LGE-2SC1815H
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2SC1815
Silicon Epitaxial Planar Transistor
FEATURES
A
SOT-23
Min
z
High voltage and high current
Dim
A
Max
3.10
1.50
V
CEO
=50V(Min),I
C
=150mA(Max).
Excellent h
FE
linearity : h
FE(2)
=100 (Typ) at V
CE
=6V,I
C
=150mA
h
FE
(I
C
=0.1mA) / h
FE
(I
C
=2mA=0.95(Typ))
Low noise.
2.70
E
z
B
1.10
K
B
C
D
E
1.0 Typical
0.4 Typical
z
z
0.35
0.48
2.00
0.1
J
D
Complementary to 2SA1015.
G
H
J
1.80
0.02
APPLICATIONS
G
z
Audio frequency general purpose amplifier applications.
0.1 Typical
H
K
2.20
2.60
C
All Dimensions in mm
ORDERING INFORMATION
Type No.
2SC1815
Marking
HF
Package Code
SOT-23
SOT-23
MAXIMUM RATING
@
T
a
=25
℃
unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Units
Collector-Base Voltage
60
V
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
5
V
Collector Current -Continuous
Base Current
150
mA
mA
mW
℃
I
B
50
Collector Dissipation
P
C
400
Junction and Storage Temperature
T
j,
T
stg
-55 to +150
ELECTRICAL CHARACTERISTICS
@
T
a
=2
5℃ unless otherwise specified
Parameter
Symbol Test
conditions
MIN
60
50
5
TYP MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
C
=100
μ
A,I
E
=0
I
C
=0.1mA,I
B
=0
I
C
=0.1mA,I
C
=0
V
CB
=60V,I
E
=0
V
CE
=50V,I
B
=0
V
EB
=5V,I
C
=0
V
V
V
0.1
0.1
0.1
400
μ
A
μ
A
μ
A
Collector cut-off current
I
CEO
Emitter cut-off current
I
EBO
V
CE
=6V,I
C
=2mA
130
25
DC current gain
h
FE
V
CE
=6V,I
C
=150mA
100
0.1
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE(sat)
V
BE(sat)
f
T
0.25
1
V
V
V
CE
=10V, I
C
= 1mA
f=30MHz
80
MHz
CLASSIFICATION OF h
FE(1)
Rank
L
H
Range
130-200
200-400
mail:lge@lgesemi.com
Revision:201
70701
-P1
