LGE-BSS123

BSS123  

SMD Power MOSFET Transistor (N-Channel)  

SMD Power MOSFET Transistor (N-Channel)  

Features  

SOT-23  

•

Low On-Resistance:6Ω  

•

Low input capacitance:20pF  

•

Low output capacitance:9pF  

•

Low threshole:2.8V  

•

Fast switching speed:20nS  

•

RoHS Compliance and Halogen Free  

Application  

•

DC to DC converter  

•

Cellular & PCMCIA card  

•

Cordless telephone  

Dimensions in inches and (millimeters)  

•

Power management in portable and battery etc.  

Mechanical Data  

Case:  

Terminals:  

Weight:  

SOT-23, Plastic Package  

Solderable per MIL-STD-202G, Method 208  

0.008 gram  

Maximum Ratings

(T

Ambient

=25ºC unless noted otherwise)  

Symbol  

Description  

BSS123  

Unit  

Conditions  

Marking Code  

SA  

100  

± 20  

170  

680  

225  

556  

Drain-Source Voltage  

V

V

V

DSS  

V

GSS  

I

D  

Gate-Source Voltage  

Drain Current Continuous  

mA  

mA  

mW  

° C/W  

T

A

=25° C  

T

A

=25° C  

Drain Current Pulsed (Note 1)  

Drain Power Dissipation (Note 2)  

Thermal Resistance, Junction to Ambient  

I

DM  

P

D  

R

thJA  

T

J,  

T

STG  

-55 to +150  

° C  

Storage Temperature Range  

ht

t

p

:

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Revision:201

70701

-P1  

mail:lge@lgesemi.com  

BSS123  

SMD Power MOSFET Transistor (N-Channel)  

Electrical Characteristics

(T

Ambient

=25ºC unless noted otherwise)  

Symbol  

Description  

Min.  

Typ.  

Max.  

Unit  

Conditions  

100  

–

–

–

–

–

V

V

V

GS

=0V, I

D

=250µA  

V

DS

=V

GS

, I

D

=1mA  

V

DS

=0V, V

GS

=20V  

Drain-Source Breakdown Voltage  

Gate Threshold Voltage  

V

(BR)DSS  

V

GS(th)  

I

GSS  

0.8  

2.8  

50  

15  

Gate-Body Leakage Current  

–

–

nA  

μA  

V

DS

=0V, V

GS

=100V,  

T

J

=25° C  

V

DS

=0V, V

GS

=100V,  

T

J

=125° C  

Zero Gate Voltage Drain Current  

I

DSS  

–

–

–

5.0  

–

60  

6.0  

–

μA  

Ω

Static Drain-to-Source On-Resistance  

Forward Transconductance  

V

GS

=10V, I

D

=0.1A  

R

DS(ON)  

8.0  

mS  

V

DS

=25V, I

D

=100mA  

g

FS  

Dynamic Characteristics

(T

Ambient

=25ºC unless noted otherwise)  

Symbol  

Description  

Input Capacitance  

Min.  

Typ.  

Max.  

Unit  

Conditions  

–

–

–

–

–

20  

4.0  

9.0  

20  

–

–

–

–

–

C

iss  

C

rss  

C

oss  

t

on  

V

DS

=25V, V

GS

=0V,  

f=1MHz  

pF  

Reverse Transfer Capacitance  

Output Capacitance  

Switching Time Turn-On Time  

Switching Time Turn-Off Time  

V

CC

=30V, R

GS

=50Ω  

I

C

=0.28A, V

GS

=10V  

nS  

40  

t

off  

Reverse Diode

(T

Ambient

=25ºC)  

Symbol  

V

SD  

Description  

Min.  

Typ.  

Max.  

Unit  

Conditions  

–

–

1.3  

V

V

GS

=0V, I

D

=0.34A  

Drain-Source Diode Forward Voltage  

Note:

(1) Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%  

(2) RF-5=1.0X0.75X0.062m.  

ht

t

p

:

//

.c

o

m  

mail:lge@lgesemi.com  

Revision:201

70701

-P1  

BSS123  

SMD Power MOSFET Transistor (N-Channel)  

Switching Time Test Circuit  

Typical Characteristics Curves  

Fig.2- Transfer Characteristics  

Fig.1- Ohmic Region  

Drain-Source Voltage

V

DS

(V)  

Gate-Source Voltage

V

GS

(V)  

ht

t

p

:

//

.c

o

m  

mail:lge@lgesemi.com  

Revision:201

70701

-P1  

BSS123  

SMD Power MOSFET Transistor (N-Channel)  

Fig.3- Temperature vs. Static Drain-Source  

On-Resistance  

Fig.4- Temperature vs. Gate Threshold Voltage  

Temperature T (° C)  

Temperature T (° C)  

ht

t

p

:

//

.c

o

m  

mail:lge@lgesemi.com  

Revision:201

70701

-P1  

BSS123  

SMD Power MOSFET Transistor (N-Channel)  

Dimensions in mm  

1. Source  

2. Gate  

3. Drain  

SOT-23  

ht

t

p

:

//

.c

o

m  

mail:lge@lgesemi.com  

Revision:201

70701

-P1