LGE-G2302

G

2302  

N-Channel 20-V(D-S) Mosfet  

1. GATE  

SOT-23  

2. SOURCE  

3. DRAIN  

Features  

TrenchFET Power MOSFET  

Applications  

z

z

Load Switch for Portable Devices  

DC/DC Converter  

Dimensions in inches and (millimeters)  

MARKING:

2302  

Maximum ratings (T

a

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

V

GS  

I

D  

20  

±8  

V

Continuous Drain Current  

2.1  

A

Continuous Source-Drain Current(Diode Conduction)  

Power Dissipation  

I

S  

0.6  

P

D  

0.35  

357  

W

℃

/W  

Thermal Resistance from Junction to Ambient

(

t

≤

5s)  

Operating Junction  

R

θ

JA  

T

J  

150  

℃

Storage Temperature  

T

STG  

-55 ~+150  

ht

t

p

:

//

.c

o

m  

Revision:201

8

0

5

01

-P1  

mail:lge@lgesemi.com  

G

2302  

N-Channel 20-V(D-S) Mosfet  

Electrical characteristics (T

a

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Test Condition  

Min  

Typ  

Max  

Units  

Static  

Drain-source breakdown voltage  

Gate-threshold voltage  

V

(BR)DSS

V

GS

= 0V, I

D

=10µA  

20  

V

0.95  

V

GS(th)  

I

GSS  

V

DS

=V

GS

, I

D

=50µA  

V

DS

=0V, V

GS

=±8V  

V

DS

=20V, V

GS

=0V  

V

GS

=4.5V, I

D

=3.6A  

V

GS

=2.5V, I

D

=3.1A  

V

DS

=5V, I

D

=3.6A  

I

S

=0.94A,V

GS

=0V  

0.65  

1.2  

±100  

1

Gate-body leakage  

nA  

µA  

Zero gate voltage drain current  

I

DSS  

0.045  

0.070  

8

0.060  

0.115  

Drain-source on-resistance

a  

r

DS(on)  

Ω

Forward transconductance

a  

Diode forward voltage  

Dynamic  

g

fs  

S

V

1.2  

10  

V

SD  

0.76  

Total gate charge  

Gate-source charge  

Gate-drain charge  

Input capacitance

b  

Output capacitance

b  

Reverse transfer capacitance

b  

Switching

b  

Q

g  

Q

gs  

Q

gd  

C

iss  

C

oss  

C

rss  

4.0  

0.65  

1.5  

V

DS

=10V,V

GS

=4.5V,I

D

=3.6A  

V

DS

=10V,V

GS

=0V,f=1MHz  

nC  

pF  

300  

120  

80  

Turn-on delay time  

Rise time  

t

d  

7

15  

80  

60  

25  

(on)  

V

R

L

=5.5

ꢀ

,

I

D

≈

3.6A,  

t

r  

t

d(off)  

t

f  

55  

16  

10  

ns  

Turn-off delay time  

Fall time  

V

Notes :  

a. Pulse

 

T

e

st : Pulse width

≤

300µs, duty cycle

≤

2%.  

b. These

 

parameters have no way to verify.  

ht

t

p

:

//

.c

o

m  

Revision:201

8

0

5

01

-P1  

mail:lge@lgesemi.com  

G

2302  

N-Channel 20-V(D-S) Mosfet  

Typical Characteristics  

Output Characteristics  

Transfer Characteristics  

10  

8

15  

V

GS

=3.5V,3.0V,2.5V  

T

a

=25

℃

 

T

a

=25

℃  

Pulsed  

Pulsed  

V

GS

=2.0V  

12  

9

6

4

6

V

GS

=1.5V  

2

3

0

0

0.0  

0.5  

1.0  

1.5  

2.0  

2.5  

0

2

4

6

8

10  

DRAIN TO SOURCE VOLTAGE

 

V

DS

(V)  

GATE TO SOURCE VOLTAGE

 

V

GS

(V)  

R

DS(ON)

—— V

GS  

R

DS(ON)

—— I

D  

100  

80  

60  

40  

20  

0

0.20  

0.16  

0.12  

0.08  

0.04  

0.00  

T

a

=25

℃  

T

a

=25

℃  

Pulsed  

Pulsed  

V

GS

=2.5V  

V

GS

=4.5V  

I

D

=4.5A  

0

5

10  

15  

20  

25  

30  

0

2

4

6

8

10  

GATE TO SOURCE VOLTAGE

 

V

GS

(V)  

DRAIN CURRENT

 

I

D

(A)  

ht

t

p

:

//

.c

o

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Revision:201

8

0

5

01

-P1  

mail:lge@lgesemi.com