LGE-BSS84
| Part # | LGE-BSS84 |
Download  | LGE-BSS84 |
BSS84
P-CHANNEL MOSFET
SOT-23
FEATURE
Energy Efficient
Low Threshold Voltage
High-speed Switching
Miniature Surface Mount Package Saves Board Space
APPLICATION
DC−DC converters,load switching, power
management in portable and battery−powered products such
as computers, printers, cellular and cordless telephones.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Parameter
Symbol
Value
-50
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
DS
V
GS
I
D
±20
V
-0.13
-0.52
225
A
Pulsed Drain Current
(note 1)
@tp <
10 μs
Power Dissipation
I
DM
P
D
A
mW
℃
/W
℃
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
R
θJA
T
J
556
150
Storage Temperature
T
STG
-55~+150
℃
Maximum Lead Temperature for Soldering Purposes , Duration
for 5 Seconds
T
L
260
℃
Revision:201
70701
-P1
mail:lge@lgesemi.com
BSS84
P-CHANNEL MOSFET
MOSFET ELECTRICAL
CHARACTERISTICS
T =25
unless otherwise specified
℃
a
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC CHARACTERISTICS
Drain-source breakdown voltage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
=-250µA
V
DS
=-50V,V
GS
= 0V
V
DS
=-25V,V
GS
= 0V
V
GS
=±20V, V
DS
= 0V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-5V, I
D
=-0.1A
V
GS
=-10V, I
D
=-0.1A
V
DS
=-25V; I
D
=-100mA
-50
V
µA
µA
µA
V
-15
-0.1
±5
-2
Zero gate voltage drain current
Gate-body leakage current
I
GSS
Gate threshold voltage
(note 3)
V
GS(th)
-0.9
50
10
8
Ω
Drain-source on-resistance
(note 3)
R
DS(on)
g
FS
Ω
Forward transconductance
(note 1)
DYNAMIC CHARACTERISTICS (note 4)
Input capacitance
mS
C
iss
C
oss
C
rss
30
10
5
pF
pF
pF
V
DS
=5V,V
GS
=0V,f =1MHz
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
2.5
1
ns
ns
ns
ns
Turn-on rise time
V
DD
=-15V,
R
L
=50Ω,
I
D
=-2.5A
Turn-off delay time
16
8
Turn-off fall time
SOURCE−DRAIN DIODE CHARACTERISTICS
A
A
V
Continuous Current
Pulsed Current
I
S
-0.13
-0.52
-2.2
I
SM
Diode forward voltage
(note 3)
Notes :
V
SD
I
S
=-0.13A, V
GS
= 0V
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t≤10s.
3.
Pulse
T
e
st : Pulse Width≤300µs, Duty Cycle≤2%.
4. Guaranteed by design, not subject to producting.
Revision:201
70701
-P1
mail:lge@lgesemi.com
BSS84
P-CHANNEL MOSFET
Typical Characteristics
Output Characteristics
Transfer Characteristics
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
-0.0
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
-0.0
V
DS
=-10V
V
GS
=-10V
V
GS
=-6V
T
a
=25
℃
T
a
=100
℃
V
GS
=-4.5V
V
GS
=-4V
V
GS
=-3V
V
GS
=-2.5V
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
V
GS
——
R
DS(ON)
I
D
——
10
9
8
7
6
5
4
3
2
1
20
18
16
14
12
10
8
T
a
=25
℃
Pulsed
V
GS
=-5V
I
D
=-0.1A
T
a
=100
℃
6
V
GS
=-10V
4
T
a
=25
℃
2
0
-50
-100
-150
-200
-250
-300
-350
-400
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
DRAIN CURRENT
I
D
(mA)
GATE TO SOURCE VOLTAGE
V
GS
(V)
Threshold Voltage
I
S
——
V
SD
-1
-2.2
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
I
D
=-250uA
-0.1
T
a
=100
℃
T
a
=25
℃
-0.01
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
25
50
75
100
125
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
JUNCTION TEMPERATURE
T
J
(
℃
)
Revision:201
70701
-P1
mail:lge@lgesemi.com
