Littelfuse-IXYS-CS20-16IO1
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CS20-16io1
=
V
RRM
I
TAV
V
T
160
0
V
Thyristor
=
2
0
A
=
1.2
3
V
Single Thyristor
Part number
CS20-16io1
Backside: anode
2
1
3
TO-247
Features / Advantages:
Applications:
Package:
●
Thyristor for line frequency
●
Planar passivated chip
●
Long-term stability
●
Line rectifying 50/60 Hz
●
Softstart AC motor control
●
DC Motor control
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
●
Power converter
●
AC power control
●
Lighting and temperature control
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129c
© 2019
IXYS all rights reserved
CS20-16io1
Ratings
Thyristor
Symbol
V
RSM/DSM
Definition
Conditions
min. typ. max. Unit
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
1700
1600
20
V
V
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
V
RRM/DRM
I
R/D
V
R/D
=
1
600 V
V
R/D
=
1
600 V
I
T
= 20
A
I
T
= 40
A
I
T
= 20
A
I
T
= 40
A
T
C
= 130°C
180° sine
µA
mA
V
reverse current, drain current
2
forward voltage drop
1.27
1.53
1.23
1.57
20
V
T
V
T
VJ
=
°C
V
125
V
average forward current
RMS forward current
T
VJ
= 150°C
T
VJ
= 150°C
A
I
TAV
I
T(RMS)
V
T0
31
A
0.87
V
threshold voltage
for power loss calculation only
slope resistance
17.3 m
Ω
0.6 K/W
K/W
r
T
R
thJC
R
thCH
P
tot
thermal resistance junction to case
thermal resistance case to heatsink
0.3
T
C
= 25°C
T
VJ
= 45°C
V
R
= 0 V
200
260
280
220
240
W
A
A
A
A
total power dissipation
max. forward surge current
t =
10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t =
10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t =
10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t =
10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
V
R
= 40
0
V f
= 1
M
Hz
t
P
= 30
µs
I
TSM
T
VJ
= 150°C
V
R
= 0 V
value for fusing
T
VJ
= 45°C
V
R
= 0 V
I²t
340 A²s
325 A²s
240 A²s
240 A²s
pF
T
VJ
= 150°C
V
R
= 0 V
junction capacitance
T
VJ
= 25°C
T
C
= 150°C
16
C
J
10
5
W
W
W
P
GM
max. gate power dissipation
t
P
= 300
µs
0.5
P
GAV
average gate power dissipation
critical rate of rise of current
T
VJ
= 12
5
°
C; f = 50 Hz
repetitive, I
T
= 60
A
150 A/µs
(di/dt)
cr
0.3
t
P
= 200
µs
;
d
i
G
/dt =
A/µs;
I
G
= 0.
3
A
;
V =
⅔
V
DRM
V =
⅔
V
DRM
non-repet., I
T
= 20
A
T
VJ
= 125°C
500 A/µs
critical rate of rise of voltage
gate trigger voltage
1000 V/µs
(dv/dt)
cr
V
GT
R
GK
=
∞; method 1 (linear voltage rise)
V
D
= 6 V
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 125°C
1.3
1.6
V
V
gate trigger current
V
D
= 6 V
50 mA
80 mA
I
GT
gate non-trigger voltage
gate non-trigger current
latching current
V
D
=
⅔
V
DRM
t
p
= 10
µs
0.2
5
V
V
GD
I
GD
I
L
mA
T
VJ
= 2
5
°
C
150 mA
I
G
=
0.
3
A
; di
G
/dt =
0.3 A/µs
holding current
V
D
= 6 V
R
GK
=
∞
T
VJ
= 2
5
°
C
T
VJ
= 2
5
°
C
100 mA
I
H
gate controlled delay time
V
D
= ½ V
2
µs
µs
t
gd
DRM
I
G
V
R
= 100 V;
I
T
di/dt =
15 A/µs
dv/dt =
20 V/µs
=
0.
3
A
; di
G
/dt =
0.3 A/µs
20A; V
=
⅔
V
DRM
T
VJ
=125 °C
µs
turn-off time
=
150
t
q
t
p
= 200
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129c
© 2019
IXYS all rights reserved
CS20-16io1
Ratings
Package TO-247
Symbol
I
RMS
Definition
Conditions
min. typ. max.
