Littelfuse-2N6404G
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2N6400 Series
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half
−
wave silicon gate
−
controlled, solid
−
state devices are needed.
Features
SCRs
16 AMPERES RMS
50 thru 800 VOLTS
•
Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
•
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•
Blocking
V
o
ltage to 800 V
G
A
K
•
These are Pb
−
Free Devices
MAXIMUM RATINGS
*
(T =
25
°
C unless otherwise noted)
J
MARKING
DIAGRAM
Rating
Symbol
Value
Unit
J
V
V
V
DRM,
4
(T =
*
40 to 125
°
C, Sine Wave 50 to 60
RRM
Hz; Gate Open)
2N6400
50
100
200
400
600
800
2N6401
TO
−
220AB
CASE 221A
STYLE 3
2N640xG
AYWW
2N6402
2N6403
2N6404
2N6405
1
On-State Current RMS (180
°
Conduction
I
16
A
A
A
T(RMS)
Angles; T
= 100
°
C)
2
C
3
Average On-State Current (180
°
Conduc-
I
T(AV)
10
tion Angles; T
= 100
°
C)
C
x
= 0, 1, 2, 3, 4 or 5
Peak Non-repetitive Surge Current (1/2
I
160
TSM
A
Y
WW
G
= Assembly Location
=
Y
e
ar
= Work Week
Cycle, Sine Wave 60 Hz, T
= 25
°
C)
J
2
2
Circuit Fusing Considerations (t = 8.3 ms)
I t
145
20
A s
= Pb
−
Free Package
Forward Peak Gate Power (Pulse Width
≤
P
W
W
A
GM
1.0
m
s, T
= 100
°
C)
C
Forward Average Gate Power (t = 8.3 ms,
P
0.5
2.0
G(AV)
PIN ASSIGNMENT
Cathode
T
C
= 100
°
C)
1
2
3
4
Forward Peak Gate Current (Pulse Width
≤
I
GM
Anode
1.0
m
s, T
= 100
°
C)
C
Gate
Operating Junction
T
e
mperature Range
Storage
T
e
mperature Range
T
J
−
40 to
+125
°
C
°
C
Anode
T
stg
−
40 to
+150
ORDERING INFORMATION
See detailed ordering and shipping information in the package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
and V
for all types can be applied on a continuous basis. Ratings
DRM
RRM
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
©
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
November, 2012
−
Rev. 6
2N6400/D
2N6400 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction
−
to
−
Case
Symbol
Max
1.5
Unit
°
C/W
°
C
R
q
JC
Maximum Lead
T
e
mperature for Soldering Purposes 1/8 in from Case for 10 Seconds
T
L
260
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted.)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
*
P
eak Repetitive Forward or Reverse Blocking Current
I
,
DRM
(V =
Rated V
or V
, Gate Open)
T =
25
°
C
T =
125
°
C
J
I
−
−
−
−
10
2.0
m
A
mA
AK
DRM
RRM
J
RRM
ON CHARACTERISTICS
*
P
eak Forward On
−
State Voltage (I
= 32 A Peak, Pulse Width
≤
1 ms, Duty Cycle
≤
2%)
V
TM
−
−
1.7
V
TM
*
G
ate Trigger Current (Continuous dc)
T
C
T
C
= 25
°
C
=
−
40
°
C
I
−
−
9.0
−
30
60
mA
GT
(V =
12 Vdc, R
= 100
W
)
D
L
*
G
ate Trigger Voltage (Continuous dc)
V
GT
V
(V =
12 Vdc, R
= 100
W
)
T
C
T
C
= 25
°
C
=
−
40
°
C
−
−
0.7
−
1.5
2.5
D
L
Gate Non
−
Trigger Voltage (V
= 12 Vdc, R
= 100
W
), T
= +125
°
C
V
GD
0.2
−
−
V
D
L
C
*
H
olding Current
T
= 25
°
C
I
H
−
18
40
mA
C
(V =
12 Vdc, Initiating Current = 200 mA, Gate Open)
D
*T =
−
40
°
C
−
−
−
60
C
Turn-On Time (I
= 16 A, I
= 40 mAdc, V
= Rated V
)
t
gt
1.0
−
m
s
m
s
TM
GT
D
DRM
Turn-Off Time (I
= 16 A, I
= 16 A, V
= Rated V
)
t
q
TM
R
D
DRM
T
= 25
°
C
−
−
15
35
−
−
C
T =
+125
°
C
J
DYNAMIC CHARACTERISTICS
Critical Rate
−
of
−
Rise of Off-State Voltage (V
= Rated V
, Exponential Waveform)
dv/dt
−
50
−
V/
m
s
D
DRM
T =
+125
°
C
J
*Indicates JEDEC Registered Data.
