Leiditech-DMN3028LQ
| Part # | Leiditech-DMN3028LQ |
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DMN3028LQ
Description
The DMN3028LQ uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
Dimensions SOT-23
Battery protection or in other Switching application.
General Features
V
DS
= 30V
I
D
=4.2A
R
DS(ON)
< 38mΩ @ V
GS
=10V
Pin Configuration
Application
Lithium battery protection
Wireless impact
●
●
●
Mobile phone fast charging
Package Marking and Ordering Information
Device
Device Marking
Device Package
Reel Size
Tape width
Quantity
DMN3028LQ
3404B
SOT-23
Ø180mm
8 mm
3000 units
unless otherwise noted)
Absolute Maximum Ratings (TC=25
℃
Symbol
VDSS
Parameter
Max.
Units
V
Drain-Source Voltage
Gate-Source Voltage
30
VGSS
±20
V
Continuous Drain Current
4.2
A
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
IDM
Continuous Drain Current
2.6
A
Pulsed Drain Current
16
A
P
D
1
W
Power Dissipation
T
A
= 25
℃
Thermal Resistance, Junction to Ambient
Operating and Storage
T
e
mperature Range
RθJA
125
℃
/W
℃
TJ, TSTG
-55 to +150
Rev
:
01.0
7
.2021
1/
5
DMN3028LQ
Electrical Characteristics (TJ=25
℃
, unless otherwise noted)
Symbol
V(BR)DSS
IDSS
Parameter
Test Condition
V
GS
=0
V
,
I
D
=250μA
V
DS
=30
V
,
V
GS
=0
V
,
V
DS
=0
V
,
V
GS
= ±20V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10
V
,
I
D
=4A
Min.
Typ.
32
–
Max.
–
Units
V
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
30
–
1.0
±100
2.5
38
μA
nA
V
IGSS
–
–
VGS(th)
1.2
1.5
29
45
233
–
–
–
RDS(on)
Static Drain-Source on-Resistance note2
mΩ
V
GS
=4.5
V
,
I
D
=3A
65
C
iss
Input Capacitance
–
pF
V
DS
=15
V
,
V
GS
=0
V
,
f=1.0MHz
Coss
Crss
Q
g
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
–
–
–
44
33
3
–
–
–
pF
pF
nC
V
DS
=15
V
,
I
D
=2A,
V
GS
=10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Turn-on Delay Time
–
–
–
0.5
0.8
4
–
–
–
nC
nC
ns
td(on)
V
DS
=15
V
,
I
D
=4A, R
GEN
=3Ω,
V
GS
=10V
t
r
Turn-on Rise Time
–
–
2.1
15
–
–
ns
ns
td(off)
Turn-off Delay Time
Turn-off Fall Time
t
f
–
–
3.2
–
–
ns
A
IS
Maximum Continuous Drain to Source Diode Forward
Current
Maximum Pulsed Drain to Source Diode Forward Current
4
ISM
–
–
–
–
16
A
V
VSD
Drain to Source Diode Forward
Voltage
V
GS
=0
V
,
I
S
=4A
1.2
Note :
1
、
The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2
、
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3
、
The power dissipation is limited by 150
℃
junction temperature
4
、
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Rev
:
01.0
7
.2021
2/
5
DMN3028LQ
Typical Characteristics
Figure1: Output Characteristics
Figure 2: Typical Transfer Characteristics
Figure 3:On-resistance vs. Drain Current
Figure 4: Body Diode Characteristics
Figure 5: Gate Charge Characteristics
Figure 6: Capacitance Characteristics
Rev
:
01.0
7
.2021
3/
5
DMN3028LQ
Figure 7: Normalized Breakdown Voltage vs.
Junction Temperature
Figure 8: Normalized on Resistance vs
Junction Temperature
Figure 9: Maximum Safe Operating Area
vs. Case Temperature
Figure 10: Maximum Continuous Drain Current
Figure.11: Maximum Effective
Transient Thermal Impedance, Junction-to-Case
Rev
:
01.0
7
.2021
4/
5
DMN3028LQ
Package Mechanical Data:SOT-23
E1
Dimensions in Millimeters
Symbol
MIN.
MAX.
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
c
D
E
E1
e
0.950TYP
0.550REF
e1
L
1.800
2.000
L1
θ
0.300
0°
0.500
8°
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
T
e
l :
+86- 021 50828806
Fax : +86- 021 50477059
Rev
:
01.0
7
.2021
5
/
5
