Littelfuse-IXYS-IXFB100N50P
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Polar
TM
HiPerFET
TM
Power MOSFET
V
DSS
= 500V
I
D25
= 100A
R
DS(on)
49m
IXFB100N50P
t
rr
200ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
PLUS264
TM
Symbol
V
DSS
Test Conditions
Maximum Ratings
T
J
= 25
C to 150
C
T
J
= 25
C to 150
C, R
GS
= 1M
500
500
V
V
G
V
DGR
D
S
Tab
V
GSS
V
GSM
Continuous
Transient
30
40
V
V
G =
Gate
D
= Drain
I
D25
I
DM
T
C
= 25
C
T
C
= 25
C, Pulse
Width Limited by T
JM
100
250
A
A
S
= Source
Tab =
Drain
I
A
E
AS
T
C
= 25
C
T
C
= 25
C
100
5
A
J
dv/dt
P
D
I
S
I
DM
, V
DD
V
DSS
, T
J
150
C
T
C
= 25
C
20
V/ns
W
Features
1890
T
J
T
JM
T
stg
-55 … +150
150
-55 … +150
C
C
C
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Low R
DS(on)
and Q
G
T
L
T
SOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
F
C
Mounting Force
30..120/6.7..27
10
N/lb
g
Advantages
Weight
Easy to Mount
Space Savings
Applications
DC-DC Converters
Battery Chargers
Symbol
Test Conditions
Characteristic Values
Switch-Mode and Resonant-Mode
Power Supplies
(T
J
= 25
C Unless Otherwise Specified)
Min.
500
3.0
Typ.
Max.
Uninterrupted Power Supplies
AC Motor Drives
High Speed Power Switching
Applications
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
30V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
V
5.0
200 nA
I
DSS
25
A
T
J
= 125
C
2 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
DSS
, Note 1
49 m
DS99496F(2/15)
© 2015 IXYS CORPORATION,
All Rights Reserved
IXFB100N50P
Symbol
Test Conditions
Characteristic Values
PLUS264
TM
(IXFB) Outline
(T
J
= 25
C Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20V, I
D
= 50A, Note 1
50
80
S
C
iss
C
oss
C
rss
20
1700
140
nF
pF
pF
V
GS
= 0V, V
DS
= 25V, f = 1MHz
t
d(on)
36
ns
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
DSS
R
G
= 1
(External)
t
r
29
ns
ns
t
d(off)
110
t
f
26
ns
Q
g(on)
Q
gs
240
96
nC
nC
nC
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
DSS
Q
gd
78
R
thJC
R
thCS
0.066
C/W
C/W
0.13
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C Unless Otherwise Specified)
Min.
Typ.
Max.
100
250
1.5
I
S
V
GS
= 0V
A
A
V
I
SM
V
SD
Repetitive, Pulse Width Limited by T
JM
I
F
= 100A, V
GS
= 0V, Note 1
t
rr
Q
RM
I
RM
250 ns
C
I
F
= 25A, -di/dt = 100A/
s
0.6
6.0
V
R
= 100V, V
GS
= 0V
A
Note
1. Pulse
test, t
300
s, duty cycle, d
2%.
IXYS Reserves the Right to Change Limits, Test Conditions,
and Dimensions.
IXYS MOSFETs
and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072
5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2
6,759,692
6,710,463
6,771,478 B2 7,071,537
IXFB100N50P
Fig. 1. Output Characteristics @ T
J
= 25ºC
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
100
80
60
40
20
0
V
= 10V
8V
GS
V
= 10V
9V
GS
200
160
120
80
8V
7V
7V
6V
5V
40
6V
10
0
0
1
2
3
4
5
0
5
15
20
25
V
DS
– Volts
V
DS
– Volts
Fig. 4. R
DS(on)
Normalized to I
D
= 50A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T
J
= 125ºC
100
80
60
40
20
0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
V
= 10V
7V
GS
V
= 10V
GS
I
= 100A
D
I
= 50A
D
6V
5V
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
T
J
– Degrees Centigrade
V
DS
– Volts
Fig. 5. R
DS(on)
Normalized to I
D
= 50A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
3.2
2.8
2.4
2.0
1.6
1.2
0.8
V
= 10V
100
80
60
40
20
0
GS
T =
125ºC
J
T
J
= 25ºC
0
40
80
120
160
200
-50
-25
0
25
50
75
100
125
150
T
C
– Degrees Centigrade
I
D
– Amperes
© 2015 IXYS CORPORATION,
All Rights Reserved
IXFB100N50P
Fig. 8. Transconductance
Fig. 7. Input Admittance
160
140
120
100
80
160
140
120
100
80
T
J
= – 40ºC
25ºC
T
J
= 125ºC
25ºC
– 40ºC
125ºC
60
60
40
40
20
20
0
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0
20
40
60
80
100
120
140
160
180
V
GS
– Volts
I
D
– Amperes
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
300
250
200
150
100
50
10
9
8
7
6
5
4
3
2
1
0
V
= 250V
DS
I
I
= 50A
D
G
= 10mA
T
J
= 125ºC
T
J
= 25ºC
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
125
150
175
200
225
250
V
SD
– Volts
Q
G
– NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100,000
10,000
1,000
100
1,000
100
10
f = 1 MHz
R
Limit
DS(on)
C
iss
25µs
100µs
1ms
C
C
oss
10ms
DC
T
= 150ºC
= 25ºC
J
T
C
Single Pulse
rss
1
0
5
10
15
20
25
30
35
40
10
100
1000
V
DS
– Volts
IXYS Reserves the Right to Change Limits, Test Conditions,
and Dimensions.
V
DS
– Volts
IXFB100N50P
Fig. 13. Maximum Transient Thermal Impedance
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width – Seconds
Fig. 14. Cauer Thermal Network
i
Ri (
C
W
)
Ci (J/
C
)
1
2
3
4
0.0011707 0.0031990
0.0252980 0.0449880
0.0280620 0.7284100
0.0091690
© 2015 IXYS CORPORATION,
All Rights Reserved
IXYS REF: F_100N50P(9S) 2-08-06-A
Disclaimer Notice – Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
