LGE-SS8050
| Part # | LGE-SS8050 |
Download  | LGE-SS8050 |
S
S8050
(
NPN
)
T
O-92 Bipolar Transistors
TO-92
1.
EMITTER
2. BASE
3. COLLECTOR
Features
ꢀ
Power dissipation
P
CM
: 1 W
(T
A
=25
℃
)
: 2 W
(T
C
=25
℃
)
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
40
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Junction
T
e
mperature
Storage
T
e
mperature
25
V
Dimensions in inches and (millimeters)
5
V
1.5
A
T
j
150
-55-150
℃
℃
T
stg
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
40
25
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=100uA, I
E
=0
V
(BR)CEO
I
C
=0.1mA, I
B
=0
V
(BR)EBO
I
E
=100
μ
A, I
C
=0
V
V
I
CBO
I
CEO
V
CB
=40
V
,
I
E
=0
0.1
0.1
0.1
400
μ
A
μ
A
μ
A
Emitter cut-off current
V
CE
=20
V
,
I
E
=0
Emitter cut-off current
I
EBO
V
EB
=5
V
,
I
C
=0
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
V
CE
=1
V
,
I
C
=100mA
V
CE
=1
V
,
I
C
=800mA
I
C
=800mA, I
B
=80mA
I
C
=800mA, I
B
=80mA
V
CE
=1
V
,
I
C
=10mA
V
CE
=10
V
,
I
C
=50mA,f=30MH
Z
85
40
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
0.5
1.2
1
V
V
V
Transition frequency
f
T
100
MHz
CLASSIFICATION OF h
FE(1)
Rank
B
C
D
D3
Range
85-160
120-200
160-300
300-400
Revision:201
70701
-P1
mail:lge@lgesemi.com
