Littelfuse-BTA08-800CW3G
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Thyristors
Surface Mount – 800V
> BTA08-800CW3G
Pb
BTA08-800CW3G
Description
Designed primarily for half-wave ac control applications,
such as motor controls, heating controls and power supply
crowbar circuits.
Features
• Blocking
Voltage to 800 V
• On-State
Current Rating of 8 A RMS at 25°C
• Uniform
Gat
e
T
r
igger Currents i
n
T
hree Quadrants
• High
Immunity to dV/dt − 1500 V/µs minimum at 125°C
• Minimizes
Snubber Networks for Protection
• Industry
Standar
d
T
O-220AB Package
• High
Commutating dI/dt −
1
.
5 A/ms minimum at 125°C
Pin Out
• Internally
Isolated (2500 V
RMS
)
• These
are Pb−Free Devices
Functional Diagram
MT2
MT1
G
CASE 221A
STYLE 4
1
2
Additional Information
Samples
Datasheet
Resources
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 800V
> BTA08-800CW3G
Maximum Ratings
(T
J
= 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
V
Peak Repetitive Off-State Voltage (Note 1)
V
DRM
,
V
RRM
(Gate Open, Sine Wave 50 to 60 Hz, T
J
= -40° to 125°C)
BTA08−800CW3G
800
8.0
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
C
= 80°C)
I
T
A
A
(RMS)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, T
C
= 25°C)
I
TSM
90
36
Circuit Fusing Consideration (t = 8.3 ms)
I
2
t
A²sec
V
Non−Repetitive Surge Peak Off−State Voltage (T
J
= 25°C, t = 10ms)
V
DSM
/ V
RSM
V
DSM
/ V
RSM
+100
Peak Gate Current (T
J
= 125°C, t = 20ms)
I
GM
P
G(AV)
P
G(AV)
T
J
4.0
20
W
W
W
°C
°C
V
Peak Gate Power
(Pulse Width ≤
1
.
0 µs, T
C
= 80°C)
Average Gate Power (T
J
= 125°C)
1
.
0
Operating Junctio
n
T
e
mperature Range
Storag
e
T
e
mperature Range
-40 to +125
-40 to +125
2500
T
stg
V
iso
RMS Isolation Voltage
(t = 300 ms, R.H. ≤ 30%, T
A
= 25°C)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.
V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Symbol
Value
Unit
R
8JC
Thermal Resistance,
Junction−to−Case (AC)
2.5
60
°C/W
Junction−to−Ambient
R
8JA
T
L
Maximum Lea
d
T
e
mperature for Soldering Purposes, 1/8” from case for
10 seconds
260
°C
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 800V
> BTA08-800CW3G
Electrical Characteristics
–
OFF
(T
J
= 25°C unless otherwise noted ; Electricals apply in both directions)
Characteristic
Symbol
Min
T
y
p
Max
Unit
Peak Repetitive Blocking Current
(V
D
= V
DRM
= V
RRM
; Gate Open)
T
J
= 25°C
–
–
0.005
I
DRM
,
mA
I
RRM
–
–
2.0
T
J
= 125°C
Electrical Characteristics
–
ON
(T
J
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Forward On-State Voltage (Note 2) (I
TM
Symbol
Min
T
y
p
Max
Unit
=
11 A Peak)
V
TM
−
−
1
.
55
V
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
2.5
2.5
2.5
−
−
−
35
35
35
Gat
e
T
r
igger Current (Continuous dc)
(V
D
= 12 V,
R
L
= 30 Ω)
I
GT
mA
Holding Current
(V
D
= 12 V,
G
ate Open, Initiating Current =
100 mA)
IH
−
−
35
mA
mA
MT2(+), G(+)
MT2(+), G(−)
−
−
−
−
50
60
Latching Current (V
D
= 24
V
,
I
G
= 42 mA)
IL
V
GT
t
gt
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
−
−
−
−
−
50
1
.
7
1
.
1
1
.
1
0.5
0.5
0.5
Gat
e
T
r
igger Voltage (V
D
= 12 V,
R
L
= 30 Ω)
V
V
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
0.2
0.2
0.2
−
−
−
−
−
−
Gate Non−
T
r
igger Voltage (T
J
= 125°C)
2. Indicates Puls
e
T
e
st: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 800V
> BTA08-800CW3G
Dynamic Characteristics
Characteristic
Symbol
Min
T
y
p
Max
Unit
Rate of Change of Commutating Current, See Figure 10.
