Leading-Energy-LEGM200BH120L2K
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Sep.2020
IGBT Power Module
Features:
Applications:
• V
CE
=1200V I
C
=200A
• The inverter
• Low V
CE(sat)
• Motor control and drives
• V
CEsat
with positive temperature coefficient
• Maximum junction temperature 150
℃
• Isolation Type Package
Internal Circuit
Maximum Rated Values(IGBT Inverter)
Leading Energy Electronic Technology Co.,Ltd
LEGM200BH120L2K: 01
1/7
Sep.2020
Maximum Rated Values(IGBT Inverter)
Symbolc
Parameter
Conditions
Min. Typ. Max. Unit
I
C
=200 A, V
GE
=15 V, T
vj
=25
℃
2.10
2.50
5.8
V
V
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
=200 A, V
GE
=15 V, T
vj
=125
℃
I
C
=5.0 mA,V
CE
=V
GE
,T
vj
= 25
℃
V
CE
=1200 V, V
GE
=0 V, T
vj
=25
℃
V
CE
=0 V, V
GE
=15 V, T
vj
=25
℃
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
Gate Threshold Voltage
V
Collector-Emitter Cut-off Current
Gate-Emitter Leakage Current
Turn-on Delay Time, Inductive Load
Rise Time, Inductive Load
3.0
mA
nA
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
400
49
72
I
C
=200 A,V
CE
=600 V
V
GE
=
±
15 V
t
d(off)
Turn-off Delay Time, Inductive Load
Fall Time, Inductive Load
339
72
R
Gon
=2 Ω
t
f
T
vj
=25
℃
E
on
E
off
t
d(on)
t
r
Turn-on Energy Loss per Pulse
Energy Loss per Pulse
10.4
15
Turn-on Delay Time, Inductive Load
Rise Time, Inductive Load
50
77
I
C
=200 A,V
CE
=600 V
V
GE
=
±
15 V
t
d(off)
Turn-off Delay Time, Inductive Load
Fall Time, Inductive Load
375
262
11.5
21
R
Gon
=2 Ω
t
f
T
vj
=125
℃
E
on
E
off
R
thJC
T
vj op
Turn-on Energy Loss per Pulse
Energy Loss per Pulse
Thermal resistance, junction to case
Temperature under switching conditions
per IGBT
0.13 K/W
℃
-40
125
Leading Energy Electronic Technology Co.,Ltd
LEGM200BH120L2K: 01
2/7
Sep.2020
Maximum Rated Values (Diode Inverter)
Symbol
V
RRM
I
F
Parameter
Repetitive Peak Reverse Voltage
Continuous DC Forward Current
Repetitive Peak Forward Current
I
2
t Value
Conditions
T
vj
= 25
℃
Min. Typ. Max. Unit
1200
200
V
A
T
C
=100
℃
t
P
=1 ms
400
I
FRM
I
2
t
A
A
2
s
V
R
=0 V, t
P
=10 ms, T
vj
=125
℃
7500
Characteristic Values (Diode Inverter)
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
I
F
=200 A, V
CE
=0 V, T
vj
=25
℃
I
F
=200 A, V
CE
=0 V, T
vj
=125
℃
2.15
2.25
120
16.5
9.2
V
V
V
F
Forward Voltage
t
rr
Q
r
Reverse Recovery time
Recovered Charge
ns
I
F
=200 A,V
R
=600 V
-di/dt=3750 A/us
T
vj
=25
℃
uC
mJ
ns
E
rec
t
rr
Reverse Recovery Energy
Reverse Recovery time
Recovered Charge
291
2.75
15.3
I
F
=200 A,V
R
=600 V
-di/dt=3750 A/us
T
vj
=125
℃
Q
r
uC
mJ
K/W
℃
E
rec
Reverse Recovery Energy
R
thJC
Thermal resistance, junction to case
T
vj op
Operating Junction Temperature
per Diode
0.19
-40
125
Module Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
2500
V
isol
Isolation voltage
t=1min,f=50Hz
V
-40
2.5
3.0
125
5.0
6.0
T
stg
M
t
M
s
G
Storage Temperature
Module Electrodes Torque
Module-to-Sink Torque
Weight of Module
℃
N·m
N·m
g
Recommended(M6)
Recommended(M6)
300
Leading Energy Electronic Technology Co.,Ltd
LEGM200BH120L2K: 01
3/7
Sep.2020
Output characteristic of IGBT,Inverter (typical)
I
c
= f (V
CE
Switching time of IGBT,Inverter (typical)
E
on
= f
(I
C
), E
off
= f (I
C
)
)
V
GE
= 15V
V
GE
=
±
15V, R
G
= 2Ω, V
CE
= 600V
Switching losses of IGBT,Inverter (typical)
E
on
= f (R
G
), E
off
= f (R
G
)
RBSOA IGBT,Inverter (typical)
I
C
= f
(V
CE
)
V
GE
=
±
15V, I
C
= 200A, V
CE
= 600V
V
GE
=
±
15V, R
Goff
= 2Ω, T
vj
=125
℃
Leading Energy Electronic Technology Co.,Ltd
LEGM200BH120L2K: 01
4/7
Sep.2020
Forward characteristic of Diode,Inverter (typical)
I
F
= f (V
F
)
Switching losses of Diode, Inverter (typical)
E
rec
= f (R
G
),
I
F
= 200A
,
V
CE
= 600V
Switching losses of Diode, Inverter (typical)
E
rec
= f(I
F
),
R
Gon
= 2Ω
,
V
CE
= 600V
Leading Energy Electronic Technology Co.,Ltd
LEGM200BH120L2K: 01
5/7
Sep.2020
Package Dimensions
(Dimensions in Millimeters)
Leading Energy Electronic Technology Co.,Ltd
LEGM200BH120L2K: 01
6/7
Sep.2020
DISCLAIMER
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE
TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Leading Energy Electronic Technology Co.,Ltd
LEGM200BH120L2K: 01
7/7
