Leiditech-SQ2308CES
| Part # | Leiditech-SQ2308CES |
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SQ2308CES
Description
uses advanced trench
technology
SQ2308CES
The
Dimensions SOT-23
charge and
to provide excellent R
DS(ON)
, low gate
This
operation with gate voltages as low as 4.5
V
.
device is suitable for use as a Battery protection
or in other Switching application.
General Features
V
DS
= 60V
I
D
=3A
R
DS(ON)
< 100
m
Ω @ V
GS
=10V
Pin Configuration
Application
Battery protection
●
●
Load switch
●
Uninterruptible power supply
Package Marking and Ordering Information
Device
Device Marking
Device Package
Reel Size
Tape width
Quantity
SQ2308CES
6003
SOT-23
–
–
3000 units
unless otherwise noted)
Absolute Maximum Ratings (TC=25
℃
Symbol
V
DS
Parameter
Rating
60
Units
Drain-Source Voltage
V
V
V
GS
±
20
3.0
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
A
A
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
1.8
9.2
A
T
o
tal Power Dissipation
3
1
W
P
D
@T
A
=25
℃
T
STG
Storage
T
e
mperature Range
-55 to 150
-55 to 150
125
℃
T
J
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
℃
R
θ
JA
℃
/W
℃
/W
R
θ
JC
80
Rev
:
01.0
6
.2021
1
/
5
SQ2308CES
Electrical Characteristics (TJ=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=2A
Min.
60
Typ.
—
Max. Unit
BV
DSS
Drain-Source Breakdown Voltage
—
—
V
△
BV
DSS
/△
T
J
BV
DSS
T
e
mperature Coefficient
—
0.054
80
V/
℃
—
100
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS
=4.5V , I
D
=1A
—
1.2
85
—
110
2.5
m
Ω
R
DS(ON)
V
GS(th)
V
△
V
GS(th)
V
GS(th)
T
e
mperature Coefficient
—
—
-4.96
—
—
1
mV/
℃
V
GS
=V
DS
, I
D
=250uA
V
DS
=48V , V
GS
=0V , T
J
=25
℃
I
DSS
Drain-Source Leakage Current
uA
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5
±
100
—
V
DS
=48V , V
GS
=0V , T
J
=55
℃
I
GSS
gfs
Q
g
Gate-Source Leakage Current
Forward Transconductance
T
o
tal Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
nA
S
V
GS
=
±
20V , V
DS
=0V
V
DS
=5V , I
D
=2A
13
5
7.0
2.4
2.7
3.2
13
Q
gs
Q
gd
T
d(on)
T
r
1.68
1.9
1.6
7.2
25
V
DS
=48V , V
GS
=4.5V , I
D
=2A
nC
ns
Turn-On Delay Time
Rise Time
V
DD
=30V , V
GS
=10V ,
R
G
=3.3
,
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
50
I
D
=2A
14.4
511
38
28.8
715
53
C
iss
C
oss
C
rss
I
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
1,4
Pulsed Source Current
2,4
V
DS
=15V , V
GS
=0V , f=1MHz
V
G
=V
D
=0V , Force Current
pF
25
35
—
2.3
9.2
A
A
I
SM
—
V
SD
t
rr
Diode Forward Voltage
2
Reverse Recovery Time
—
—
—
1.2
—
V
V
GS
=0V , I
S
=1A , T
J
=25
℃
9.7
nS
I
F
=2A
,
dI/dt=100A/µs
,
T
J
=25
℃
Q
rr
Reverse Recovery Charge
—
5.8
—
nC
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature.
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Rev
:
01.0
6
.2021
2
/
5
SQ2308CES
Typical Characteristics
100
95
90
85
80
75
10
I
D
=2A
V
GS
=10V
8
6
4
2
0
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
V
GS
=3V
0
0.5
1
1.5
2
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
10
8
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0.2
0.4
0.6
0.8
1
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
-50
0
50
100
150
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
Rev
:
01.0
6
.2021
3
/
5
SQ2308CES
1000
100
10
1 0 . 0 0
1 . 0 0
0 . 1 0
0 . 0 1
F=1.0MHz
Ciss
100us
1 0 m
1 0 0 m
Coss
1s
T
A
= 2
5
℃
Crss
21
DC
S i n g l e
P
0 . 1
1
10
V
DS
(V)
100
1000
1
5
9
13
17
25
V
DS
Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P
DM
T
ON
0.001 SINGLE
PULSE
T
D = T
ON
/T
T
Jpeak
= T
A
+
P
D
M
x R
θJA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
V
DS
90%
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
Rev
:
01.0
6
.2021
4
/
5
SQ2308CES
Package Mechanical Data-SOT-23
Dimensions in Millimeters
Symbol
MIN.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
MAX.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A
A1
A2
b
c
D
E
E1
e
0.950TYP
0.550REF
e1
L
1.800
2.000
L1
θ
0.300
0°
0.500
8°
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
T
e
l :
+86- 021 50828806
Fax : +86- 021 50477059
Rev
:
01.0
6
.2021
5
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5
