Littelfuse-IXYS-CLA80E1200HF
| Part # | Littelfuse-IXYS-CLA80E1200HF |
Download  | Littelfuse-IXYS-CLA80E1200HF |
CLA80E1200HF
=
V
RRM
I
TAV
V
T
120
0
V
8
0
A
High Efficiency Thyristor
=
=
1.3
8
V
Single Thyristor
Part number
CLA80E1200HF
Backside: anode
2
1
3
PLUS247
Features / Advantages:
Applications:
Package:
●
Thyristor for line frequency
●
Planar passivated chip
●
Long-term stability
●
Line rectifying 50/60 Hz
●
Softstart AC motor control
●
DC Motor control
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
●
Power converter
●
AC power control
●
Lighting and temperature control
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202d
© 2019
IXYS all rights reserved
CLA80E1200HF
Ratings
Thyristor
Symbol
V
RSM/DSM
Definition
Conditions
min. typ. max. Unit
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
1300
1200
50
V
V
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
V
RRM/DRM
I
R/D
V
R/D
=
1
200 V
V
R/D
=
1
200 V
I
T
= 80
A
I
T
= 160
A
I
T
= 80
A
I
T
= 160
A
T
C
= 115°C
180° sine
µA
mA
V
reverse current, drain current
5
forward voltage drop
1.40
1.77
1.38
1.87
80
V
T
V
T
VJ
=
°C
V
125
V
average forward current
RMS forward current
T
VJ
= 150°C
T
VJ
= 150°C
A
I
TAV
I
T(RMS)
V
T0
126
0.88
A
V
threshold voltage
for power loss calculation only
slope resistance
6.3 m
Ω
0.2 K/W
K/W
r
T
R
thJC
R
thCH
P
tot
thermal resistance junction to case
thermal resistance case to heatsink
0.3
T
C
= 25°C
T
VJ
= 45°C
V
R
= 0 V
620
900
970
765
825
W
A
A
A
A
total power dissipation
max. forward surge current
t =
10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t =
10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t =
10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t =
10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
V
R
= 40
0
V f
= 1
M
Hz
t
P
= 30
µs
I
TSM
T
VJ
= 150°C
V
R
= 0 V
value for fusing
T
VJ
= 45°C
V
R
= 0 V
I²t
4.05 kA²s
3.92 kA²s
2.93 kA²s
2.83 kA²s
pF
T
VJ
= 150°C
V
R
= 0 V
junction capacitance
T
VJ
= 25°C
T
C
= 150°C
36
C
J
10
5
W
W
W
P
GM
max. gate power dissipation
t
P
= 300
µs
0.5
P
GAV
average gate power dissipation
critical rate of rise of current
T
VJ
= 15
0
°
C; f = 50 Hz
repetitive, I
T
= 240
A
150 A/µs
(di/dt)
cr
0.3
t
P
= 200
µs
;
d
i
G
/dt =
A/µs;
I
G
= 0.
3
A
;
V =
⅔
V
DRM
V =
⅔
V
DRM
non-repet., I
T
= 80
A
T
VJ
= 150°C
500 A/µs
critical rate of rise of voltage
gate trigger voltage
1000 V/µs
(dv/dt)
cr
V
GT
R
GK
=
∞; method 1 (linear voltage rise)
V
D
= 6 V
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 150°C
1.5
1.6
V
V
gate trigger current
V
D
= 6 V
38 mA
80 mA
I
GT
gate non-trigger voltage
gate non-trigger current
latching current
V
D
=
⅔
V
DRM
t
p
= 10
µs
0.2
5
V
V
GD
I
GD
I
L
mA
T
VJ
= 2
5
°
C
150 mA
I
G
=
0.
3
A
; di
G
/dt =
0.3 A/µs
holding current
V
D
= 6 V
R
GK
=
∞
T
VJ
= 2
5
°
C
T
VJ
= 2
5
°
C
100 mA
I
H
gate controlled delay time
V
D
= ½ V
2
µs
µs
t
gd
DRM
I
G
V
R
= 100 V;
I
T
di/dt =
20 A/µs
dv/dt =
20 V/µs
=
0.
3
A
; di
G
/dt =
0.3 A/µs
80A; V
=
⅔
V
DRM
T
VJ
=125 °C
µs
turn-off time
=
150
t
q
t
p
= 200
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202d
© 2019
IXYS all rights reserved
CLA80E1200HF
Ratings
Package PLUS247
Symbol
I
RMS
Definition
Conditions
min. typ. max.
