LGE-BD434
| Part # | LGE-BD434 |
Download  | LGE-BD434 |
BD
434
/
436
(
PNP
)
TO-
126
Transistor
TO-
126
2.500
7.400
1. EMITTER
2. COLLECOTR
3. BASE
2.900
1.100
1.500
7.800
3.900
4.100
3.000
3.200
10.6
0
0
11.0
0
0
0.000
0.300
3
2
1
Features
2.100
2.300
Amplifier and switching applications
1.170
1.370
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
15.3
0
0
15.7
0
0
Symbol
V
CBO
Parameter
Value
-22
Units
Collector-Base Voltage
BD434
BD436
BD434
BD436
V
-32
0.660
0.860
V
CEO
Collector-Emitter Voltage
-22
V
-32
0.450
0.600
2.290 TYP
4.480
V
EBO
I
C
Emitter-Base Voltage
-5
V
A
4.680
Collector Current –Continuous
Collector Power Dissipation
Junction
T
e
mperature
-4
Dimensions in inches and (millimeters)
P
C
1.25
150
-55-150
W
℃
℃
T
J
T
stg
Storage
T
e
mperature
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
MIN
-22
-32
-22
-32
-5
TYP
MAX
UNIT
Test
conditions
I
C
=-100
μ
A,I
E
=0
BD434
BD436
Collector-base breakdown voltage
V
(BR)CBO
V
I
C
=-100mA,I
B
=0
BD434
BD436
(SUS)(1)
Collector-emitter breakdown voltage
V
CEO
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
(BR)EBO
I
CBO
V
I
E
=-100
μ
A, I
C
=0
V
CB
=-22
V
,
I
E
=0
CB
=-32
V
,
I
E
=0
BD434
BD436
-100
-1
μ
A
mA
V
I
EBO
V
EB
=-5
V
,
I
C
=0
(1)
h
FE(1)
40
85
50
V
CE
=-5
V
,
I
C
=-10mA
V
CE
=-1
V
,
I
C
=-500mA
V
CE
=-1
V
,
I
C
=-2A
I
C
=-2A, I
B
=-0.2A
V
CE
=-1
V
,
I
C
=-2A
V
CE
=-1
V
,
I
C
=-250mA
(1)
DC current gain
h
FE(2)
375
(1)
h
FE(3)
(1)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
(1)
Pulse test.
V
CE(sat)
-0.5
-1.1
V
V
(1)
V
BE
f
T
3
MHz
mail:lge@luguang.cn
