Leiditech-LM-MMBF170-7-F

LM-MMBF170-7-F  

N-Channel Enhancement Mode Field Effect Transistor  

Product Summary  

●

V

DS  

60V  

●

I

D  

340mA  

●

R

DS(ON)

( at V

GS

=10V)  

●

R

DS(ON)

( at V

GS

=4.5V)  

＜

2.5ohm  

＜

3.0ohm  

General Description  

●

Trench Power MV MOSFET technology  

●

Voltage controlled small signal switch  

●

Low input Capacitance  

●

Fast Switching Speed  

●

Low Input / Output Leakage  

Applications  

●

Battery operated systems  

●

Solid-state relays  

●

Direct logic-level interface

：

TTL/CMOS  

Absolute Maximum Ratings

(T =25

℃

unless otherwise noted)  

■

A

Parameter  

Symbol  

Limit  

60  

Unit  

V

Drain-source Voltage  

Gate-source Voltage  

Drain Current  

V

DS  

V

GS  

±

20  

V

T

A

=25

℃

@ Steady State  

T

A

=70

℃

@ Steady State  

340  

272  

I

D  

mA  

A

Pulsed Drain Current

A  

Total Power Dissipation @ T

A

=25

℃  

I

DM  

1.5  

350  

P

D  

mW  

℃

/

W  

℃

Thermal Resistance Junction-to-Ambient @ Steady State

B  

Junction and Storage Temperature Range  

R

θ

JA  

357  

T

J

,T

STG  

-55

～

+150  

Ordering Information

(Example)  

■

PACKING  

PREFERED P/N  

MINIMUM  

PACKAGE(pcs)  

INNER BOX  

QUANTITY(pcs)  

OUTER CARTON  

QUANTITY(pcs)  

Marking  

DELIVERY MODE  

CODE  

F2  

7002.  

3000  

30000  

120000  

7“

reel  

LM-MMBF170-7-F  

1/5  

Rev

:

03.12.2021  

LM-MMBF170-7-F  

Electrical Characteristics

(T =25

℃

unless otherwise noted)  

■

J

Parameter  

Symbol  

Conditions  

Min  

Typ  

Max  

Units  

Static Parameter  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

BV

DSS  

V

GS

= 0V, I

D

=250

μA  

V

DS

=60V,V

GS

=0V  

60  

V

I

DSS  

1

μA  

nA  

nA  

V

I

GSS1  

I

GSS2  

V

GS(th)  

V

GS

=

±

20V, V

DS

=0V  

V

GS

=

±

10V, V

DS

=0V  

V

DS

= V

GS

, I

D

=250

μA  

V

GS

= 10V, I

D

=-300mA  

V

GS

= 4.5V, I

D

=200mA  

I

S

=300mA,V

GS

=0V  

±

100  

±

50  

2.5  

Gate-Body Leakage Current  

Gate Threshold Voltage  

1

1.5  

1.2  

1.3  

2.5  

Static Drain-Source On-Resistance  

R

DS(ON)  

Ω

3.0  

Diode Forward Voltage  

Maximum Body-Diode Continuous Current  

Dynamic Parameters  

Input Capacitance  

V

SD  

1.2  

V

I

S  

340  

mA  

C

iss  

C

oss  

C

rss  

16  

10  

Output Capacitance  

V

DS

=30V,V

GS

=0V,f=1MHZ  

pF  

Reverse Transfer Capacitance  

Switching Parameters  

T

o

tal Gate Charge  

5.5  

Q

g  

t

D(on)  

t

D(off)  

t

rr  

V

GS

=10V,V

DS

=30

V

,I

D

=0.3A  

1.7  

5

2.4  

nC  

ns  

ns  

Turn-on Delay Time  

V

GS

=10V,V

DD

=30V, I

D

=300mA,  

R

GEN

=6

Ω  

Turn-off Delay Time  

17  

30  

V

GS

=0V,I

S

=300mA,V

R

=25V, dI

S

/dt=-  

Reverse recovery Time  

100A/

μ

s  

A. Pulse Test: Pulse Width

≤

300us,Duty cycle

≤

2%.  

B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.  

2/5  

Rev

:

03.12.2021  

LM-MMBF170-7-F  

■

Typical Performance Characteristics  

Figure1. Output

 

Characteristics  

Figure2. Transfer

 

Characteristics  

Figure3. Capacitance

 

Characteristics  

Figure4. Gate Charge  

Figure5. Drain-Source on Resistance  

Figure6. Drain-Source on Resistance  

3/5  

Rev

:

03.12.2021  

LM-MMBF170-7-F  

Figure7. Safe Operation Area  

Figure8. Switching wave  

4/5  

Rev

:

03.12.2021  

LM-MMBF170-7-F  

■

SOT-23 Package

 

information  

■SOT

-23 Suggested Pad Layout  

Shanghai Leiditech Electronic Co.,Ltd  

Email: sale1@leiditech.com  

T

e

l :

 

+86- 021 50828806  

Fax : +86- 021 50477059  

5/5  

Rev

:

03.12.2021