LGE-BC549C
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BC549B,C BC550B,C
Low Noise Transistors
NPN Silicon
UM RATINGS
Rating
Symbol
BC549 BC550
Unit
Vdc
Collecto
r
–
E
mitter Voltage
Collecto
r
–
B
ase Voltage
Emitte
r
–
B
ase Voltage
Collector Current — Continuous
V
CEO
V
CBO
V
EBO
30
30
45
50
Vdc
1
5.0
Vdc
2
3
I
C
100
mAdc
T
o
tal Device Dissipation @ T
= 25
°
C
Derate above 25
°
C
P
D
625
5.0
mW
mW/
°
C
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
A
T
o
tal Device Dissipation @ T
= 25
°
C
Derate above 25
°
C
P
D
1.5
12
Watt
mW/
°
C
C
Operating and Storage Junction
T
e
mperature Range
T ,
T
–
5
5 to +150
°
C
J
stg
COLLECTOR
1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°
C/W
°
C/W
2
BASE
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
83.3
3
EMITTER
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
–
E
mitter Breakdown Voltage
(I =
10 mAdc, I
= 0)
V
Vdc
(BR)CEO
BC549B,C
BC550B,C
30
45
—
—
—
—
C
B
Collecto
r
–
B
ase Breakdown Voltage
(I =
10
µ
Adc, I
= 0)
V
Vdc
Vdc
(BR)CBO
BC549B,C
BC550B,C
30
50
—
—
—
—
C
E
Emitte
r
–
B
ase Breakdown Voltage
(I =
10 Adc,
I =
0)
V
5.0
—
—
(BR)EBO
E
C
Collector Cutoff Current
I
CBO
(V
CB
(V
CB
= 30
V
, I
=
0
)
—
—
—
—
15
5.0
nAdc
µ
Adc
E
= 30
V
, I
=
0
, T
= +125
°
C)
E
A
Emitter Cutoff Current
(V =
4.0 Vdc, I
= 0)
I
—
—
15
nAdc
EBO
EB
C
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BC549B,C BC550B,C
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I =
10
µ
Adc, V
C CE
h
FE
—
= 5.0 Vdc)
= 5.0 Vdc)
BC549B/550B
BC549C/550C
BC549B/550B
BC549C/550C
100
100
200
420
150
270
290
500
—
—
450
800
(I =
2.0 mAdc, V
C CE
Collecto
r
–
E
mitter Saturation
V
o
ltage
(I =
10 mAdc, I
= 0.5 mAdc)
V
V
Vdc
CE(sat)
—
—
—
0.075
0.3
0.25
0.25
0.6
0.6
C
B
(I =
10 mAdc, I
= see note 1)
C
B
(I =
100 mAdc, I
= 5.0 mAdc, see note 2)
C
B
Base–Emitter Saturation
V
o
ltage
(I =
100 mAdc, I
= 5.0 mAdc)
—
1.1
—
Vdc
Vdc
BE(sat)
C
B
Base–Emitter On Voltage
(I =
10
µ
Adc, V
= 5.0 Vdc)
V
BE(on)
—
—
0.55
0.52
0.55
0.62
—
—
0.7
C
C
CE
CE
CE
(I =
100
µ
Adc, V
= 5.0 Vdc)
= 5.0 Vdc)
(I =
2.0 mAdc, V
C
SMALL–SIGNAL CHARACTERISTICS
Curren
t
–
G
ain — Bandwidth Product
f
—
—
250
2.5
—
—
MHz
pF
T
(I =
10 mAdc, V
C CE
= 5.0 Vdc, f = 100 MHz)
Collector–Base Capacitance
(V =
10 Vdc, I
= 0, f = 1.0 MHz)
C
cbo
CB
E
Small–Signal Current Gain
h
fe
—
(I =
2.0 mAdc, V
C
= 5.0
V
, f =
1
.0 kHz)
BC549B/BC550B
BC549C/BC550C
240
450
330
600
500
900
CE
Noise Figure
dB
(I =
200
µ
Adc, V
(I =
200
µ
Adc, V
C
= 5.0 Vdc, R
= 2.0 k
Ω
, f = 1.0 kHz)
NF
NF
—
—
0.6
—
2.5
10
C
CE
CE
S
1
2
= 5.0 Vdc, R
= 100 k
Ω
, f = 1.0 kHz)
S
NOTES:
1. I
is value for which I
= 11 mA at V
2. Pulse test = 300
µ
s – Duty cycle = 2%.
= 1.0
V
.
B
C
CE
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
Email:lge@luguang.cn
BC549B,C BC550B,C
2.0
1.5
1.0
0.9
T
= 25
°
C
V
= 10 V
A
CE
= 25
°
C
T
A
0.8
0.7
0.6
0.5
0.4
V
@ I
/I =
10
C B
BE(sat)
1.0
0.8
V
@ V
= 10 V
CE
BE(on)
0.6
0.4
0.3
0.3
0.2
0.1
0
V
@ I
/I =
10
C B
CE(sat)
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100
I
, COLLECTOR CURRENT (mAdc)
I ,
COLLECTOR CURRENT (mAdc)
C
C
Figure 2. Normalized DC Current Gain
Figure 3. “Saturation” and “On” Voltages
10
7.0
5.0
400
300
200
T
= 25
°
C
A
C
ib
100
80
60
V
T
= 10 V
CE
= 25
°
C
3.0
2.0
A
C
ob
40
30
20
1.0
0.4 0.6
0.5 0.7
1.0
2.0
5.0 7.0
10
20
50
1.0
2.0
V ,
REVERSE VO
L
TAGE (VOLTS)
R
4.0
10
20
40
I
, COLLECTOR CURRENT (mAdc)
C
Figure 4. Current–Gain — Bandwidth Product
Figure 5. Capacitance
170
160
150
V
= 10 V
CE
f = 1.0 kHz
= 25
140
130
120
T
°
C
A
0.1
0.2
0.5
1.0
2.0
5.0
10
I
, COLLECTOR CURRENT (mAdc)
C
Figure 6. Base Spreading Resistance
Email:lge@luguang.cn
BC549B,C BC550B,C
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
3. CONTOUR
OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION
F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 17:
PIN 1.
COLLECTOR
2. BASE
3. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
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