LGE-MMBT5401
| Part # | LGE-MMBT5401 |
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MMBT5401
PNP General Purpose Transistor
1. BASE
2. EMITTER
3. COLLECTOR
A
SOT-23
Min
Dim
A
Max
3.10
1.50
FEATURES
E
2.70
B
1.10
K
B
Epitaxial planar die construction.
C
D
E
1.0 Typical
0.4 Typical
Complementary NPN type available
(MMBT5551).
J
0.35
0.48
2.00
0.1
D
G
H
J
1.80
0.02
G
Also available in lead free version.
0.1 Typical
H
K
2.20
2.60
C
All Dimensions in mm
APPLICATIONS
Ideal for medium power amplification and switching
ORDERING INFORMATION
Type No.
Marking
2L
Package Code
SOT-23
MMBT5401
MAXIMUM RATING
@
T
a
=25
℃
unless otherwise specified
Symbol
Parameter
Value
UNIT
V
CBO
collector-base voltage
-160
V
V
CEO
V
EBO
I
C
collector-emitter voltage
-150
-5
V
emitter-base voltage
V
collector current (DC)
-0.6
0.35
357
A
P
D
Total device dissipation
W
°C/W
°C
R
θ
Thermal resistance,junction to ambient
junction and storage temperature
JC
T
j
,T
stg
-55 to +150
mail:lge@lgesemi.com
Revision:201
70701
-P1
MMBT5401
PNP General Purpose Transistor
ELECTRICAL CHARACTERISTICS
@
T
a
=25
℃
unless otherwise specified
Symbol
Parameter
Test conditions
MIN.
MAX. UNIT
V
(BR)CBO
Collector-base breakdown voltage
I
C
=-100
μ
A,I
E
=0
-160
V
(BR)CEO
V
(BR)EBO
I
CBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
collector cut-off current
I
C
=-1mA,I
B
=0
-150
I
E
=-10
μ
A,I
C
=0
-5
–
I
E
= 0; V
CB
= -120V
I
C
= 0; V
EB
= -3V
-50
-50
nA
nA
I
EBO
emitter cut-off current
–
V
CE
= -5V; I
C
= -1mA
50
100
50
–
300
–
h
FE
DC current gain
V
CE
= -5V;I
C
= -10mA
V
CE
= -5V;I
C
= -50 mA
I
C
= -10 mA; I
B
= -1 mA
I
C
= -50 mA; I
B
= -5 mA
-0.2
-0.5
V
CE(sat)
collector-emitter saturation voltage
base-emitter saturation voltage
–
V
V
I
C
= -10 mA; I
B
= -1 mA
I
C
= -50 mA; I
B
= -5 mA
-1
-1
V
BE(sat)
–
I
C
= -10mA; V
CE
= -10V;
f = 100MHz
f
T
transition frequency
Output capacitance
100
300
6.0
MHz
pF
I
E
=0; V
CB
= -10V,
f = 1.0MHz
C
obo
TYPICAL CHARACTERISTICS
@
T
a
=25
℃
unless otherwise specified
mail:lge@lgesemi.com
Revision:201
70701
-P1
