Littelfuse-2N6509G
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2N6504 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half‐wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
Features
•
ăGlass Passivated Junctions with Center Gate Fire for Greater
Parameter Uniformity and Stability
SCRs
25 AMPERES RMS
50 thru 800 VOLTS
•
ăSmall, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
•
ăBlocking
V
o
ltage to 800
V
o
lts
•
ă300 A Surge Current Capability
•
ăPb-Free Packages are Available*
G
A
K
MARKING
DIAGRAM
4
2N650xG
AYWW
TO-220AB
CASE 221A
STYLE 3
1
2
3
x
= 4, 5, 7, 8 or 9
= Assembly Location
=
Y
e
ar
A
Y
WW = Work Week
= Pb-Free
Device
G
PIN ASSIGNMENT
Cathode
1
2
3
4
Anode
Gate
Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
ꢀ Semiconductor Components Industries, LLC, 2008
April, 2006 – Rev. 8
1
Publication Order Number:
2N6504/D
2N6504 Series
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Rating
Symbol
Value
Unit
V
DRM,
V
RRM
V
(Gate Open, Sine Wave 50 to 60 Hz, T
= 25 to 125
°
C)
J
2N6504
2N6505
2N6507
2N6508
2N6509
50
100
400
600
800
On‐State Current RMS (180
°
Conduction Angles; T
= 85
°
C)
I
25
A
A
C
T(RMS)
Average On‐State Current (180
°
Conduction Angles; T
= 85
°
C)
I
16
250
C
T(AV)
Peak Non‐repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, T
= 100
°
C)
I
A
J
TSM
Forward Peak Gate Power (Pulse Width
≤
1.0
m
s, T
= 85
°
C)
P
20
W
W
A
C
GM
Forward Average Gate Power (t = 8.3 ms, T
= 85
°
C)
P
G(AV)
0.5
C
Forward Peak Gate Current (Pulse Width
≤
1.0
m
s, T
= 85
°
C)
I
2.0
C
GM
Operating Junction
T
e
mperature Range
Storage
T
e
mperature Range
T
-40 to +125
-40 to +150
°
C
°
C
J
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
and V
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
DRM
RRM
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction-to-Case
Symbol
Max
1.5
Unit
°
C/W
°
C
R
q
JC
*Maximum Lead
T
e
mperature for Soldering Purposes 1/8 in from Case for 10 Seconds
T
L
260
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted.)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
*āPeak Repetitive Forward or Reverse Blocking Current
or V
I
,
DRM
I
RRM
(V =
Rated V
AK
, Gate Open)
T =
25
°
C
T =
125
°
C
J
–
–
–
–
10
2.0
m
A
mA
DRM
RRM
J
ON CHARACTERISTICS
TM
V
I
–
–
1.8
V
TM
*āGate Trigger Current (Continuous dc)
T
T
= 25
°
C
= -40
°
C
–
–
9.0
–
30
75
mA
C
GT
(V =
12 Vdc, R
= 100
W
)
AK L
C
*āGate Trigger Voltage (Continuous dc) (V
= 12 Vdc, R
= 100
W
, T
= -40
°
C)
V
–
1.0
–
1.5
–
V
V
AK
L
C
GT
āGate Non‐Trigger Voltage (V
= 12 Vdc, R
= 100
W
, T
= 125
°
C)
V
GD
0.2
AK
L
J
*āHolding Current
T
= 25
°
C
I
H
–
–
18
–
40
80
mA
C
(V =
12 Vdc, Initiating Current = 200 mA, Gate Open) T
= -40
°
C
AK
C
*āTurn‐On Time (I
= 25 A, I
= 50 mAdc)
TM GT
t
–
1.5
2.0
m
s
m
s
gt
āTurn‐Off Time (V
= rated voltage)
t
q
DRM
(I =
25 A, I
= 25 A)
–
–
15
35
–
–
TM
R
(I =
25 A, I
= 25 A, T
= 125
°
C)
TM
R
J
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off‐State Voltage (Gate Open, Rated V
, Exponential Waveform)
DRM
dv/dt
–
50
–
V/
m
s
*Indicates JEDEC Registered Data.
2. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2%.
