LGE-MMBT5551
| Part # | LGE-MMBT5551 |
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MMBT5551
NPN General Purpose Transistor
1. BASE
2. EMITTER
3. COLLECTOR
FEATURES
A
SOT-23
Min
Dim
A
Max
3.10
1.50
z
Epitaxial planar die construction.
2.70
E
B
1.10
K
B
z
Complementary PNP type available
(MMBT5401).
C
D
E
1.0 Typical
0.4 Typical
0.35
0.48
2.00
0.1
J
D
G
H
J
1.80
0.02
z
Also available in lead free version.
G
0.1 Typical
H
K
2.20
2.60
C
All Dimensions in mm
APPLICATIONS
z
Ideal for medium power amplification and switching.
ORDERING INFORMATION
Type No.
Marking
G1
Package Code
SOT-23
MMBT5551
MAXIMUM RATING
@
T
a
=25
℃
unless otherwise specified
Symbol
Parameter
Value
UNIT
V
CBO
collector-base voltage
180
V
V
CEO
V
EBO
I
C
collector-emitter voltage
160
V
emitter-base voltage
6
V
collector current (DC)
0.6
A
P
C
Collector dissipation
0.35
W
R
θ
JA
T
j
,T
stg
Thermal resistance,Junction to ambient
junction and storage temperature
357
°C/W
°C
-55 to +150
mail:lge@lgesemi.com
Revision:201
70701
-P1
MMBT5551
NPN General Purpose Transistor
ELECTRICAL CHARACTERISTICS
@
T
a
=25
℃
unless otherwise specified
Symbol
Parameter
Test conditions
MIN. MAX. UNIT
V
(BR)CBO
Collector-base breakdown voltage
I
C
=100
μ
A,I
E
=0
180
V
(BR)CEO
V
(BR)EBO
I
CBO
Collector-emitter breakdown voltage
I
C
=0.1mA,I
B
=0
160
6
Emitter-base breakdown voltage
collector cut-off current
I
E
=10
μ
A,I
C
=0
I
E
= 0; V
CB
= 120V
I
C
= 0; V
EB
= 4V
–
–
50
50
nA
nA
I
EBO
emitter cut-off current
V
CE
= 5V; I
C
= 1mA
80
100
30
–
300
–
h
FE
DC current gain
V
CE
= 5V;I
C
= 10mA
V
CE
= 5V;I
C
= 50mA
I
C
= 10mA; I
B
=1mA
I
C
= 50mA; I
B
= 5mA
I
C
=10mA; I
B
=1mA
I
C
=50mA; I
B
=5mA
I
C
=10mA; V
CB
=10V;
f=100MHz
0.15
0.2
1
V
CE(sat)
V
BE(sat)
f
T
collector-emitter saturation voltage
base-emitter saturation voltage
transition frequency
–
–
V
V
1
100
300
6.0
MHz
pF
I
E
=10mA; V
CE
=10V;
f=1.0MHz
C
obo
Output capacitance
TYPICAL CHARACTERISTICS
@
T
a
=25
℃
unless otherwise specified
mail:lge@lgesemi.com
Revision:201
70701
-P1
