Littelfuse-IXYS-CLA16E800PN
| Part # | Littelfuse-IXYS-CLA16E800PN |
Download  | Littelfuse-IXYS-CLA16E800PN |
CLA16E800PN
=
V
RRM
I
TAV
V
T
80
0
V
1
0
A
High Efficiency Thyristor
=
=
1.0
7
V
Single Thyristor
Part number
CLA16E800PN
Backside: isolated
2
1
3
TO-220FP
Features / Advantages:
Applications:
Package:
●
Thyristor for line frequency
●
Planar passivated chip
●
Long-term stability
●
Line rectifying 50/60 Hz
●
Softstart AC motor control
●
DC Motor control
●
Isolation Voltage:
●
Industry standard outline
●
RoHS compliant
V~
2500
●
Power converter
●
AC power control
●
Lighting and temperature control
●
Epoxy meets UL 94V-0
●
Soldering pins for PCB mounting
●
Base plate: Plastic overmolded tab
●
Reduced weight
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129b
© 2019
IXYS all rights reserved
CLA16E800PN
Ratings
Thyristor
Symbol
V
RSM/DSM
Definition
Conditions
min. typ. max. Unit
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
900
800
10
V
V
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
V
RRM/DRM
I
R/D
V
R/D
= 800
V
V
R/D
= 800
V
I
T
= 10
A
I
T
= 20
A
I
T
= 10
A
I
T
= 20
A
T
C
= 90°C
180° sine
µA
mA
V
reverse current, drain current
1
forward voltage drop
1.14
1.32
1.07
1.31
10
V
T
V
T
VJ
=
°C
V
125
V
average forward current
RMS forward current
T
VJ
= 150°C
T
VJ
= 150°C
A
I
TAV
I
T(RMS)
V
T0
16
A
0.81
V
threshold voltage
for power loss calculation only
slope resistance
24 m
Ω
r
T
4
K/W
K/W
W
R
thJC
R
thCH
P
tot
thermal resistance junction to case
thermal resistance case to heatsink
0.5
T
C
= 25°C
T
VJ
= 45°C
V
R
= 0 V
31
180
195
155
165
total power dissipation
max. forward surge current
t =
10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t =
10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t =
10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t =
10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
V
R
= 40
0
V f
= 1
M
Hz
t
P
= 30
µs
A
I
TSM
A
T
VJ
= 150°C
V
R
= 0 V
A
A
value for fusing
T
VJ
= 45°C
V
R
= 0 V
I²t
160 A²s
160 A²s
120 A²s
115 A²s
pF
T
VJ
= 150°C
V
R
= 0 V
junction capacitance
T
VJ
= 25°C
T
C
= 150°C
7
C
J
5
2.55
0.5
W
W
W
P
GM
max. gate power dissipation
t
P
= 300
µs
P
GAV
average gate power dissipation
critical rate of rise of current
T
VJ
= 12
5
°
C; f = 50 Hz
repetitive, I
T
= 60
A
150 A/µs
(di/dt)
cr
0.3
t
P
= 200
µs
;
d
i
G
/dt =
A/µs;
I
G
= 0.
3
A
;
V =
⅔
V
DRM
V =
⅔
V
DRM
non-repet., I
T
= 20
A
T
VJ
= 125°C
500 A/µs
500 V/µs
critical rate of rise of voltage
gate trigger voltage
(dv/dt)
cr
V
GT
R
GK
=
∞; method 1 (linear voltage rise)
V
D
= 6 V
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 150°C
1.3
1.6
V
V
gate trigger current
V
D
= 6 V
30 mA
50 mA
I
GT
gate non-trigger voltage
gate non-trigger current
latching current
V
D
=
⅔
V
DRM
t
p
= 10
µs
0.2
1
V
V
GD
I
GD
I
L
mA
T
VJ
= 2
5
°
C
60 mA
I
G
=
0.
3
A
; di
G
/dt =
0.3 A/µs
holding current
V
D
= 6 V
R
GK
=
∞
T
VJ
= 2
5
°
C
T
VJ
= 2
5
°
C
60 mA
I
H
gate controlled delay time
V
D
= ½ V
2
µs
µs
t
gd
DRM
I
G
V
R
= 100 V;
I
T
di/dt =
10 A/µs
dv/dt =
20 V/µs
=
0.
3
A
; di
G
/dt =
0.3 A/µs
20A; V
=
⅔
V
DRM
T
VJ
=125 °C
µs
turn-off time
=
150
t
q
t
p
= 200
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129b
© 2019
IXYS all rights reserved
CLA16E800PN
Ratings
Package TO-220FP
Symbol
I
RMS
Definition
Conditions
min. typ. max.
