Littelfuse-IXYS-IXFH28N60P3
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Advance Technical Information
Polar3
TM
HiperFET
TM
Power MOSFETs
V
DSS
= 600V
I
D25
= 28A
R
DS(on)
≤
260m
Ω
IXFQ28N60P3
IXFH28N60P3
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-3P (IXFQ)
G
D
Symbol
V
DSS
Test Conditions
Maximum Ratings
S
Tab
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C, R
GS
= 1M
Ω
600
600
V
V
V
DGR
TO-247 ( IXFH)
V
GSS
V
GSM
Continuous
Transient
±
30
±
40
V
V
I
D25
I
DM
T
C
= 25
°
C
28
70
A
A
T
C
= 25
°
C, Pulse Width Limited by T
JM
G
I
A
T
C
= 25
°
C
T
C
= 25
°
C
14
A
D
Tab
S
E
AS
500
mJ
dv/dt
P
D
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25
°
C
35
V/ns
W
G =
Gate
S =
Source
D
= Drain
Tab =
Drain
695
T
J
-55 … +150
150
°
C
°
C
°
C
T
JM
T
stg
Features
-55 … +150
T
L
T
sold
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
300
260
°
C
°
C
z
Fast Intrinsic Rectifier
z
Avalanche Rated
z
Low R
DS(ON)
and Q
G
M
d
Mounting Torque
1.13 / 10
Nm/lb.in.
z
Low Package Inductance
Weight
TO-3P
TO-247
5.5
6.0
g
g
Advantages
z
High Power Density
z
Easy to Mount
z
Space Savings
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C Unless Otherwise Specified)
Min.
600
3.0
Typ.
Max.
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 2.5mA
V
GS
=
±
30V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
V
Applications
5.0
z
Switch-Mode and Resonant-Mode
Power Supplies
z
DC-DC Converters
±
100 nA
I
DSS
25
μ
A
z
Laser Drivers
z
AC and DC Motor Drives
z
Robotics and Servo Controls
T
J
= 125
°
C
1.5 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
260 m
Ω
DS100322(03/11)
© 2011 IXYS CORPORATION,
All Rights Reserved
IXFQ28N60P3
IXFH28N60P3
Symbol
Test Conditions
Characteristic Values
TO-3P Outline
(T
J
= 25
°
C Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1
V
GS
= 0V, V
DS
= 25V, f = 1MHz
Gate Input Resistance
18
30
S
C
iss
C
oss
C
rss
3560
360
3.3
pF
pF
pF
R
Gi
1.0
Ω
t
d(on)
t
r
t
d(off)
t
f
27
18
48
19
ns
ns
ns
ns
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1
Ω
(External)
Q
g(on)
Q
gs
50
17
14
nC
nC
nC
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Q
gd
R
thJC
R
thCS
0.18
°
C/W
°
C/W
0.25
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C Unless Otherwise Specified)
Min.
Typ.
Max.
TO-247 Outline
I
S
V
GS
= 0V
28
A
A
V
I
SM
V
SD
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
112
1.4
∅
P
t
rr
250
ns
A
1
2
3
I
F
= 14A, -di/dt = 100A/
μ
s
I
RM
Q
RM
9.0
0.8
V
R
= 100V, V
GS
= 0V
μ
C
e
Terminals: 1
– Gate
2 – Drain
Note
1. Pulse
test, t
≤
300
μ
s, duty cycle, d
≤
2%.
3 – Source
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A
1
A
2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b
1
b
2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development.
The Technical Specifications offered are derived
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
“considered reflection” of the anticipated result.
IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205
0.225
.780 .800
.177
∅
P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232
0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs
and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2
6,759,692
6,710,463
7,005,734 B2
7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFQ28N60P3
IXFH28N60P3
Fig. 1. Output Characteristics @ T
J
= 25ºC
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
28
24
20
16
12
8
60
50
40
30
20
10
0
V
GS
= 10V
8V
V
GS
= 10V
8V
7V
6V
7V
6V
5V
4
5V
0
0
5
10
15
20
25
30
0
0
0
1
2
3
4
5
6
7
8
V
DS
– Volts
V
DS
– Volts
Fig. 4. R
DS(on)
Normalized to I
D
= 14A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T
J
= 125ºC
28
24
20
16
12
8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
GS
= 10V
7V
V
GS
= 10V
6V
I
D
= 28A
I
D
= 14A
5V
4
0
2
4
6
8
10
12
14
16
18
-50
-25
0
25
50
75
100
125
150
V
DS
– Volts
T
J
– Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 14A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
30
25
20
15
10
5
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
0
10
20
30
40
50
60
-50
-25
0
25
50
75
100
125
150
I
D
– Amperes
T
C
– Degrees Centigrade
© 2011 IXYS CORPORATION,
All Rights Reserved
IXFQ28N60P3
IXFH28N60P3
Fig. 7. Input Admittance
Fig. 8. Transconductance
50
40
30
20
10
0
60
50
40
30
20
10
0
T
J
= – 40ºC
T
J
= 125ºC
25ºC
25ºC
– 40ºC
125ºC
0
10
20
30
40
50
3.0
0.3
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
1.2
40
V
GS
– Volts
I
D
– Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
100
90
80
70
60
50
40
30
20
10
0
V
DS
= 300V
I
D
= 14A
I
G
= 10mA
T
J
= 125ºC
T
J
= 25ºC
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
5
10
15
20
25
30
35
40
45
50
V
SD
– Volts
Q
G
– NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100
10
1
10,000
1,000
100
10
R
DS(on)
Limit
C
100µs
iss
C
oss
T
J
= 150ºC
C
T
C
= 25ºC
rss
1ms
Single Pulse
= 1 MHz
5
f
1
0.1
10
15
20
25
30
35
10
100
1,000
V
DS
– Volts
V
DS
– Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFQ28N60P3
IXFH28N60P3
Fig. 13. Maximum Transient Thermal Impedance
AAAAA
0.3
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width – Seconds
© 2011 IXYS CORPORATION,
All Rights Reserved
IXYS REF: F_28N60P3(K7)03-23-11