2
2N6400 Series
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
Symbol
Parameter
V
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
DRM
DRM
on state
I
I
H
I
at V
RRM
RRM
V
RRM
RRM
I
V
TM
+ Voltage
I
H
Holding Current
I
at V
DRM
Reverse Blocking Region
(off state)
DRM
Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode
−
16
14
128
124
120
116
112
108
180
°
dc
120
°
T
≈
125
°
C
J
90
°
α
12
10
α
= CONDUCTION ANGLE
60
°
α
= 30
°
8.0
6.0
dc
4.0
α
104
100
180
°
2.0
0
α
= 30
°
60
°
5.0 6.0 7.0
120
°
90
°
α
= CONDUCTION ANGLE
5.0 6.0 7.0 8.0 9.0 10
, AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
0
1.0 2.0
3.0 4.0
8.0 9.0
10
0
1.0
2.0
3.0 4.0
I
, AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
I
T(AV)
T(AV)
Figure 1. Average Current Derating
Figure 2. Maximum On
−
State Power Dissipation
3
2N6400 Series
200
100
70
50
30
20
T =
25
°
C
J
10
7.0
5.0
125
°
C
160
150
3.0
2.0
1 CYCLE
140
130
120
1.0
0.7
0.5
T =
125
°
C
J
f = 60 Hz
0.3
0.2
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
110
1.0
2.0
3.0
4.0
6.0
8.0 10
0.4 0.8
1.2
1.6
2.0
2.4 2.8
3.2
3.6
4.0
4.4
v
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
NUMBER OF CYCLES
TM
Figure 3. On
−
State Characteristics
Figure 4. Maximum Non
−
Repetitive Surge Current
1.0
0.7
0.5
0.3
0.2
Z
= R
JC
•
r(t)
q
q
JC(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200 300
500
1.0 k
2.0 k
3.0 k
5.0 k
10 k
t, TIME (ms)
Figure 5. Thermal Response
4
2N6400 Series
TYPICAL CHARACTERISTICS
100
100
70
OFF‐STATE VOLTAGE = 12 V
R =
50
W
L
50
30
20
T =
-40
°
C
J
10
10
7.0
5.0
25
°
C
3.0
2.0
125
°
C
1.0
1
-40 -25
-10
0.2
0.5 1.0
2.0
5.0 10
20
50 100
200
5
20
35
50 65
80 95
110 125
PULSE WIDTH (ms)
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 7. Typical Gate Trigger Current
versus Junction Temperature
Figure 6. Typical Gate Trigger Current
versus Pulse Width
1.0
0.9
0.8
0.7
0.6
0.5
0.4
100
10
1
0.3
0.2
-40 -25
-10
5
20
35 50
65 80
95 110
125
-40 -25
-10
5
20
35 50
65 80
95 110
125
T , JUNCTION TEMPERATURE (
°
C)
J
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 8. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 9. Typical Holding Current
versus Junction Temperature
5
2N6400 Series
ORDERING INFORMATION
†
Device
Package
Shipping
2N6400G
TO
−
220AB
(Pb
−
Free)
2N6401G
2N6402G
2N6403G
2N6403TG
2N6404G
2N6405G
TO
−
220AB
(Pb
−
Free)
500 Units / Box
TO
−
220AB
(Pb
−
Free)
TO
−
220AB
(Pb
−
Free)
TO
−
220AB
(Pb
−
Free)
50 Units / Rail
500 Units / Box
TO
−
220AB
(Pb
−
Free)
TO
−
220AB
(Pb
−
Free)
6
2N6400 Series
PACKAGE DIMENSIONS
TO
−
220
CASE 221A
−
07
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−
T
−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION
Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
DIM MIN
MAX
0.620 14.48
MILLIMETERS
MIN
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
—
4
3
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
—
Q
A
K
0.405
0.190
0.035
0.147
0.105
0.155
0.022
9.66
4.07
0.64
3.61
2.42
2.80
0.36
1
2
U
H
G
H
J
Z
K
L
0.562 12.70
0.060
0.210
0.120
0.110
0.055
0.255
0.050
—
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
—
N
Q
R
S
T
R
J
L
V
G
U
V
Z
D
0.080
2.04
N
STYLE 3:
PIN 1.
CATHODE
2. ANODE
3. GATE
4. ANODE
ON Semiconductor
and
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−
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. SCILLC
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limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
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does not convey any license under its patent rights nor the rights of others.
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T
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2N6400/D
