Leiditech-SE3401
| Part # | Leiditech-SE3401 |
Download  | Leiditech-SE3401 |
SE3401
P-Channel Enhancement Mode Power MOSFET
Product Summary
●
V
DS
-30V
●
I
D
-4.4A
●
R
DS(ON)
( at V
GS
=-10V)
●
R
DS(ON)
( at V
GS
=-4.5V)
●
R
DS(ON)
( at V
GS
=-2.5V)
＜
55 mohm
＜
68 mohm
＜
96 mohm
General Description
●
Trench Power LV MOSFET technology
●
High density cell design for Low R
DS(ON)
●
High Speed switching
Applications
●
Battery protection
●
Load switch
●
Power management
Absolute Maximum Ratings
(T =25
℃
unless otherwise noted)
■
A
Parameter
Symbol
Maximum
-30
Unit
V
Drain-source Voltage
Gate-source Voltage
Drain Current
V
DS
V
GS
±
12
V
T
A
=25
℃
@ Steady State
T
A
=70
℃
@ Steady State
-4.4
-3.5
I
D
A
Pulsed Drain Current
A
Total Power Dissipation @ T
A
=25
℃
I
DM
-27
1.2
A
P
D
W
Thermal Resistance Junction-to-Ambient @ Steady State
B
Junction and Storage Temperature Range
R
θ
JA
105
℃
/
W
℃
T
J
,T
STG
-55
～
+150
Ordering Information
(Example)
■
PACKING
PREFERED P/N
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
Marking
DELIVERY MODE
CODE
SE3401
F2
3401.
3000
30000
120000
7“
reel
1/5
Rev
:
01.06.2018
SE3401
Electrical Characteristics
(T =25
℃
unless otherwise noted)
■
J
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
BV
DSS
V
GS
= 0V, I
D
=-250
μA
V
DS
=-30V,V
GS
=0V,T
C
=25
℃
V
GS
=
±
12V, V
DS
=0V
V
DS
= V
GS
, I
D
=-250
μA
V
GS
= -10V, I
D
=-4.4A
V
GS
= -4.5V, I
D
=-4A
-30
V
I
DSS
-1
±
100
-1.4
55
μA
nA
V
I
GSS
V
GS(th)
-0.6
-0.9
45.5
52
Static Drain-Source On-Resistance
R
DS(ON)
68
mΩ
V
GS
= -2.5V, I
D
=-2A
64
96
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Dynamic Parameters
Input Capacitance
V
SD
I
S
=-4.4A,V
GS
=0V
-0.8
-1.2
-4.4
V
A
I
S
C
iss
C
oss
C
rss
680
105
68
Output Capacitance
V
DS
=-15V,V
GS
=0V,f=1MHZ
pF
Reverse Transfer Capacitance
Switching Parameters
Total Gate Charge
Q
g
Q
gs
Q
gd
t
D(on)
t
r
7.2
1.2
1.6
15
Gate Source Charge
Gate Drain Charge
V
GS
=-10V,V
DS
=-15V,I
D
=-4.4A
nC
Turn-on Delay Time
Turn-on Rise Time
63
V
GS
=-10V,V
DD
=-15V,R
L
=15
Ω
, I
D
=-1A,
R
GEN
=2.5
Ω
ns
Turn-off Delay Time
t
D(off)
21
Turn-off Fall Time
t
f
12
A. Pulse
Test: Pulse Width
≤
300us,Duty cycle
≤
2%.
B. Device
mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
2/5
Rev
:
01.06.2018
SE3401
■
Typical Performance Characteristics
Figure1. Output
Characteristics
Figure2. Transfer
Characteristics
Figure3. Capacitance
Characteristics
Figure4. Gate Charge
Figure5. Drain-Source on Resistance
Figure6. Drain-Source on Resistance
3/5
Rev
:
01.06.2018
SE3401
■
SOT-23 Package
information
■
SOT-23 Suggested Pad Layout
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
T
e
l :
+86- 021 50828806
Fax : +86- 021 50477059
5/5
Rev
:
01.06.2018
