LGE-BC547B
| Part # | LGE-BC547B |
Download  | LGE-BC547B |
BC546/BC547/BC548
(
NPN
)
T
O-92 Bipolar Transistors
TO-92
1. COLLECTOR
2. BASE
3. EMITTER
Features
High Voltage
Complement to BC556,BC557,BC558
ꢀ
ꢀ
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Value
Units
Collector-Base Voltage
BC546
BC547
BC548
80
50
30
V
CBO
V
Collector-Emitter Voltage
Emitter-Base Voltage
BC546
BC547
BC548
65
45
30
V
V
CEO
6
100
V
EBO
I
C
V
mA
mW
℃
Dimensions in inches and (millimeters)
Collector Current -Continuous
T
o
tal Device Dissipation
Junction
T
e
mperature
625
P
D
150
T
J
Storage
T
e
mperature
-55-150
T
stg
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
BC546
BC547
BC548
80
50
30
V
CBO
I
C
= 100
μ
A , I
E
=0
V
Collector-emitter breakdown voltage
BC546
BC547
BC548
65
45
30
V
CEO
V
EBO
I
CBO
I
C
= 1mA , I
B
=0
V
V
Emitter-base breakdown voltage
Collector cut-off current
I
E
= 10
μ
A, I
C
=0
6
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
V
CB
= 70
V
,
I
E
=0
0.1
V
V
CB
= 50
V
,
I
E
=0
CB
= 30
V
,
I
E
=0
μ
A
Collector cut-off current
Emitter cut-off current
DC current gain
V
CE
= 60
V
,
I
B
=0
I
CEO
V
V
CE
= 45
V
,
I
B
=0
CE
= 30
V
,
I
B
=0
0.1
0.1
μ
A
μ
A
I
EBO
V
EB
= 5V, I
C
=0
110
110
110
110
200
420
800
800
800
220
450
800
h
FE
V
CE
=5
V
,
I
C
= 2mA
BC546A/BC547A/BC548A
BC546B/BC547B/BC548B
BC546C/BC547C/BC548C
Collector-emitter saturation voltage
V
CE(sat)
V
BE(sat)
I
C
=100mA, I
B
= 5mA
I
C
= 100mA, I
B
=5mA
0.3
1.1
V
V
Base-emitter saturation voltage
Transition frequency
V
CE
= 5V, I
C
= 10mA
f
T
150
MHz
f = 100MHz
Revision:201
70701
-P1
mail:lge@lgesemi.com