2
2N6504 Series
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
Symbol
Parameter
V
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
DRM
DRM
on state
I
I
H
I
at V
RRM
RRM
V
RRM
RRM
I
V
TM
+ Voltage
I
H
Holding Current
I
at V
DRM
Reverse Blocking Region
(off state)
DRM
Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –
13
0
32
180
°
12
0
α
α
24
90
°
α
= CONDUCTION ANGLE
α
= CONDUCTION ANGLE
dc
60
°
110
α
= 30
°
16
10
0
T =
125
°
C
J
60
°
90
°
180
°
dc
α
= 30
°
8.0
0
90
80
0
4.0
8.0
12
16
20
0
4.0
8.0
12
16
20
I ,
ON‐STATE FORWARD CURRENT (AMPS)
T(AV)
I ,
AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
T(AV)
Figure 1. Average Current Derating
Figure 2. Maximum On-State Power Dissipation
3
2N6504 Series
100
70
50
30
20
125
°
C
25
°
C
10
7.0
5.0
3.0
2.0
300
275
250
225
1 CYCLE
1.0
0.7
0.5
0.3
0.2
T
= 85
°
C
f = 60 Hz
C
200
175
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
0.1
1.0
2.0
3.0
4.0
6.0
8.0 10
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
v , INSTANTANEOUS VOLTAGE (VOLTS)
F
NUMBER OF CYCLES
Figure 3. Typical On-State Characteristics
Figure 4. Maximum Non-Repetitive Surge Current
1.0
0.7
0.5
0.3
0.2
Z
= R
JC
•
r(t)
q
q
JC(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200 300
500
1.0 k
2.0 k 3.0 k
5.0 k
10 k
t, TIME (ms)
Figure 5. Thermal Response
4
2N6504 Series
TYPICAL TRIGGER CHARACTERISTICS
100
10
1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40 -25
-10
5
20
35
50 65
80 95
110 125
-40 -25
-10
5
20
35 50
65 80
95 110
125
T , JUNCTION TEMPERATURE (
°
C)
J
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 6. Typical Gate Trigger Current
versus Junction Temperature
Figure 7. Typical Gate Trigger Voltage
versus Junction Temperature
100
10
1
-40 -25
-10
5
20
35 50
65 80
95 110
125
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 8. Typical Holding Current
versus Junction Temperature
5
2N6504 Series
ORDERING INFORMATION
Device
Package
Shipping
2N6504
TO-220AB
2N6504G
TO-220AB
(Pb-Free)
500 Units / Box
2N6505
TO-220AB
2N6505G
TO-220AB
(Pb-Free)
2N6505T
TO-220AB
50 Units / Rail
500 Units / Box
50 Units / Rail
2N6505TG
TO-220AB
(Pb-Free)
2N6507
TO-220AB
2N6507G
TO-220AB
(Pb-Free)
2N6507T
TO-220AB
2N6507TG
TO-220AB
(Pb-Free)
2N6508
TO-220AB
500 Units / Box
50 Units / Rail
500 Units / Box
2N6508G
TO-220AB
(Pb-Free)
2N6508TG
TO-220AB
(Pb-Free)
2N6509
TO-220AB
2N6509G
TO-220AB
(Pb-Free)
2N6509T
TO-220AB
50 Units / Rail
2N6509TG
TO-220AB
(Pb-Free)
6
2N6504 Series
PACKAGE DIMENSIONS
TO-220AB
CASE 221A-07
ISSUE AA
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
-T-
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION
Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
DIM MIN
MAX
0.620 14.48
MILLIMETERS
MIN
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
—
4
3
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
—
Q
A
K
0.405
0.190
0.035
0.147
0.105
0.155
0.022
9.66
4.07
0.64
3.61
2.42
2.80
0.36
1
2
U
H
G
H
J
Z
K
L
0.562 12.70
0.060
0.210
0.120
0.110
0.055
0.255
0.050
—
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
—
N
Q
R
S
T
R
L
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 3:
PIN 1.
CATHODE
2. ANODE
3. GATE
4. ANODE
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
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to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.
All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
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T
:
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o
ll Free
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o
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For additional information, please contact your local
Sales Representative
2N6504/D