(Gate Open
,
T
J
= 125°C, No Snubber)
(dI/dt)c
1
.
5
−
−
A/ms
Critical Rate of Rise of On−State Current
(T
J
= 125°C, f = 120 Hz, I
G
= 2 x I
GT
, tr ≤100 ns)
dI/dt
−
−
−
50
−
A/µs
V/µs
Critical Rate of Rise of Off-State Voltage
(V
D
= 0.66 x V
DRM
, Exponential Waveform, Gate Open, T
J
= 125°C)
dV/dt
1500
V
o
ltage Current Characteristic of SCR
Symbol
V
DRM
I
DRM
Parameter
+C urrent
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 1
MainT
e
r
minal 2 +
V
TM
on state
I
H
I
at V
RRM
RRM
V
RRM
I
RRM
+V oltage
DRM
off state
I
I
at V
H
DRM
V
TM
Quadrant 3
MainT
e
r
minal 2
V
TM
I
H
Quadrant Definitions for
a
T
r
iac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(
) I
GT
(+) I
GT
GATE
GATE
MT1
MT1
REF
REF
I
+I
GT
GT
(
) MT2
(
) MT2
Quadrant III
Quadrant IV
(+) I
(
) I
GT
GT
GATE
GATE
MT1
REF
MT1
REF
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in phase signals (using standard AC lines) quadrants I and III are use
d
.
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 800V
> BTA08-800CW3G
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
125
120
115
12
10
8
DC
180
°
120
°
= 120, 90, 60, 30
°
6
= 180
°
110
105
100
60
°
4
DC
90
°
= 30
°
2
0
I ,
RMS ON-ST
A
T
E CURRENT (A)
T(RMS)
I ,
ON-ST
A
T
E CURRENT (A)
T(RMS)
Figure 3. On−State Characteristics
Figure 4
.
T
hermal Response
1
0.1
0.01
4
0.1
1
10
100
1000
1· 10
t, TIME (ms)
Figure 5. Hold Curren
t
V
a
riation
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 800V
> BTA08-800CW3G
Figure 6. Gat
e
T
r
igger Curren
t
V
a
riation
Figure
7
.
G
at
e
T
r
igge
r
V
o
ltag
e
V
a
riation
Figure 8. Critical Rate of Rise of Off-Stat
e
V
o
ltage
(Exponentia
l
W
aveform)
Figure 10. Latching Curren
t
V
a
riation
5000
V
D
= 800 Vpk
T =
125°C
J
4K
3K
2K
1K
0
10
100
1000
10000
R ,
GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
G
Figure 9. Simplifie
d
T
e
st Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 800V
> BTA08-800CW3G
Dimensions
Part Marking System
4
SEATING
PLANE
B
F
C
T
S
4
3
Q
A
K
BTA08 xCWG
AYWW
12
U
TO 220AB
CASE 221A
STYLE 12
H
1
2
3
Z
x=
A=
Y=
WW
G=
6 or 8
Assembly Location
Y
e
ar
= Work Week
Pb Free
Package
R
L
V
G
J
D
N
Pin Assignment
1
Mai
n
T
e
rminal 1
Inches
Millimeters
Dim
2
3
4
Mai
n
T
e
rminal 2
Gate
Min
Max
Min
Max
A
B
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
−−−
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.060
0.210
0.120
0.
1
10
0.055
0.255
0.050
−−−
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1
.
15
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1
.
52
No Connection
C
D
Ordering Information
F
G
H
J
Device
Package
Shipping
TO-220AB
BTA08−800CW3G
50 Units / Rail
K
L
N
Q
R
S
T
4.83
2.54
2.04
1
.
15
5.33
3.04
2.79
1
.
39
5.97
0.00
1
.
15
6.47
1
.
27
U
V
Z
−−−
2.04
0.080
−−−
1.
D
IMENSIONING
AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND
LEAD IRREGULARITIES ARE ALLOWED.
Disclaimer Notice
–
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