Unit
per terminal
35
150
125
150
A
°C
°C
°C
g
RMS current
-55
-55
-55
T
VJ
virtual junction temperature
T
op
operation temperature
storage temperature
T
stg
2
Weight
0.4
20
0.6 Nm
M
D
mounting torque
F
60
N
mm
mm
V
mounting force with clip
C
terminal to terminal
terminal to backside
1.6
2.5
1.0
d
Spp/App
d
Spb/Apb
creepage distance on surface | striking distance through air
2.5
t = 1 second
2500
2100
V
isolation voltage
ISOL
50/60 Hz, RMS; I
ISOL
≤
1 mA
t = 1 minute
V
Product Marking
Part description
C = Thyristor
(SCR)
L = High
Efficiency Thyristor
A = (up
to 1200V)
16 = Current
Rating [A]
E = Single
Thyristor
800 = Reverse
Voltage [V]
PN = TO-220ABFP
(3)
Part Number
XXXXXX
yywwZ
Logo
DateCode
Lot#
123456
Location
Ordering
Standard
Ordering Number
Marking on Product
Delivery Mode
Quantity Code
No.
50 517741
CLA16E800PN
CLA16E800PN
Tube
Similar Part
CLA16E1200PN
CS22-08io1M
Package
Voltage class
TO-220ABFP (3)
1200
800
TO-220ABFP (3)
TO-220ABFP (3)
TO-220ABFP (3)
CS22-12io1M
1200
1600
CMA30E1600PN
T
VJ
=
1
50°C
Equivalent Circuits for Simulation
* on die level
Thyristor
V
0
I
R
0
threshold voltage
slope resistance *
0.81
21
V
V
0 max
R
0 max
m
Ω
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129b
© 2019
IXYS all rights reserved
CLA16E800PN
Outlines TO-220FP
A
E
Ø P
A1
Q
H
Millimeters
min max
4.50
Inches
Dim.
D
min
max
A
A1
A2
b
4.90 0.177 0.193
2.74 0.092 0.108
2.96 0.101 0.117
0.90 0.028 0.035
0.60 0.018 0.024
2.34
2.56
0.70
0.45
1 2 3
L1
A2
c
D
L
15.67 16.07 0.617 0.633
9.96 10.36 0.392 0.408
E
e
2.54 BSC
6.48 6.88
0.255 0.271
12.68 13.28 0.499 0.523
0.100 BSC
H
b1
c
b
e
L
L1
Ø P
Q
3.03
3.08
3.20
3.43 0.119 0.135
3.28 0.121 0.129
3.40 0.126 0.134
2
1
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129b
© 2019
IXYS all rights reserved
CLA16E800PN
Thyristor
40
200
160
120
80
1000
V
R
= 0 V
50 Hz, 80% V
RRM
30
I
2
t
I
T
I
TSM
[A]
T
VJ
= 45°C
20
100
[A
2
s]
T
VJ
= 45°C
[A]
T
VJ
= 125°C
T
VJ
= 150°C
125°C
T
VJ
= 125°C
10
T
VJ
= 25°C
1,5
V
T
[V]
0
0,5
40
0,001
10
1,0
2,0
0,01
0,1
t [s]
Fig. 2
Surge overload current
I
TSM
: crest value, t: duration
1
1
2
3
4
5 6
7 8
9
1
0
t [ms]
Fig. 3
I
2
t versus time (1-10 s)
Fig. 1
Forward characteristics
10
2
10
1
10
0
10
-1
20
4
3
2
1
0
I
GD
: T
VJ
= 125°C
C
B
180° sine
15
T
VJ
= 125°C
B
V
G
B
I
T(AV)M
t
gd
10
[V]
[A]
[µs]
lim.
typ.
5
I
GD
: T
VJ
= 25°C
A
0
10
-2
10
-1
10
0
I
G
[A]
10
1
0
25 50 75
100 125 150 175
0
25
50
75
I
G
[mA]
T
case
[°C]
Fig. 6
Max. forward current at
case temperature
Fig. 5
Gate controlled delay time t
gd
Fig. 4
Gate voltage & gate current
Triggering: A = no; B = possible; C = safe
15
12
9
5
R
thHA
dc =
1
0.5
0.4
0.33
0.17
0.08
i
R
thi
(K/W)
t
i
(s)
0.6
0.8
1.0
2.0
4.0
8.0
1
2
3
4
5
0.015
0.175
0.600
2.000
1.210
0.0011
0.0019
0.0700
1.1000
4.9000
4
3
P
(AV)
Z
thJC
6
3
0
2
[W]
[K/W]
1
0
0
5
10
0
50
100
150
1
10
100
t
[ms]
1000
10000
I
T(AV)
[A]
T
amb
[°C]
Fig. 8
Transient thermal impedance junction to case
Fig. 7a
Power dissipation versus direct output current
Fig. 7b
and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129b
© 2019
IXYS all rights reserved
CLA16E800PN
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129b
© 2019
IXYS all rights reserved
Mouser Electronics
Authorized Distributor
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