
C
2.54
3.75
0.1
G
L2
28.0
29.8
H
1.102
1.173
0.148
L1
L2
L3
V1
1.14
2.65
1.70
2.95
0.045
0.104
0.067
0.116
B
45
°
45
°
G
TO-220B Non-Ins
PAGE.04/06
S
C
Rs
TYN612 S
e r
i
e s
S ta nda rd
S CRs
ShenZhenHanKingyuan
Electronic CO.,Ltd
05.
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
2.20
0.90
0.55
5.10
0.76
0.45
0.48
6.00
6.40
Max.
2.40
1.20
0.65
5.40
0.85
0.62
0.62
6.20
6.70
Min.
0.086
0.035
0.022
0.200
0.030
0.018
0.019
0.236
0.252
Max.
0.095
0.047
0.026
0.213
0.033
0.024
0.024
0.244
0.264
A
A2
B
E
B2
A
C2
B2
B3
C
C2
D
B3
B
E
2.30
0.091
G
16.0
8.90
1.80
1.37
17.0
9.40
1.90
1.50
H
0.630
0.350
0.071
0.054
0.669
0.370
0.075
0.059
G
C
L
L1
L2
V1
A2
4°
4°
TO-251
TO-263
PAGE.05/06
S
C
Rs
TYN612 S
e r
i
e s
S ta nda rd
S CRs
ShenZhenHanKingyuan
Electronic CO.,Ltd
06.
ShenZhenHanKingyuan
Electronic CO.,Ltd
Information furnished is believed to be accurate and reliable.However,Shenzhen�HanKingyuan�
Electronic assumes no responsibility for the consequences of use of such information nor for any
infringement of patents or other rights of third parties which may result from its use.Specifications
mentioned in this publication are subject to change without notice.This publication supersedes and�
replaces all information previously supplied.�
The KY logo is a registered trademark of Shenzhen HanKingyuan Electronic。
�
©
2013 Shenzhen HanKingyuan Electronic –
Printed in Shenzhen – All Rights Reserved�
PAGE.06/06
