LGE-BC847B
| Part # | LGE-BC847B |
Download  | LGE-BC847B |
BC846/847/848
NPN
general purpose Transistor
FEATURES
A
SOT-23
Min
Dim
A
Max
3.10
1.50
z
z
z
z
High current gain.
2.70
E
Excellent h
FE
linearity .
B
1.10
K
B
Low noise between 30Hz and 15kHz.
For AF input stages and driver applications.
C
D
E
1.0 Typical
0.4 Typical
0.35
0.48
2.00
0.1
J
D
G
H
J
1.80
0.02
APPLICATIONS
G
z
General purpose switching and amplification.
0.1 Typical
H
K
2.20
2.60
C
ORDERING INFORMATION
All Dimensions in mm
Type No.
Marking
Package
BC846A/B
BC847A/B/C
BC848A/B/C
1A/1B
1E/1F/1G
1J/1K/1L
SOT-23
SOT-23
SOT-23
MAXIMUM RATING
@
T
a
=25
℃
unless otherwise specified
Symbol
Parameter
Value
Units
Collector-Base Voltage
BC846 80
V
CBO
BC847 50
BC848 30
BC846 65
BC847 45
BC848 30
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
CEO
V
V
BC846
BC847
BC848
6
6
5
V
EBO
I
C
Collector Current -Continuous
Collector Dissipation
0.1
A
P
C
250
mW
℃
/W
℃
R
θ
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
417
JA
T
j,
T
stg
-55 to +150
ELECTRICAL CHARACTERISTICS
@
T
a
=25
℃
unless otherwise specified
Parameter
Symbol Test
conditions
MIN
TYP MAX
UNIT
Collector-base breakdown voltage BC846
80
50
30
65
45
30
6
BC847
V
(BR)CBO
I
C
=10
μ
A,I
E
=0
V
BC848
Collector-emitter breakdown voltageBC846
BC847
V
(BR)CEO
I
C
=10mA,I
B
=0
V
V
BC848
Emitter-base breakdown voltage
BC846
BC847
BC848
V
(BR)EBO
I
E
=10
μ
A,I
C
=0
6
5
V
CB
=30V,I
E
=0
I
CBO
15
5
nA
uA
Collector-base cut-off current
Emitter-base cut-off current
V
CB
=30V,I
E
=0,T
j
=150
℃
I
EBO
V
EB
=5V,I
C
=0
100
nA
DC current gain
BC846A,847A,848A
BC846B,847B,848B
BC847C,848C
90
h
FE
V
CE
=5V,I
C
=10uA
V
CE
=5V,I
C
=2mA
150
270
DC current gain
BC846A,847A,848A
BC846B,847B,848B
BC847C,848C
110
220
450
800
h
FE
200
420
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
I
C
=2mA,V
CE
=5V
I
C
=10mA,V
CE
=5V
V
CB
=10V,I
E
=I
e
=0,
f=1MHz
0.09 0.25
0.2 0.6
0.7
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
V
CE(sat)
V
BE(sat)
V
BE(on)
C
C
V
V
0.9
0.58
100
0.66 0.7
0.77
V
Collector capacitance
2.5
pF
MHz
V
CE
=5V, I
C
= 10mA
f=100MHz
Transition frequency
f
T
mail:lge@lgesemi.com
Revision:201
70701
-P1
