LGE-MMDT3904

Part #LGE-MMDT3904
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LGE-MMDT3904
MMDT3904  
Dual NPN Small Signal Surface Mount Transistor  
FEATURES  
z
Epitaxial planar die construction.  
Ideal for low power amplification and  
switching.  
z
z
z
Ultra-small surface mount package  
Also available in lead free version.  
APPLICATIONS  
z
General switching and amplification  
SOT-363  
ORDERING INFORMATION  
Type No.  
Marking  
K6N  
Package Code  
SOT-363  
MMDT3904  
MAXIMUM RATING
@
T
a
=25
℃
unless otherwise specified  
SYMBOL PARAMETER  
VALUE  
UNIT  
V

CBO  

V

CEO  

V

EBO  

I

C  

collector-base voltage  
60  
40  
6
V
V
V
A
W
collector-emitter voltage  
emitter-base voltage  
collector current -continuous  
total power dissipation  
0.2  
0.2  
P

tot  

Thermal Resistance, Junction to Ambient  
storage temperature  
R

θ
JA  

T

stg  

625  
150  
℃/
W  
°C  
T

j  

junction temperature  
-55 to +150  
°C  
ht
t
p
:
//

.c
o
m  
mail:lge@lgesemi.com  
Revision:201
70701
-P1  

MMDT3904  
ELECTRICAL CHARACTERISTICS
@ Ta=25
℃
unless otherwise specified  
SYMBOL PARAMETER  
CONDITIONS  
I

C

=10
μ
A,I

E

=0  
MIN. MAX. UNIT  
V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CEX  

Collector-base breakdown voltage  
60  
40  
5
V
Collector-emitter breakdown voltage
 
I

C

=1mA,I

B

=0  
V
Emitter-base breakdown voltage  
collector cut-off current  
Base cut-off current  
I

E

=10
μ
A,I

C

=0  
V
V

CE

=30V,V

EB(OFF)

=3.0V  
V

CE

=30V,V

EB(OFF)

=3.0V  
V

CE

=1V,I

C

= 0.1mA  
V

CE

=1V,I

C

=1mA  
–
50  
50  
–
nA  
nA  
I

BL  

–
40  
70  
100  
60  
30  
–
–
h

FE  

DC current gain  
V

CE

=1V,I

C

=10mA  
V

CE

=1V,I

C

=50mA  
V

CE

=1V,I

C

=100mA  
I

C

=10mA,I

B

=1mA  
I

C

=50mA,I

B

=5mA  
I

C

=10mA,I

B

=1mA  
I

C

=50mA, I

B

=5mA  
I

E

=0, V

CB

=5V, f =1MHz  
I

C

=0, V

EB

=0.5V, f =1MHz  
300  
–
–
200  
300  
850  
950  
4
mV  
mV  
mV  
mV  
pF  
V

CE(sat)  

V

BE(sat)  

collector-emitter saturation voltage  
base-emitter saturation voltage  
–
650  
–
C

obo  

C

ibo  

f

T  

Output capacitance  
Input capacitance  
transition frequency  
–
–
8
pF  
I

C

=10mA,V

CE

=20V,f=100MHz 300  
–
MHz  
I

C

=0.1mA,V

CE

=5V,R

S

=1k
Ω
,  
NF  
noise figure  
–
5
dB  
f = 1kHz  
t

d  

t

r  

delay time  
rise time  
V

CC

=3V,V

BE(off)

=-0.5V  
I

C

=10mA I

B1

=1mA  
V

CC

=3V,I

C

=10mA  
I

B1

=I

B2

=1mA  
–
–
–
–
35  
35  
ns  
ns  
ns  
ns  
t

s  

t

f  

storage time  
fall time  
200  
50  
TYPICAL CHARACTERISTICS
@
T
a
=25
℃
unless otherwise specified  
ht
t
p
:
//

.c
o
m  
mail:lge@lgesemi.com  
Revision:201
70701
-P1  

MMDT3904  
ht
t
p
:
//

.c
o
m  
mail:lge@lgesemi.com  
Revision:201
70701
-P1  

MMDT3904  
PACKAGE OUTLINE  
Plastic surface mounted package  
SOT-363  
A
SOT-363  
Min  
Dim  
A
Max  
2.20  
1.35  
E
2.00  
B
1.15  
K
B
C
D
E
0.95 Typical  
0.25 Typical  
0.25  
0.40  
0.70  
0.10  
D
J
G
H
J
0.60  
0.02  
G
H
0.10 Typical  
C
K
2.2  
2.4  
All Dimensions in mm  
SOLDERING FOOTPRINT  
0.50  
1.90  
Unit : mm  
PACKAGE INFORMATION  
Device  
Package  
SOT-363  
Shipping  
MMDT3904  
3000/
T
a
pe&Reel  
ht
t
p
:
//

.c
o
m  
mail:lge@lgesemi.com  
Revision:201
70701
-P1