Littelfuse-CLA50E1200HB
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CLA50E1200HB
=
V
RRM
I
TAV
V
T
120
0
V
5
0
A
High Efficiency Thyristor
=
=
1.2
7
V
Single Thyristor
Part number
CLA50E1200HB
Backside: anode
2
1
3
TO-247
Features / Advantages:
Applications:
Package:
●
Thyristor for line frequency
●
Planar passivated chip
●
Long-term stability
●
Line rectifying 50/60 Hz
●
Softstart AC motor control
●
DC Motor control
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
●
Power converter
●
AC power control
●
Lighting and temperature control
Terms and Conditions of Usage
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
– to perform joint risk and quality assessments;
– the conclusion of quality agreements;
– to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827h
© 2015
IXYS all rights reserved
CLA50E1200HB
Ratings
Thyristor
Symbol
V
RSM/DSM
Definition
Conditions
min. typ. max. Unit
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
1300
1200
50
V
V
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
V
RRM/DRM
I
R/D
V
R/D
=
1
200 V
V
R/D
=
1
200 V
I
T
= 50
A
I
T
= 100
A
I
T
= 50
A
I
T
= 100
A
T
C
= 125°C
180° sine
µA
mA
V
reverse current, drain current
4
forward voltage drop
1.32
1.60
1.27
1.65
50
V
T
V
T
VJ
=
°C
V
125
V
average forward current
RMS forward current
T
VJ
= 150°C
T
VJ
= 150°C
A
I
TAV
I
T(RMS)
V
T0
79
A
0.88
V
threshold voltage
for power loss calculation only
slope resistance
7.7 m
Ω
0.25 K/W
K/W
r
T
R
thJC
R
thCH
P
tot
thermal resistance junction to case
thermal resistance case to heatsink
0.25
T
C
= 25°C
T
VJ
= 45°C
V
R
= 0 V
500
650
700
555
595
W
A
A
A
A
total power dissipation
max. forward surge current
t =
10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t =
10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t =
10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t =
10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
V
R
= 40
0
V f
= 1
M
Hz
t
P
= 30
µs
I
TSM
T
VJ
= 150°C
V
R
= 0 V
value for fusing
T
VJ
= 45°C
V
R
= 0 V
I²t
2.12 kA²s
2.04 kA²s
1.54 kA²s
1.48 kA²s
pF
T
VJ
= 150°C
V
R
= 0 V
junction capacitance
T
VJ
= 25°C
T
C
= 150°C
25
C
J
10
5
W
W
W
P
GM
max. gate power dissipation
t
P
= 300
µs
0.5
P
GAV
average gate power dissipation
critical rate of rise of current
T
VJ
= 15
0
°
C; f = 50 Hz
repetitive, I
T
= 150
A
150 A/µs
(di/dt)
cr
0.3
t
P
= 200
µs
;
d
i
G
/dt =
A/µs;
I
G
= 0.
3
A
;
V =
⅔
V
DRM
V =
⅔
V
DRM
non-repet., I
T
= 50
A
T
VJ
= 150°C
500 A/µs
critical rate of rise of voltage
gate trigger voltage
1000 V/µs
(dv/dt)
cr
V
GT
R
GK
=
∞; method 1 (linear voltage rise)
V
D
= 6 V
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 150°C
1.5
1.6
V
V
gate trigger current
V
D
= 6 V
50 mA
80 mA
I
GT
gate non-trigger voltage
gate non-trigger current
latching current
V
D
=
⅔
V
DRM
t
p
= 10
µs
0.2
3
V
V
GD
I
GD
I
L
mA
T
VJ
= 2
5
°
C
125 mA
I
G
=
0.
3
A
; di
G
/dt =
0.3 A/µs
holding current
V
D
= 6 V
R
GK
=
∞
T
VJ
= 2
5
°
C
T
VJ
= 2
5
°
C
100 mA
I
H
gate controlled delay time
V
D
= ½ V
2
µs
µs
t
gd
DRM
I
G
V
R
= 100 V;
I
T
= 50
A; V
=
⅔
V
DRM
T
VJ
=125 °C
di/dt =
10 A/µs
dv/dt =
20 V/µs
µs
=
0.
3
A
; di
G
/dt =
0.3 A/µs
turn-off time
200
t
q
t
p
= 200
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827h
© 2015
IXYS all rights reserved
CLA50E1200HB
Ratings
Package TO-247
Symbol
I
RMS
Definition
Conditions
min. typ. max.
