Leiditech-2N7002W
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2N7002W
1. FEATURES
●
We declare that the material of product
compliance with
RoHS requirements and Halogen Free.
ESD Protected:1000V
●
SC70(SOT-323)
2. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
2N7002W
6C
3000/Tape&Reel
3. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Symbol
VDSS
VDGR
ID
Limits
Unit
Vdc
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Drain Current
60
60
Vdc
mAdc
– Continuous
TC = 25°C
TC = 100°C
±115
±75
– Pulsed (Note 1)
IDM
±800
Gate–Source Voltage
– Continuous
VGS
±20
±40
Vdc
Vdc
– Non–repetitive (tp
≤
50μs)
VGSM
4. THERMAL CHARACTERISTICS
Parameter
Symbol
Limits
Unit
Total Device Dissipation,
FR−5 Board (Note 2) @ TA = 25ºC
Derate above 25ºC
PD
225
mW
1.8
mW/ºC
ºC/W
Thermal Resistance,
RΘJA
556
Junction–to–Ambient(Note 2)
Junction and
Storage temperature
TJ,Tstg
−55
∼
+150
º
C
1. Pulse Test: Pulse Width
≤
300 μs, Duty Cycle
≤
2.0%.
2. FR–5 = 1.0×0.75×0.062 in.
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5. ELECTRICAL CHARACTERISTICS (Ta= 25
ºC
)
OFF CHARACTERISTICS
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Vdc
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10μAdc)
VBRDSS
IDSS
60
–
–
–
–
–
μAdc
μAdc
μAdc
Zero Gate Voltage Drain Current
TJ = 25°C
1.0
500
(VGS = 0, VDS = 60 Vdc)
TJ = 125°C
–
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
IGSSF
IGSSR
–
–
–
–
1.0
Gate–Body Leakage Current, Reverse
(VGS = – 20 Vdc)
-1.0
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Vdc
mA
Vdc
VGS(th)
(VDS = VGS, ID = 250μAdc)
On–State Drain Current
1.0
1.6
–
2.5
–
ID(on)
(VDS
≥
2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
Static Drain–Source On–State Resistance
(VGS = 10 Vdc, ID = 500 mAdc)
TC = 25°C
TC = 125°C
500
VDS(on)
–
–
–
–
3.75
0.375
RDS(on)
Ohms
–
–
–
–
1.4
–
7.5
13.5
7.5
(VGS = 5.0 Vdc, ID = 50 mAdc)
TC = 25°C
TC = 125°C
1.8
–
13.5
Forward Transconductance
mmhos
gfs
(VDS
≥
2.0 VDS(on), ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
80
–
–
pF
pF
pF
Cibo
Cobo
Cibo
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
–
–
–
17
10
50
25
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
2.5
5.0
ns
Turn-On Delay Time
Turn-Off Delay Time
(VDD = 25 Vdc , ID =500
mAdc, RG = 25Ω,RL = 50
Ω,Vgen = 10 V)
td(on)
td(off)
–
–
7
20
40
11
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
Vdc
VSD
(IS = 115 mAdc, VGS = 0 V)
Source Current Continuous (Body Diode)
Source Current Pulsed
–
–
–
–
–
–
-1.5
-115
-800
IS
mAdc
mAdc
ISM
3.Pulse Test: Pulse Width
≤
300 μs, Duty Cycle
≤
2.0%.
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6.
ELRCTRICAL CHARACTERISTICS CURVES
1.6
1.2
1
150
℃
1.2
0.8
0.4
0
25
℃
0.8
0.6
0.4
0.2
0
VGS=4.5V
VGS=4V
VGS=5V
VGS=6V
VGS=7,8,9,10V
-55
℃
VGS=3.5V
VGS=3V
VGS=2.5V
0
1
2
3
4
5
6
0
2
4
6
8
10
VDS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
ON-Region Characteristics
Transfer Characteristcs
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
VGS=10V
VGS=5V
150
℃
85
℃
150
℃
85
℃
25
℃
25
℃
-55
℃
-55
℃
0
0.05
0.1
0.15
0.2
0
0.05
0.1
0.15
0.2
ID, Drain Current(A)
ID, Drain Current(A)
RDS(on) vs.
ID
RDS(on) vs.
ID
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6.
ELRCTRICAL CHARACTERISTICS CURVES
（
Con.)
10
9
8
7
6
5
4
3
2
1
0
2.5
2
VGS=10V
VGS=5V
1.5
1
ID=500mA
ID=200mA
0.5
0
2
4
6
8
10
-50
0
50
100
150
Temperataure(
℃
)
VGS, Gate-to-Source Voltage(V)
RDS(on) vs. Temperature
RDS(on) vs. VGS
35
30
25
20
15
10
5
10
VGS=0V
VGS=0V
1
Ciss
85
℃
25
℃
Coss
Crss
0.1
0.01
0
0
5
10
15
20
25
30
0.4
0.5
0.6
0.7
0.8
0.9
1
VSD, Source-to-Drain Voltage(V)
VDS, Drain-to-Source Voltage(V)
Capacitor vs.VDS
IS vs.VSD
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6.
ELRCTRICAL CHARACTERISTICS CURVES
（
Con.)
1.4
1.2
1
1.0E-06
1.0E-07
1.0E-08
1.0E-09
1.0E-10
ID=250uA
VGS=0
150
℃
0.8
0.6
0.4
0.2
0
125
℃
85
℃
25
℃
-50
0
50
100
150
0
10
20
30
40
50
60
Temperature(
℃）
VDS, Drain-to-Source Voltage(V)
VGS(th) vs. Temperature
IDS vs. VDS
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7.OUTLINE AND DIMENSIONS
Notes:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
DIM MIN NOM MAX
MIN NOM
MAX
0.80 0.90 1.00
0.032 0.035 0.039
A1 0.00
0.05 0.10
0.000 0.002 0.004
A
A2
b
0.70REF
0.028REF
0.30 0.35 0.40
0.012 0.014 0.016
0.10 0.18 0.25
0.004 0.007 0.010
1.80 2.10 2.20
0.071 0.083 0.087
1.15 1.24 1.35
0.045 0.049 0.053
1.20 1.30 1.40
0.047 0.051 0.055
c
D
E
e
e1
L
0.65REF
0.026REF
0.20 0.38 0.56
0.008 0.015 0.022
2.00 2.10 2.40
0.079 0.083 0.095
H
E
8.SOLDERING FOOTPRINT
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
T
e
l :
+86- 021 50828806
Fax : +86- 021 50477059
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