Unit
per terminal
70
150
125
150
A
°C
°C
°C
g
RMS current
-40
-40
-40
T
VJ
virtual junction temperature
T
op
operation temperature
storage temperature
T
stg
6
Weight
0.8
20
1.2 Nm
120
M
D
mounting torque
F
N
mounting force with clip
C
Product Marking
Logo
IXYS
XXXXXXXXX
yywwZ
Part Number
Date Code
1234
Lot#
Location
Ordering
Ordering Number
CS20-16io1
Marking on Product
CS20-16io1
Delivery Mode
Quantity Code
No.
30 466530
Standard
Tube
Similar Part
Package
TO-247AD (3)
Voltage class
CS20-12io1
CS20-14io1
1200
1400
TO-247AD (3)
T
VJ
=
1
50°C
Equivalent Circuits for Simulation
* on die level
Thyristor
V
0
I
R
0
threshold voltage
slope resistance *
0.87
14.8
V
V
0 max
R
0 max
m
Ω
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129c
© 2019
IXYS all rights reserved
CS20-16io1
Outlines TO-247
A
D2
E
A2
Ø
P1
Ø
P
Sym.
Inches
min. max.
Millimeter
S
Q
min.
4.70
2.21
1.50
max.
A
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.215 BSC
5.30
2.59
2.49
A1
A2
D
D1
D
20.79 21.45
15.48 16.24
2x
E2
E
4
E2
e
4.31
5.48
5.46 BSC
1
2
3
L
0.780 0.800
19.80 20.30
L1
Ø P
Q
–
0.177
–
4.49
3.65
6.19
L1
0.140 0.144
0.212 0.244
0.242 BSC
3.55
5.38
E1
S
6.14 BSC
L
b
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.99
1.65
2.59
0.38
13.07
0.51
13.45
–
1.40
b2
b4
c
2.39
3.43
0.89
–
2x
b2
D1
D2
E1
Ø P1
0.515
–
C
3x
b
0.020 0.053
1.35
–
b4
A1
0.530
–
–
0.29
7.39
2x
e
2
1
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129c
© 2019
IXYS all rights reserved
CS20-16io1
Thyristor
60
250
200
1000
V
R
= 0 V
50 Hz, 80% V
RRM
T
VJ
= 45°C
T
VJ
= 125°C
T
VJ
= 45°C
40
I
TSM
150
[A]
I
T
I
2
t
100
[A]
[A
2
s]
20
T
VJ
= 125°C
100
50
125°C
150°C
T
VJ
= 25°C
0
10
0,5
1,0
1,5
2,0
0,01
0,1
1
1
2
3
4 5
6 7 8
9
1
0
t [s]
V
T
[V]
t [ms]
Fig. 3
I
2
t versus time (1-10 ms)
Fig. 2
Surge overload current
Fig. 1
Forward characteristics
10
1000
100
80
60
40
20
0
1: I
, T
= 150°C
25°C
GD VJ
2: I
, T
GT VJ
=
3: I
, T
= -40°C
GT VJ
dc =
1
0.5
0.4
6
typ.
Limit
0.33
0.17
0.08
I
T(AV)M
t
gd
V
G
3
2
1
5
[V]
1
[µs]
[A]
4
10
T
= 125°C
VJ
4: P
= 0.5 W
GAV
GM
5: P
6: P
=
5 W
=
10 W
GM
0,1
1
1
10
100
1000 10000
10
100
I
G
[mA]
1000
0
25 50 75
100 125 150
I
G
[mA]
T
C
[°C]
Fig. 5
Gate controlled delay time
Fig. 4
Gate trigger characteristics
Fig. 6
Max. forward current
at case temperature
R
thHA
dc =
1
0.5
0.4
0.33
0.17
0.08
0.6
0,6
0.8
1.0
2.0
4.0
8.0
30
20
Z
thJC
0,4
[K/W]
P
(AV)
R
thi
[K/W] t
i
[s]
0.08
0.06
0.20
0.10
0.16
0.01
0.0001
0.03
[W]
10
0,2
0.30
0.11
0
0,0
10
0
0
10
20
0
50
100
150
10
1
10
2
10
3
10
4
I
T(AV)
[A]
T
amb
[°C]
t [ms]
Fig. 7a
Power dissipation versus direct output current
Fig. 7b
and ambient temperature
Fig. 8
Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129c
© 2019
IXYS all rights reserved
CS20-16io1
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191129c
© 2019
IXYS all rights reserved
