Littelfuse-IXBN75N170A
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Advance
T
e
chnical Information
BIMOSFET
TM
Monolithic
Bipolar MOS Transistor
V
CES
= 1700
V
IXBN 75N170A
I
C25
V
CE(sat)
= 6.0
V
t
fi
= 60
ns
= 75
A
Symbol
Tes
t
C
onditions
Maximum Ratings
miniBLOC
,
S
OT-22
7
B
(
IXBN)
E153432
V
CES
V
CGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Ω
1700
1700
V
V
E
V
GES
V
GEM
Continuous
Transient
±
20
±
30
V
V
I
C25
I
C90
I
CM
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
75
42
240
A
A
A
SSOA
V
= 15 V, T
VJ
= 125
°
C, R
G
= 10
Ω
I
CM
=
=
100
A
V
C
G
l
a
E
mped inductive load
V
CES
1350
G = Gate
C = Collector
(RBSOA)
E = Emitter
T
SC
V
= 15 V, V
= 1200V, T
J
= 125
°
C
R
G
G
E
= 10
Ω
n
o
C
n
E
S
repetitive
T
C
= 25
°
C
10
µ
s
Either Source terminal at miniBLOC can be used
(SCSOA)
as Main or Kelvin Emitter
P
C
500
W
T
J
T
JM
T
stg
-55 … +150
150
-55 … +150
°
C
°
C
°
C
Features
M
d
Mounting torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
z
Terminal connection torque (M4)
High Blocking Voltage
Fast switching
High current handling capability
MOS Gate turn-on
– drive
simplicity
z
Weight
30
g
z
z
z
Isolation voltage 2500V
Applications
Symbol
Tes
t
C
onditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
z
AC motor speed control
min. typ.
max.
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
BV
CES
V
GE(th)
I
= 250
µ
A, V
GE
= 0 V
1700
2.5
V
V
I
C
C
= 1500
µ
A, V
CE
= V
GE
5.5
z
Substitutes for high voltage MOSFETs
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T =
25
°
C
T
J
J
= 125
°
C
50
µ
A
Advantages
1.5 mA
z
Lower conduction losses than MOSFETs
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
200
n
A
z
High power density
z
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4.5
5.0
6.0
V
V
Easy to mount with 2 screws
Space saving
z
T
J
= 125
°
C
98938 (7/02)
© 2002 IXYS All rights reserved
IXBN 75N170A
Symbol
g
fs
Tes
t
C
onditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min. typ.
max.
miniBLOC, SOT-227 B
I
C
= I
C90
; V
= 10 V,
30
50
S
Pulse test, t
C
≤
E
300
µ
s, duty cycle
≤
2 %
C
ies
C
oes
C
res
7400
340
90
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Q
g
Q
ge
Q
gc
310
60
110
nC
nC
nC
M4 screws (4x) supplied
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
B
31.50
31.88
1.240
1.255
7.80
8.20
0.307
0.323
t
d(on)
t
ri
t
d(off)
t
fi
35
60
240
60
ns
ns
ns
ns
mJ
Inductive load, T
J
= 25
°
C
C
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
D
I
C
= I
C90
, V
GE
= 15 V
E
F
4.09
4.29
0.161
0.169
V
CE
= 0.8 V
CES
, R
G
= R
off
= 1.0
Ω
14.91
15.11
0.587
0.595
G
30.12
30.30
1.186
1.496
1.193
1.505
Remarks: Switching times may
H
38.00
38.23
increase for V
CE
(Clamp) > 0.8 • V
CES
higher T
J
or increased R
G
,
J
11.68
8.92
12.22
9.60
0.460
0.481
E
off
6.0
K
0.351
0.378
L
0.76
0.84
0.030
0.496
0.033
0.506
M
12.60
12.85
t
d(on)
t
ri
E
on
t
d(off)
t
fi
35
60
10
280
120
ns
ns
mJ
ns
ns
Inductive load, T
J
= 125
°
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 1.0
Ω
N
25.15
25.42
0.990
1.001
O
1.98
2.13
0.078
0.084
P
4.95
5.97
0.195
1.045
0.235
1.059
Q
26.54
26.90
R
3.94
4.42
0.155
0.174
S
4.72
4.85
0.186
0.191
Remarks: Switching times may
T
24.59
-0.05
25.07
0.1
0.968
0.987
0.004
increase for V
CE
(Clamp) > 0.8 • V
CES
,
U
-0.002
higher T
J
or increased R
G
E
off
12
mJ
R
thJC
R
thCK
0.2 K/W
K/W
0.05
Revers
e
D
iode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
V
F
Tes
t
C
onditions
min. typ.
max.
I
= I
C90
, V
GE
= 0 V, Pulse test,
5.0
V
t
F
< 300 us, duty cycle d < 2%
I
RM
t
rr
I
F
= 25A, V
GE
= 0 V, -di
F
/dt = 50 A/us
v
R
= 100V
15
A
330
ns
IXYS reserves the right to change limits, test conditions,
and dimensions.
IXY
S
M
OSFETs an
d
I
GBT
s
a
r
e
c
overe
d
b
y
o
n
e
o
r
m
or
e
o
f
t
h
e
f
ollowin
g
U
.S
.
p
atents:
4,835,592
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
4,850,072