Unit
per terminal
70
150
125
150
A
°C
°C
°C
g
RMS current
-40
-40
-40
T
VJ
virtual junction temperature
T
op
operation temperature
storage temperature
T
stg
6
Weight
0.8
20
1.2 Nm
120
M
D
mounting torque
F
N
mounting force with clip
C
Product Marking
Part description
C = Thyristor
(SCR)
L = High
Efficiency Thyristor
A = (up
to 1200V)
50 = Current
Rating [A]
E = Single
Thyristor
1200 = Reverse
Voltage [V]
HB = TO-247AD
(3)
Logo
IXYS
XXXXXXXXX
Zyyww
Part No.
Assembly Line
abcd
Assembly Code
Date Code
Ordering
Ordering Number
Marking on Product
CLA50E1200HB
Delivery Mode
Quantity Code
No.
30 503748
Standard
CLA50E1200HB
Tube
Similar Part
Package
Voltage class
CLA50E1200TC
TO-268AA (D3Pak) (2)
1200
T
VJ
= 15
0
°
C
Equivalent Circuits for Simulation
* on die level
Thyristor
V
0
I
R
0
threshold voltage
slope resistance *
0.88
5.2
V
V
0 max
R
0 max
m
Ω
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827h
© 2015
IXYS all rights reserved
CLA50E1200HB
Outlines TO-247
A
D2
E
A2
Ø
P1
Ø
P
Sym.
Inches
min. max.
Millimeter
S
Q
min.
4.70
2.21
1.50
max.
A
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.215 BSC
5.30
2.59
2.49
A1
A2
D
D1
D
20.79 21.45
15.48 16.24
2x
E2
E
4
E2
e
4.31
5.48
5.46 BSC
1
2
3
L
0.780 0.800
19.80 20.30
L1
Ø P
Q
–
0.177
–
4.49
3.65
6.19
L1
0.140 0.144
0.212 0.244
0.242 BSC
3.55
5.38
E1
S
6.14 BSC
L
b
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.99
1.65
2.59
0.38
13.07
0.51
13.45
–
1.40
b2
b4
c
2.39
3.43
0.89
–
2x
b2
D1
D2
E1
Ø P1
0.515
–
C
3x
b
0.020 0.053
1.35
–
b4
A1
0.530
–
–
0.29
7.39
2x
e
2
1
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827h
© 2015
IXYS all rights reserved
CLA50E1200HB
Thyristor
150
600
500
400
300
200
100
10000
V
R
= 0 V
50 Hz, 80% V
RRM
120
T
VJ
= 45°C
90
I
2
t
T
VJ
= 45°C
I
T
1000
I
TSM
[A]
T
VJ
= 125°C
[A
2
s]
T
VJ
= 125°C
60
[A]
T
VJ
= 125°C
30
0
T
VJ
= 25°C
100
0.0
0.5
1.0
V
T
[V]
Fig. 1
Forward characteristics
1.5
2.0
2.5
0.01
0.1
1
1
2
3
4
5 6
7 8
9
1
0
t [s]
t [ms]
Fig. 3
I
2
t versus time (1-10 s)
Fig. 2
Surge overload current
I
TSM
: crest value, t: duration
10
1000
100
80
70
60
50
1: I
, T
= 150°C
GD VJ
2: I
, T
GT VJ
=
=
25°C
6
3: I
, T
GT VJ
-40°C
T
VJ
= 125°C
5
4
dc =
1
0.5
0.4
0.33
0.17
0.08
3
2
V
G
t
gd
I
T(AV)M
1
40
30
20
10
0
1
[V]
[A]
[µs]
10
4: P
5: P
6: P
= 0.5 W
GAV
GM
GM
=
1 W
lim.
typ.
=
10 W
0.1
1
10
100
1000
1
10
100
1000 10000
0
40
80
120
160
I
G
[mA]
I
G
[mA]
T
case
[°C]
Fig. 6
Max. forward current at
case temperature
Fig. 5
Gate controlled delay time t
gd
Fig. 4
Gate voltage & gate current
100
80
0.3
R
thHA
0.4
0.6
0.8
1.0
2.0
4.0
dc =
1
0.5
0.4
0.33
0.17
0.08
0.2
P
(AV)
60
[W]
Z
thJC
0.1
[K/W]
i
R
thi
(K/W)
t
i
(s)
40
20
0
1
2
3
4
5
0.0075
0.0170
0.0570
0.1580
0.0105
0.0011
0.0019
0.0115
0.1200
0.5000
0.0
0
20
40
60
0
50
100
150
0.001
0.01
0.1
t [s]
1
10
I
T(AV)
[A]
T
amb
[°C]
Fig. 7
Transient thermal impedance junction to case
Fig. 7a
Power dissipation versus direct output current
Fig. 7b
and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827h
© 2015
IXYS all rights reserved