Unit
per terminal
70
150
125
150
A
°C
°C
°C
g
RMS current
-40
-40
-40
T
VJ
virtual junction temperature
T
op
operation temperature
storage temperature
T
stg
6
Weight
20
5.5
5.5
120
N
mm
mm
F
C
mounting force with clip
terminal to terminal
terminal to backside
d
Spp/App
d
Spb/Apb
creepage distance on surface | striking distance through air
Product Marking
Part description
C = Thyristor
(SCR)
L = High
Efficiency Thyristor
A = (up
to 1200V)
80 = Current
Rating [A]
E = Single
Thyristor
1200 = Reverse
Voltage [V]
HF = PLUS247
(3)
Logo
IXYS
Part Number
Date Code
Lot#
XXXXXXXXX
yywwZ
1234
Location
Ordering
Ordering Number
Marking on Product
CLA80E1200HF
Delivery Mode
Quantity Code
No.
30 508680
Standard
CLA80E1200HF
Tube
T
VJ
=
1
50°C
Equivalent Circuits for Simulation
* on die level
Thyristor
V
0
I
R
0
threshold voltage
slope resistance *
0.88
3.8
V
V
0 max
R
0 max
m
Ω
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202d
© 2019
IXYS all rights reserved
CLA80E1200HF
Outlines PLUS247
A
D2
E
A2
A
Q
R
A
View A – A
D1
D
4
1
2
3
L1
E1
Sym.
Inches
Millimeter
L
min.
max.
0.190 0.205
0.090 0.100
0.075 0.085
0.045 0.055
0.075 0.084
0.115 0.123
0.024 0.031
0.819 0.840
min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
max.
A
5.21
2.54
2.16
1.40
2.13
3.12
0.80
A1
A2
b
b1
b2
C
A1
b
C
b1
b2
D
20.80 21.34
D1
D2
E
0.515
–
13.07
0.51
–
e
0.010 0.053
0.620 0.635
1.35
15.75 16.13
13.45
E1
e
0.530
–
–
0.215 BSC
0.780 0.800
0.150 0.170
0.220 0.244
0.170 0.190
5.45 BSC
L
19.81 20.32
L1
Q
3.81
5.59
4.32
4.32
6.20
4.83
R
2
1
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202d
© 2019
IXYS all rights reserved
CLA80E1200HF
Thyristor
200
800
700
600
500
400
300
200
10000
V
R
= 0 V
160
T
VJ
= 45°C
T
VJ
= 45°C
120
I
TSM
[A]
I
2
t
I
T
T
VJ
= 125°C
1000
T
VJ
= 125°C
[A
2
s]
80
[A]
125°C
150°C
40
0
50 Hz, 80% V
RRM
T
VJ
= 25°C
100
0.5
1.0
1.5
2.0
0.01
0.1
1
1
2
3
4 5
6 7 8
9
1
0
t [s]
V
T
[V]
t [ms]
Fig. 3
I
2
t versus time (1-10 ms)
Fig. 2
Surge overload current
Fig. 1
Forward characteristics
10
1000
100
80
60
1: I
, T
= 150°C
GD VJ
2: I
, T
GT VJ
=
=
25°C
3: I
, T
GT VJ
-40°C
dc =
1
0.5
0.4
0.33
0.17
0.08
3
typ.
Limit
2
I
T(AV)M
t
gd
V
G
1
1
40
20
0
6
[V]
[µs]
[A]
5
4
10
T
= 125°C
VJ
4: P
= 0.5 W
GAV
5: P
6: P
=
1 W
GM
=
10 W
GM
0.1
1
10
1
10
100
1000 10000
100
1000
0
20 40 60 80
100 120 140 160
I
G
[mA]
Fig. 5
Gate controlled delay time
I
G
[mA]
T
C
[°C]
Fig. 4
Gate trigger characteristics
Fig. 6
Max. forward current
at case temperature
180
160
140
120
0.24
dc =
1
0.5
0.4
0.33
0.17
0.08
0.20
R
thHA
0.4
0.16
Z
thJC
0.12
[K/W]
0.6
0.8
1.0
2.0
4.0
P
(AV)
100
[W]
80
60
40
20
0
R
thi
[K/W]
0.0268
0.0131
0.0218
0.0364
0.1019
t
i
[s]
0.0100
0.0001
0.0150
0.9500
0.1400
0.08
0.04
0.00
0
20 40 60 80
100
0
50
100
150
10
0
10
1
10
2
10
3
10
4
I
T(AV)
[A]
T
amb
[°C]
t [ms]
Fig. 7a
Power dissipation versus direct output current
Fig. 7b
and ambient temperature
Fig. 8
Transient thermal impedance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202d
© 2019
IXYS all rights reserved
