Littelfuse-IXTH50P10
| Part # | Littelfuse-IXTH50P10 |
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V
DSS
= –
100V
I
D25
= –
50A
IXTH50P10
IXTT50P10
Standard
Power MOSFET
R
DS(on)
≤
55
m
Ω
P-Channel Enhancement Mode
Avalanche Rated
TO-247 (IXTH)
(TAB)
G
D
S
Symbol
V
DSS
Test Conditions
Maximum Ratings
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C, R
GS
= 1M
Ω
-100
-100
V
V
V
DGR
TO-268 (IXTT)
V
GSS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
DM
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
– 50
A
A
G
– 200
S
I
A
T
C
= 25
°
C
T
C
= 25
°
C
– 50
30
A
(TAB)
E
AS
mJ
G = Gate
S = Source
D = Drain
TAB = Drain
P
D
T
C
= 25
°
C
300
W
T
J
T
JM
T
stg
– 55 … +150
150
– 55 … +150
°
C
°
C
°
C
Features
T
L
T
SOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
300
260
°
C
°
C
z
International standard packages
JEDEC TO-247 AD
M
d
Mounting torque (TO-247)
1.13 / 10
Nm/lb.in.
z
Low R
DS(ON)
HDMOS
TM
process
z
Rugged polysilicon gate cell structure
z
Unclamped Inductive Switching (UIS)
rated
Weight
TO-247
TO-268
6
5
g
g
z
Low package inductance (< 5nH)
– easy
to drive and to protect
Applications
z
High side switching
Push-pull amplifiers
DC Choppers
Automatic test equipment
Symbol
Test Conditions
Characteristic Values
Min. Typ.
Max.
z
(T
J
= 25
°
C, unless otherwise specified)
z
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= – 250
μ
A
V
DS
= V
GS
, I
D
= – 250
μ
A
V
GS
=
±
20V, V
DS
= 0V
-100
– 3.0
V
z
– 5.0
V
Advantages
±
100 nA
z
Easy to mount with 1 screw
I
DSS
V
DS
= 0.8
• V
DSS
V
GS
= 0V
– 25
μ
A
-1 mA
(isolated mounting screw hole)
Space savings
High power density
T
J
= 125
°
C
z
z
R
DS(on)
V
GS
= -10V, I
D
= 0.5 • I
D25
, Note
1
55 m
Ω
DS98905E(6/08)
© 2008 IXYS CORPORATION,
All rights reserved
IXTH50P10
IXTT50P10
Symbol
Test Conditions
Characteristic Values
TO-247 (IXTH) Outline
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= -10V, I
D
= 0.5 • I
D25
, Note
1
V
GS
= 0V, V
DS
= – 25V, f = 1MHz
13
22
S
C
iss
C
oss
C
rss
4350
1505
733
pF
pF
pF
∅
P
1
2
3
t
d(on)
t
r
t
d(off)
t
f
46
39
86
38
ns
ns
ns
ns
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 4.7
Ω
(External)
e
Terminals: 1
– Gate
2 – Drain
Q
g(on)
Q
gs
140
25
nC
nC
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
A
A
1
A
2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Q
gd
85
R
thJC
R
thCS
0.42
°
C/W
°
C/W
b
b
1
b
2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
0.25
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Source-Drain Diode
e
5.20
5.72 0.205
0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
∅
P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232
0.252
I
S
V
GS
= 0V
– 50
A
A
R
4.32
5.49 .170
.216
I
SM
V
SD
t
rr
Repetitive, pulse width limited by T
JM
I
F
= – 25A, V
GS
= 0V,
Note 1
– 200
– 3.0
V
TO-268 (IXTT) Outline
I
F
= – 25A, di/dt = -100A/
μ
s, V
R
= – 50V, V
GS
= 0V
180
ns
Note 1:
Pulse test, t
≤
300
μ
s; duty cycle, d
≤
2%.
IXYS reserves the right to change limits, test conditions,
and dimensions.
IXYS MOSFETs
and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2
6,759,692
6,710,463
7,005,734 B2
7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTH50P10
IXTT50P10
Fig. 1. Output Characteri
s
tics
@ 25ºC
Fig. 2. Extended Output Characteri
s
tics
@ 25ºC
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
-140
-120
-100
-80
-60
-40
-20
0
V
GS
= -10V
V
GS
= -10V
– 9V
– 9V
– 8V
– 8V
– 7V
– 7V
– 6V
– 6V
– 5V
– 5V
-2.0
0
0
-2
-4
-6
-8 -10
-12 -14 -16 -18 -20
V
D S
– Volts
0.0
-0.4
-0.8
-1.2
V
D S
– Volts
-1.6
-2.4
Fig. 3. Output Characteri
s
tics
@ 125ºC
Fig. 4. R
DS(on)
Normalized to 0.5 I
D25
Value
vs. Junction Temperature
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
GS
= -10V
– 9V
V
GS
= – 10V
– 8V
I
D
= – 50A
– 7V
– 6V
I
D
= – 25A
– 5V
0
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
V
D S
– Volts
-50 -25
0
25
50
75 100
125 150
T
J
– Degrees Centigrade
Fig. 6. Drain Current v
s
. C
a
s
e
Temperature
Fig. 5. R
DS(on)
Normalized to 0.5 I
D25
Value v
s
.
I
D
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
GS
= – 10V
T
J
= 125ºC
T
J
= 25ºC
0
-50 -25
0
25
50
T
C
– Degrees Centigrade
75
100 125 150
0
-25
-50 -75
I
D
– Amperes
-100
-125
© 2008 IXYS CORPORATION,
All rights reserved
IXTH50P10
IXTT50P10
Fig. 7. Input Admittance
Fig. 8. Tran
s
conductance
-150
-125
-100
-75
-50
-25
0
40
35
30
25
20
15
10
5
T
J
= – 40ºC
T
J
= – 40ºC
25ºC
125ºC
25ºC
125ºC
0
0
-20
-40
-60
-80
-100
-4
-5
-6
-7 -8
V
G S
– Volts
-9
–
1
0
–
1
1
I
D
– Amperes
Fig. 10. Gate Charge
Fig. 9. Source Current v
s
.
S
ource-To-Drain
Voltage
-150
-125
-100
-75
-50
-25
0
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
V
DS
= – 50V
I
D
= – 25A
I
G
= -1mA
T
J
= 125ºC
T
J
= 125ºC
0
20
40
60
80
100
120
140
-0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5
V
S D
– Volts
Q
G
– nanoCoulombs
Fig. 12. Maximum Tran
s
i
ent Thermal
Impedance
Fig. 11. Capacitance
10000
1000
100
1.00
0.10
0.01
C
iss
C
oss
C
rss
f
= 1
M
H
z
0
-5
-10 -15 -20 -25 -30 -35 -40
V
D S
– Volts
1
10 100
Pulse Width – milliseconds
1000
IXYS reserves the right to change limits, test conditions,
and dimensions.
IXYS REF: T_50P10(7B) 6-23-08-A
Disclaimer Notice – Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
