Leading-Energy-LEGM200BH120L2K

Part #Leading-Energy-LEGM200BH120L2K
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Leading-Energy-LEGM200BH120L2K
Sep.2020  
IGBT Power Module  
Features:  
Applications:  
• V

CE

=1200V I

C

=200A  
• The inverter  
• Low V

CE(sat)  

• Motor control and drives  
• V

CEsat

with positive temperature coefficient  
• Maximum junction temperature 150
℃
 
• Isolation Type Package  
Internal Circuit  
Maximum Rated Values(IGBT Inverter)  

Leading Energy Electronic Technology Co.,Ltd  
LEGM200BH120L2K: 01  
1/7  

Sep.2020  
Maximum Rated Values(IGBT Inverter)  
Symbolc  
Parameter  
Conditions  
Min. Typ. Max. Unit  
I

C

=200 A, V

GE

=15 V, T

vj

=25
℃  
2.10  
2.50  
5.8  
V
V
V

CE(sat)

Collector-Emitter Saturation Voltage  
I

C

=200 A, V

GE

=15 V, T

vj

=125
℃  
I

C

=5.0 mA,V

CE

=V

GE

,T

vj

= 25
℃  
V

CE

=1200 V, V

GE

=0 V, T

vj

=25
℃  
V

CE

=0 V, V

GE

=15 V, T

vj

=25
℃  
V

GE(th)  

I

CES  

I

GES  

t

d(on)  

t

r  

Gate Threshold Voltage  
V
Collector-Emitter Cut-off Current  
Gate-Emitter Leakage Current  
Turn-on Delay Time, Inductive Load  
Rise Time, Inductive Load  
3.0  
mA  
nA  
ns  
ns  
ns  
ns  
mJ  
mJ  
ns  
ns  
ns  
ns  
mJ  
mJ  
400  
49  
72  
I

C

=200 A,V

CE

=600 V  
V

GE

=
±
15 V  
t

d(off)  

Turn-off Delay Time, Inductive Load  
Fall Time, Inductive Load  
339  
72  
R

Gon

=2 Ω  
t

f  

T

vj

=25
℃  
E

on  

E

off  

t

d(on)  

t

r  

Turn-on Energy Loss per Pulse  
Energy Loss per Pulse  
10.4  
15  
Turn-on Delay Time, Inductive Load  
Rise Time, Inductive Load  
50  
77  
I

C

=200 A,V

CE

=600 V  
V

GE

=
±
15 V  
t

d(off)  

Turn-off Delay Time, Inductive Load  
Fall Time, Inductive Load  
375  
262  
11.5  
21  
R

Gon

=2 Ω  
t

f  

T

vj

=125
℃  
E

on  

E

off  

R

thJC  

T

vj op  

Turn-on Energy Loss per Pulse  
Energy Loss per Pulse  
Thermal resistance, junction to case  
Temperature under switching conditions  
per IGBT  
0.13 K/W  
℃
-40  
125  
Leading Energy Electronic Technology Co.,Ltd  
LEGM200BH120L2K: 01  
2/7  

Sep.2020  
Maximum Rated Values (Diode Inverter)  
Symbol  
V

RRM  

I

F  

Parameter  
Repetitive Peak Reverse Voltage  
Continuous DC Forward Current  
Repetitive Peak Forward Current  
I

2

t Value  
Conditions  
T

vj

= 25
℃  
Min. Typ. Max. Unit  
1200  
200  
V
A
T

C

=100
℃  
t

P

=1 ms  
400  
I

FRM  

I

2

t  
A
A

2

s  
V

R

=0 V, t

P

=10 ms, T

vj

=125
℃  
7500  
Characteristic Values (Diode Inverter)  
Symbol  
Parameter  
Conditions  
Min. Typ. Max. Unit  
I

F

=200 A, V

CE

=0 V, T

vj

=25
℃  
I

F

=200 A, V

CE

=0 V, T

vj

=125
℃  
2.15  
2.25  
120  
16.5  
9.2  
V
V
V

F  

Forward Voltage  
t

rr  

Q

r  

Reverse Recovery time  
Recovered Charge  
ns  
I

F

=200 A,V

R

=600 V  
-di/dt=3750 A/us  
T

vj

=25
℃  
uC  
mJ  
ns  
E

rec  

t

rr  

Reverse Recovery Energy  
Reverse Recovery time  
Recovered Charge  
291  
2.75  
15.3  
I

F

=200 A,V

R

=600 V  
-di/dt=3750 A/us  
T

vj

=125
℃  
Q

r  

uC  
mJ  
K/W  
℃
E

rec  

Reverse Recovery Energy  
R

thJC

Thermal resistance, junction to case  
T

vj op  

Operating Junction Temperature  
per Diode  
0.19  
-40  
125  
Module Characteristics  
Symbol  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Unit  
2500  
V

isol  

Isolation voltage  
t=1min,f=50Hz  
V
-40  
2.5  
3.0  
125  
5.0  
6.0  
T

stg  

M

t  

M

s  

G
Storage Temperature  
Module Electrodes Torque  
Module-to-Sink Torque  
Weight of Module  
℃
N·m  
N·m  
g
Recommended(M6)  
Recommended(M6)  
300  
Leading Energy Electronic Technology Co.,Ltd  
LEGM200BH120L2K: 01  
3/7  

Sep.2020  
Output characteristic of IGBT,Inverter (typical)  
I

c

= f (V

CE  

Switching time of IGBT,Inverter (typical)  
E

on

= f
 
(I

C

), E

off

= f (I

C

)  
)
V

GE

= 15V  
V

GE

=
±
15V, R

G

= 2Ω, V

CE

= 600V  
Switching losses of IGBT,Inverter (typical)  
E

on

= f (R

G

), E

off

= f (R

G

)  
RBSOA IGBT,Inverter (typical)  
I

C

= f
 
(V

CE  

)
V

GE

=
±
15V, I

C

= 200A, V

CE

= 600V  
V

GE

=
±
15V, R

Goff

= 2Ω, T

vj

=125
℃  
Leading Energy Electronic Technology Co.,Ltd  
LEGM200BH120L2K: 01  
4/7  

Sep.2020  
Forward characteristic of Diode,Inverter (typical)  
I

F

= f (V

F

)  
Switching losses of Diode, Inverter (typical)  
E

rec

= f (R

G

),  
I

F

= 200A
,
V

CE

= 600V  
Switching losses of Diode, Inverter (typical)  
E

rec

= f(I

F

),  
R

Gon

= 2Ω
,
V

CE

= 600V  
Leading Energy Electronic Technology Co.,Ltd  
LEGM200BH120L2K: 01  
5/7  

Sep.2020  
Package Dimensions  
(Dimensions in Millimeters)  
Leading Energy Electronic Technology Co.,Ltd  
LEGM200BH120L2K: 01  
6/7  

Sep.2020  
DISCLAIMER  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE  
TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Leading Energy Electronic Technology Co.,Ltd  
LEGM200BH120L2K: 01  
7/7