Littelfuse-IXYS-IXFH30N85X
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Advance Technical Information
X-Class HiPerFET
TM
Power MOSFET
V
DSS
= 850V
I
D25
= 30A
R
DS(on)
220m
IXFT30N85XHV
IXFH30N85X
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-268HV (IXFT)
G
Symbol
V
DSS
Test Conditions
Maximum Ratings
S
T
J
= 25
C to 150
C
850
850
V
V
D (Tab)
V
DGR
T
J
= 25
C to 150
C, R
GS
= 1M
TO-247 (IXFH)
V
GSS
V
GSM
Continuous
Transient
30
40
V
V
I
D25
I
DM
T
C
= 25
C
T
C
= 25
C, Pulse Width Limited by T
JM
30
60
A
A
G
D
I
A
T
C
= 25
C
T
C
= 25
C
15
1
A
J
S
D (Tab)
= Drain
E
AS
dv/dt
P
D
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25
C
50
V/ns
W
G =
Gate
S =
Source
D
Tab =
Drain
695
T
J
-55 … +150
150
C
C
C
T
JM
T
stg
-55 … +150
Features
T
L
T
SOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
International Standard Packages
High Voltage Package
Low R
DS(ON)
and Q
G
Avalanche Rated
Low Package Inductance
M
d
Mounting Torque (TO-247)
1.13 / 10
Nm/lb.in
Weight
TO-268HV
TO-247
4
6
g
g
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ.
Max.
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 2.5mA
V
GS
=
30V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
850
V
V
Applications
3.5
5.5
Switch-Mode and Resonant-Mode
100 nA
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
I
DSS
25
A
3 mA
T
J
= 125
C
Robotics and Servo Controls
R
DS(on)
V
GS
= 10V, I
D
= 0.5
•
I
D25
, Note 1
220 m
DS100760(11/16)
© 2016 IXYS CORPORATION, All Rights Reserved
IXFT30N85XHV
IXFH30N85X
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ.
Max
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Gate Input Resistance
11
18
S
R
Gi
0.9
C
iss
C
oss
C
rss
2460
2540
30
pF
pF
pF
V
GS
= 0V, V
DS
= 25V, f = 1MHz
Effective Output Capacitance
C
o(er)
C
o(tr)
104
390
pF
pF
Energy related
Time related
V
GS
= 0V
V
DS
= 0.8 • V
DSS
t
d(on)
t
r
t
d(off)
t
f
27
30
70
14
ns
ns
ns
ns
Resistive Switching Times
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
V
R
G
= 3
(External)
Q
g(on)
Q
gs
68
14
40
nC
nC
nC
V
GS
= 10V, V
DS
= 0.5
•
V
DSS
, I
D
= 0.5
•
I
D25
Q
gd
R
thJC
R
thCS
0.18
C/W
C/W
TO-247
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ.
Max
I
S
V
GS
= 0V
30
A
A
I
SM
V
SD
Repetitive, pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
150
1.4
V
t
rr
Q
RM
I
RM
160
1.7
21.0
ns
I
F
= 15A, -di/dt = 100A/
μ
s
μ
C
V
R
= 100V
A
Note 1.
Pulse test, t
300
s, duty cycle, d
2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development.
The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a “considered reflection” of the anticipated result.
IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs
and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072
5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXFT30N85XHV
IXFH30N85X
Fig. 1. Output Characteristics @ T
J
= 25ºC
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
30
25
20
15
10
5
V
= 10V
GS
60
50
40
30
20
10
0
V
= 10V
9V
GS
8V
7V
8V
7V
6V
5V
6V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
0
5
10
15
20
25
30
V
DS
– Volts
V
DS
– Volts
Fig. 4. R
DS(on)
Normalized to I
D
= 15A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T
J
= 125ºC
30
25
20
15
10
5
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
8V
GS
V
= 10V
GS
7V
6V
I
= 30A
D
I
= 15A
D
5V
4V
0
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
T
J
– Degrees Centigrade
V
DS
– Volts
Fig. 5. R
DS(on)
Normalized to I
D
= 15A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
V
= 10V
GS
T
J
= 125ºC
BV
DSS
T
J
= 25ºC
V
GS(th)
0
5
10
15
20
25
30
35
40
45
50
55
60
65
-60
-40
-20
0
20
40
60
80
100
120
140
160
T
J
– Degrees Centigrade
I
D
– Amperes
© 2016 IXYS CORPORATION, All Rights Reserved
IXFT30N85XHV
IXFH30N85X
Fig. 7. Maximum Drain Current vs. Case Temperature
Fig. 8. Input Admittance
35
30
25
20
15
10
5
35
30
25
20
15
10
5
T
J
= 125ºC
25ºC
– 40ºC
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
-50
-25
0
25
50
75
100
125
150
T
C
– Degrees Centigrade
V
GS
– Volts
Fig. 9. Transconductance
Fig. 10. Forward Voltage Drop of Intrinsic Diode
30
25
20
15
10
5
90
80
70
60
50
40
30
20
10
0
T
J
= – 40ºC
25ºC
125ºC
T
J
= 125ºC
T
J
= 25ºC
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
5
10
15
20
25
30
35
I
D
– Amperes
V
SD
– Volts
Fig. 11. Gate Charge
Fig. 12. Capacitance
10
8
100,000
10,000
1,000
100
V
= 425V
DS
I
I
= 15A
D
G
= 10mA
C
C
iss
6
oss
4
2
10
= 1 MHz
f
C
rss
0
1
0
10
20
30
40
50
60
70
1
10
100
1000
V
DS
– Volts
Q
G
– NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT30N85XHV
IXFH30N85X
Fig. 13. Output Capacitance Stored Energy
Fig. 14. Forward-Bias Safe Operating Area
100
10
1
40
35
30
25
20
15
10
5
R
Limit
)
DS(
on
25µs
100µs
1ms
10ms
100ms
0.1
T =
150ºC
J
DC
T
= 25ºC
C
Single Pulse
0
7
0
0
0
.
0
1
0
100
200
300
400
500
600
800
900
10
100
1,000
V
DS
– Volts
V
DS
– Volts
Fig. 15. Maximum Transient Thermal Impedance
aaaaa
0.3
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width – Seconds
© 2016 IXYS CORPORATION, All Rights Reserved
IXFT30N85XHV
IXFH30N85X
TO-268HV Outline
PINS:
1 – Gate
2 – Source
3 – Drain
TO-247 Outline
PINS:
1 – Gate
2,4 – Source
3 – Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_30N85X(S6-D901) 11-01-16
Disclaimer Notice – Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
