Littelfuse-IXYS-CS45-08IO1
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CS 45
V
RRM
= 800-1600 V
I
T(RMS)
= 75 A
I
T(AV)M
= 48 A
Phase Control Thyristor
TO-247 AD
Version io1
ISOPLUS 247
TM
V
RSM
V
DSM
V
V
RRM
V
DRM
V
Type
Version io1R
A
C
C
A
G
C
A
G
G
900
1300
1700
800 CS
45-08io1
1200 CS
45-12io1
1600 CS
45-16io1 CS
45-16io1R
Isolated
A (TAB)
back surface
*
*
Patent pending
C = Cathode, A = Anode, G = Gate
Symbol
Conditions
Maximum Ratings
Features
I
T(RMS)
I
T(AV)M
T
VJ
= T
VJM
T
C
= 75°C; 180° sine
75
48
A
A
• Thyristor for line frequency
• International standard package
JEDEC TO-247
• Planar passivated chip
• Long-term stability of blocking
currents and voltages
I
TSM
T
VJ
= 45°C
V
R
= 0 V
t = 10 ms
(50 Hz), sine
t = 8.3 ms (60 Hz), sine
520
560
A
A
T
VJ
= T
VJM
V
R
= 0 V
t = 10 ms
(50 Hz), sine
t = 8.3 ms (60 Hz), sine
460
500
A
A
• Version
AR isolated and
UL registered E153432
I
2
t
T
VJ
= 45°C
V
R
= 0 V
t = 10 ms
(50 Hz), sine
t = 8.3 ms (60 Hz), sine
1350
1300
A
2
s
A
2
s
●
Epoxy meets UL 94V-0
T
VJ
= T
VJM
V
R
= 0 V
t = 10 ms
(50 Hz), sine
t = 8.3 ms (60 Hz), sine
1050
1030
A
2
s
A
2
s
Applications
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 40 A
150
A/µs
f = 50 Hz, t
P
= 200 µs
V
D
=
2
/
3
V
DRM
• Motor
control
• Power
converter
I
G
= 0.3 A
di
G
/dt = 0.3 A/µs
non repetitive, I
T
= I
T(AV)M
V
DR
=
2
/
3
V
DRM
500
A/µs
V/µs
• AC
power controller
• Switch-mode and
resonant mode
power supplies
(dv/dt)
cr
P
GM
T
VJ
= T
VJM
;
1000
• Light
and temperature control
R
GK
=
¥
; method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
T(AV)M
t
P
= 30
µs
t
P
= 300
µs
10
5
0.5
W
W
W
Advantages
P
G(AV)
V
RGM
10
V
• Easy
to mount with 1 screw
(isolated mounting screw hole)
• Space
and weight savings
• Simple
mounting
• Improved
temperature and power
cycling
T
VJ
T
VJM
T
stg
-40…+140
140
-40…+125
°C
°C
°C
M
d
F
C
Version io1:
mounting torque M3
0.8…1.2
20…120
2500
Nm
N
Version io1R:
mounting force with clip
50/60 Hz, RMS,
t = 1 minute, leads-to-tab
V
ISOL
*
V~
g
Weight
6
*
Verson io1R only
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
1 – 3
© 2000 IXYS All rights reserved
CS 45
Symbol
I
R
, I
D
Conditions
Characteristic Values
10
V
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
25°C
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
I
T
= 80 A; T
VJ
= 25
°
C
£
£
5
1.64
0.85
mA
V
=
3: I
GT
, T
VJ
= -40°C
V
T
V
G
V
T0
r
T
For power-loss calculations only (T
VJ
= 125°C)
V
11 m
W
V
GT
I
GT
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= 25°C
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
£
£
£
£
1.5
1.6
100 mA
200 mA
V
V
6
5
1
T
3
2
1
4
V
GD
I
GD
T
VJ
= T
VJM
;
V
D
=
2
/
3
V
DRM
£
£
0.2
10 mA
V
4: P
GAV
= 0.5 W
5: P
GM
5 W
6: P
GM
= 10
W
=
I
GD
, T
VJ
=125°C
10
I
L
T
VJ
= 25°C; t
P
= 10
m
s
I
G
= 0.3 A; di
G
/dt = 0.3 A/µs
£
150 mA
0.1
1
100
1000 m
A
1
0000
I
G
I
H
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
¥
£
£
100 mA
Fig. 1
Gate trigger range
t
gd
T
VJ
= 25°C; V
D
= ½ V
DRM
2
µs
I
G
= 0.3 A; di
G
/dt = 0.3 A/µs
R
thJC
R
thJH
DC current
DC current
0.62 K/W
0.82 K/W
1000
T
VJ
= 25°C
50 m/s
2
µ
s
a
Max. acceleration, 50 Hz
t
gd
typ.
Limit
100
10
1
TO-247 AD and ISOPLUS 24
7
TM
Dim.
Millimeter
Min. Max. Min.
Inches
Max.
A
B
19.81 20.32
0.780 0.800
20.80 21.46
0.819 0.845
C
D*
15.75 16.26
0.610 0.640
3.55 3.65 0.140
0.144
E
F
4.32 5.49 0.170
0.216
5.4
6.2 0.212 0.244
10
100
mA
1000
I
G
G
H
1.65 2.13 0.065
0.084
–
4.5
–
0.177
Fig. 2
Gate controlled delay time t
gd
J
1.0
1.4 0.040 0.055
K
10.8 11.0 0.426
0.433
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
N
1.5 2.49 0.087
0.102
* ISOPLUS 24
7
TM
without hole
2 – 3
© 2000 IXYS All rights reserved
CS 45
100
A
400
2000
A
2
s
50Hz, 80%V
RRM
V
R
= 0 V
A
I
TSM
80
I
T
300
200
100
0
T
VJ
= 45
°
C
I
2
t
T
VJ
= 45
°
C
60
40
20
0
1000
T
VJ
= 125
°
C
T
VJ
= 125
°
C
T
VJ
= 125
°
C
T
VJ
= 25
°
C
500
ms
0.0
0.5
1.0
1.5
V
T
2.0
0.001
0.01
0.1
s
1
1
2
3
4
5 6
7 8 910
t
V
t
Fig. 5
I
2
t versus time (1-10 ms)
Fig. 3
Forward characteristics
Fig. 4
Surge overload current
I
TSM
: crest value, t: duration
140
W
80
A
DC
70
60
50
40
30
20
10
0
180
°
sin
120
°
60
°
120
P
T
I
T(AV)M
R
thKA
:
0.1 K/W
0.5 K/W
1 K/W
30
°
100
80
60
40
20
0
2 K/W
4 K/W
10 K/W
DC
180
°
sin
120
°
60
°
30
°
0
10 20 30 40 50 60 70
I
T(AV)M
0
25
50
75
100 12
5
°
C
150
A
°
C
0
20 40 60 80
100 120
T
amb
T
case
Fig. 6
Power dissipation versus forward current and ambient temperature
Fig. 7
Max. forward current at case
temperature
1.0
R
thJC
for various conduction angles d:
K/W
d
R
thJC
(K/W)
30
°
60
°
120
°
180
°
DC
Z
thJC
DC
180
°
120
°
60
°
0.62
0.71
0.748
0.793
0.817
0.5
30
°
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
2
3
0.206
0.362
0.052
0.013
0.118
1.488
0.0
0.001
0.01
0.1
1
10
s
100
t
Fig. 8
Transient thermal impedance junction to case
3 – 3
© 2000 IXYS All rights reserved
