LGE-S8050-JSY
| Part # | LGE-S8050-JSY |
Download  | LGE-S8050-JSY |
S8050
Silicon Epitaxial Planar Transistor
FEATURES
A
SOT-23
Min
z
z
z
z
High Collector Current.(I
C
= 500mA).
Complementary To S8550.
Excellent H
Linearity.
Dim
A
Max
3.10
1.50
2.70
E
B
1.10
K
B
C
D
E
1.0 Typical
0.4 Typical
FE
High total power dissipation.(P
C
=300mW).
0.35
0.48
2.00
0.1
J
D
G
H
J
1.80
0.02
G
0.1 Typical
H
APPLICATIONS
K
2.20
2.60
C
All Dimensions in mm
z
High Collector Current..
ORDERING INFORMATION
Type No.
S8050
Marking
J3Y
Package Code
SOT-23
MAXIMUM RATING
@
T
a
=25
℃
unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Units
Collector-Base Voltage
40
V
Collector-Emitter Voltage
Emitter-Base Voltage
25
V
5
V
Collector Current -Continuous
Collector Dissipation
500
mA
mW
℃
P
C
300
Junction and Storage Temperature
T
j,
T
stg
-55 to +150
mail:lge@lgesemi.com
Revision:201
70701
-P1
S8050
Silicon Epitaxial Planar Transistor
ELECTRICAL CHARACTERISTICS
@
T
a
=25
℃
unless otherwise specified
Parameter
Symbol
Test conditions
I
C
=100
μ
A,I
E
=0
I
C
=0.1mA,I
B
=0
I
E
=100
μ
A,I
C
=0
V
CB
=40V,I
E
=0
V
CE
=20V,I
B
=0
V
EB
=5V,I
C
=0
MIN
40
25
5
TYP MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
V
V
V
Collector-emitter breakdown voltage
V
(BR)CEO
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V
(BR)EBO
I
CBO
0.1
0.1
μ
A
μ
A
μ
A
I
CEO
I
EBO
0.1
V
CE
=1V,I
C
=50mA
V
CE
=1V,I
C
=500mA
120
50
350
DC current gain
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
I
C
=500mA, I
B
= 50mA
I
C
=500mA, I
B
= 50mA
0.6
1.2
V
V
V
CE
=6V, I
C
= 20mA
f=30MHz
Transition frequency
f
T
150
MHz
CLASSIFICATION OF h
FE(1)
Rank
L
H
Range
120-200
200-350
mail:lge@lgesemi.com
Revision:201
70701
-P1
