LGE-2N3906
| Part # | LGE-2N3906 |
Download  | LGE-2N3906 |
2N390
6
(
PNP
)
TO-92 Bipolar Transistors
1. EMITTER
2. BASE
TO-92
3.
COLLECTOR
Features
ꢀ
PNP silicon epitaxial planar transistor for switching and
Amplifier applications
As complementary type, the NPN transistor 2N3904 is
Recommended
This transistor is also available in the SOT-23 case with
the type designation MMBT3906
ꢀ
ꢀ
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
-40
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-40
V
Dimensions in inches and (millimeters)
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
-0.2
A
P
C
0.625
150
W
℃
℃
T
J
T
stg
Storage
T
e
mperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test
conditions
MIN
-40
-40
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off
current
I
C
= -10
μ
A, I
E
=0
I
C
=-1mA , I
B
=0
V
I
E
= -10
μ
A, I
C
=0
V
V
CB
= -40
V
,
I
E
=0
V
CE
= -30
V
,
V
BE(off)
=-3V
-0.1
-50
μ
A
nA
μ
A
Collector cut-off
current
I
CEX
Emitter cut-off
current
I
EBO
V
EB
= -5 V ,
I
C
=0
-0.1
400
h
FE1
V
CE
=-1
V
,
I
C
= -10mA
V
CE
=-1
V
,
I
C
= -50mA
V
CE
=-1
V
,
I
C
= -100mA
I
C
= -50mA, I
B
= -5mA
I
C
= -50mA, I
B
= -5mA
100
60
DC current gain
h
FE2
h
FE3
30
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
-0.4
V
V
-0.95
V
CE
=-20
V
,
I
C
= -10mA
f = 100MHz
CC
=-3
V
,
V
BE
=-0.5
V
,
I
C
=-10mA,I
B1
=-1mA
CC
=-3
V
,
Ic=-10mA
I
B1
=I
B2
=-1mA
Transition frequency
f
T
250
MHz
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
V
35
35
ns
ns
ns
ns
ts
tf
V
225
75
CLASSIFICATION OF h
FE1
Rank
O
Y
G
Range
100-200
200-300
300-400
mail:lge@lgesemi.com
Revision:201
70701
-P1
