Littelfuse-IXYS-IXFH12N90P
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Preliminary Technical Information
Polar
TM
Power MOSFET
HiPerFET
TM
IXFH12N90P
IXFV12N90P
IXFV12N90PS
V
DSS
= 900V
I
D25
= 12A
R
DS(on)
≤
900m
Ω
≤
300
ns
t
rr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
PLUS220 (IXFV)
G
D
S
Symbol
V
DSS
Test Conditions
Maximum Ratings
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C, R
GS
= 1M
Ω
900
900
V
V
D (TAB)
V
DGR
PLUS220SMD (IXFV_S)
V
GSS
V
GSM
Continuous
Transient
±
30
±
40
V
V
I
D25
I
DM
T
C
= 25
°
C
12
24
A
A
T
C
= 25
°
C, pulse width limited by T
JM
G
S
I
A
T
C
= 25
°
C
T
C
= 25
°
C
6
A
D (TAB)
E
AS
500
mJ
TO-247 (IXFH)
dV/dt
P
D
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150
°
C
T
C
= 25
°
C
15
V/ns
W
380
T
J
-55 … +150
150
°
C
°
C
°
C
T
JM
T
stg
D (TAB)
-55 … +150
T
L
Maximum lead temperature for soldering
Plastic body for 10s
300
260
°
C
°
C
G =
Gate
S =
Source TAB
= Drain
D
= Drain
T
SOLD
M
d
Mounting torque (TO-247)
Mounting force (PLUS220)
1.13/10
Nm/lb.in.
N/lb.
F
C
11..65/2.5..14.6
Features
z
International standard packages
z
Avalanche Rated
z
Low package inductance
z
Fast intrinsic diode
Weight
TO-247
PLUS220 types
6
4
g
g
Advantages
z
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
z
(T
J
= 25
°
C, unless otherwise specified)
Min.
900
3.5
Typ.
Max.
z
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
V
Applications:
6.5
z
Switched-mode and resonant-mode
power supplies
±
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0V
25
μ
A
1 mA
z
DC-DC Converters
T
J
= 125
°
C
z
Laser Drivers
z
AC and DC motor drives
z
Robotics and servo controls
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note
1
900 m
Ω
DS100056(10/08)
© 2008 IXYS CORPORATION, All rights reserved
IXFH12N90P IXFV12N90P
IXFV12N90PS
Symbol
Test Conditions
Characteristic Values
PLUS220 (IXFV) Outline
(T
J
= 25
°
C unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1
5.0
8.2
S
R
Gi
Gate input resistance
1.7
Ω
C
iss
C
oss
C
rss
3080
200
33
pF
pF
pF
V
GS
= 0V, V
DS
= 25V, f = 1MHz
t
d(on)
t
r
t
d(off)
t
f
32
34
50
68
ns
ns
ns
ns
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2
Ω
(External)
Q
g(on)
Q
gs
56
18
27
nC
nC
nC
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Q
gd
R
thJC
R
thCS
0.33
°
C
/W
°
C
/W
(TO-247, PLUS220)
0.25
Source-Drain Diode
Characteristic Values
T
J
= 25
°
C unless otherwise specified)
Min.
Typ.
Max.
I
S
V
GS
= 0V
12
A
A
V
I
SM
V
SD
Repetitive, pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
48
TO-247 (IXFH) Outline
1.5
t
rr
300 ns
I
F
= 6A, -di/dt = 100A/
μ
s
Q
RM
I
RM
0.9
μ
C
V
R
= 100V, V
GS
= 0V
7.8
A
∅
P
Note 1:
Pulse test, t
≤
300
μ
s; duty cycle, d
≤
2%.
PLUS220SMD (IXFV_S)
Outline
e
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A
1
A
2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b
1
b
2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
PRELIMINARY TECHNICAL INFORMATION
e
5.20
5.72 0.205
0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
The product presented herein is under development.
The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation.
IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
∅
P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232
0.252
R
S
4.32
5.49
.170 .216
242 BSC
6.15 BSC
IXYS reserves the right to change limits, test conditions,
and dimensions.
IXYS MOSFETs
and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2
6,759,692
6,710,463
7,005,734 B2
7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFH12N90P IXFV12N90P
IXFV12N90PS
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
12
11
10
9
24
22
20
18
16
14
12
10
8
V
GS
= 10V
8V
V
GS
= 10V
8V
8
7V
7
6
7V
5
4
6V
5V
3
6
6V
5V
2
4
1
2
0
0
0
0
0
1
2
3
4
5
6
7
8
9
10
11
0
5
10
15
20
25
30
150
150
V
DS
– Volts
V
DS
– Volts
Fig. 4. R
DS(on)
Normalized to I
D
= 6A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
12
11
10
9
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
GS
= 10V
8V
V
GS
= 10V
I
D
= 12A
8
7
7V
6V
I
D
= 6A
6
5
4
3
2
1
0
2
4
6
8
10 12 14 16 18 20 22 24 26
V
DS
– Volts
-50
-25
0
25
50
75
100
125
T
J
– Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 6A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
13
12
11
10
9
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
GS
= 10V
T
J
= 125ºC
8
7
6
5
4
T
J
= 25ºC
3
2
1
0
2
4
6
8
10 12 14 16 18 20 22 24
I
D
– Amperes
-50
-25
0
25
50
75
100
125
T
C
– Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXFH12N90P IXFV12N90P
IXFV12N90PS
Fig. 7. Input Admittance
Fig. 8. Transconductance
14
12
10
8
14
12
10
8
T
J
= – 40ºC
T
J
= 125ºC
25ºC
– 40ºC
25ºC
125ºC
6
6
4
4
2
2
0
0
0
2
4
6
8
10
12
14
4.5
0.3
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
1.1
40
V
GS
– Volts
I
D
– Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
16
14
12
10
8
35
30
25
20
15
10
5
V
DS
= 450V
I
I
D
= 6A
G
= 10mA
6
T
J
= 125ºC
4
T
J
= 25ºC
2
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
10
20
30
40
50
60
70
80
V
SD
– Volts
Q
G
– NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1,000
100
1.00
0.10
0.01
C
iss
C
oss
C
= 1 MHz
5
f
rss
10
0.00001
0.0001
0.001
0.01
0.1
1
10
10
15
20
25
30
35
Pulse Width – Seconds
V
DS
– Volts
IXYS reserves the right to change limits, test conditions,
and dimensions.
IXYS REF: F_12N90P(65)10-22-08
