Leiditech-2N7002KT
| Part # | Leiditech-2N7002KT |
Download  | Leiditech-2N7002KT |
2N7002KT
SOT-523 Plastic-Encapsulate Mosfets
Features
Gate
1
■ High density cell design for low R
DS (ON)
■ Voltage controlled small signal switch
■ Rugged and reliable
3
Drain
■ High saturation current capability
Source
2
Applications
(
T
o
p View)
■ Load Switch for Portable Devices
■ DC/DC Converter
Marking:
KN
Maximum Ratings (T
a
=25°C unless otherwise specified)
Symbol
V
DS
V
GS
I
D
Parameter
Value
60
Unit
V
Drain-Source voltage
Gate-Source voltage
Drain Current
20
V
115
150
833
150
mA
mW
°C/W
°C
P
D
Power Dissipation
R
θJA
T
J
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
T
STG
-55 to +150
°C
Electrical Characteristics (T
a
=25°C unless otherwise specified)
Symbol
V
(BR)DSS
V
GS(th)
l
GSS
Parameter
Test Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250µA
60
1
V
V
Gate-Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
V
DS
=0 V, V
GS
=±20 V
V
DS
=60 V, V
GS
=0 V
V
GS
=10 V, V
DS
=7 V
2.5
±80
80
Gate-body Leakage current
Zero Gate Voltage Drain Current
On-state Drain Current
nA
nA
mA
I
DSS
I
D(ON)
500
80
V
GS
=10V, I
D
= 500mA
5
7
R
DS(on)
g
fs
Drain-Source On-Resistance
Forward Trans conductance
Drain-source on-voltage
Ω
mS
V
V
GS
=5V, I
D
= 50mA
V
DS
=10V, I
D
=200mA
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=50mA
I
S
=115mA, V
GS
=0 V
V
GS
= 0V
3.75
0.375
1.2
50
V
DS(on)
V
SD
C
iss
C
oss
C
rss
Diode Forward Voltage
Input Capacitance
0.55
V
Output Capacitance
V
DS
= 25V
25
pF
ns
f = 1.0MHz
Reverse Transfer Capacitance
5
V
DD
=25 V, R
L
=50Ω,
I
D
=500mA,V
GEN
=10V,
R
G
=25 Ω
t
d(on)
t
d(off)
Turn-On Time
Turn-Off Time
20
40
Rev
:
01.06.2014
1/3
2N7002KT
SOT-523 PACKAGE OUTLINE & DIMENSIONS
* SOLDERING FOOTPRINT
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
T
e
l :
+86- 021 50828806
Fax : +86- 021 50477059
Rev
:
01.06.2014
3/3
