LGE-BC558B
| Part # | LGE-BC558B |
Download  | LGE-BC558B |
BC556/557/558
(
PNP
)
T
O-92 Bipolar Transistors
COLLECTOR
1.
TO-92
2. BASE
3.
EMITTER
Features
ꢀ
High Voltage
Complement to BC546/BC547/BC548
ꢀ
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
Parameter
Value
Units
Collector-Base Voltage
BC556
BC557
BC558
-80
-50
-30
-65
V
CBO
V
-45
-30
V
V
CEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
EBO
I
C
-5
-100
625
V
mA
mW
℃
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
Dimensions in inches and (millimeters)
P
C
T
J
150
T
stg
Storage
T
e
mperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
BC556
BC557
BC558
BC556
BC557
BC558
-80
V
CBO
I
C
= -100
μ
A, I
E
=0
-50
-30
-65
-45
-30
V
Collector-emitter breakdown voltage
V
CEO
V
EBO
I
CBO
I
C
= -2mA , I
B
=0
V
V
Emitter-base breakdown voltage
Collector cut-off current
I
E
= -100
μ
A, I
C
=0
-5
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
BC557A
V
CB
=- 70
V
,
I
E
=0
V
V
CB
= -45
V
,
I
E
=0
CB
= -25
V
,
I
E
=0
-0.1
-0.1
-0.1
μ
A
Collector cut-off current
Emitter cut-off current
DC current gain
V
CE
= -60
V
,
I
B
=0
I
CEO
V
V
CE
= -40
V
,
I
B
=0
CE
= -25
V
,
I
B
=0
μ
A
μ
A
I
EBO
V
EB
= -5
V
,
I
C
=0
120
120
120
120
180
420
800
800
800
220
460
800
h
FE
V
CE
=-5
V
,
I
C
= -2mA
BC556B/BC557B/BC558B
BC557C
Collector-emitter saturation voltage
V
CE(sat)
V
BE(sat)
I
C
=-100mA, I
B
= -5mA
I
C
= -100mA, I
B
=-5mA
-0.65
-1
V
V
Base-emitter saturation voltage
Transition frequency
V
CE
= -5
V
,
I
C
= -10mA
f
T
150
MHz
f =
100MHz
Revision:201
70701
-P1
mail:lge@lgesemi.com
