Littelfuse-IXYS-IXFK170N25X3
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Preliminary Technical Information
X3-Class HiPerFET
TM
Power MOSFET
V
DSS
= 250V
I
D25
= 170A
R
DS(on)
7.4m
IXFT170N25X3HV
IXFH170N25X3
IXFK170N25X3
TO-268HV (IXFT)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
G
S
D (Tab)
Symbol
V
DSS
Test Conditions
Maximum Ratings
TO-247 (IXFH)
T
J
= 25
C to 150
C
250
250
V
V
V
DGR
T
J
= 25
C to 150
C, R
GS
= 1M
V
GSS
V
GSM
Continuous
Transient
20
30
V
V
G
D
S
D (Tab)
I
D25
I
L(RMS)
T
C
= 25
C
External Lead Current Limit
170
160
A
A
TO-264 (IXFK)
I
DM
T
C
= 25
C, Pulse Width Limited by T
JM
400
A
I
A
T
C
= 25
C
T
C
= 25
C
85
A
J
E
AS
2.3
dv/dt
P
D
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25
C
20
V/ns
W
G
D
S
890
D (Tab)
D =
Drain
T
J
-55 … +150
150
C
C
C
T
JM
T
stg
G =
Gate
S =
Source
Tab =
Drain
-55 … +150
T
L
T
SOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Features
M
d
Mounting Torque (TO-247 & TO-264)
1.13 / 10
Nm/lb.in
International Standard Packages
Low R
DS(ON)
and Q
G
Avalanche Rated
Weight
TO-268HV
TO-247
TO-264
4
6
10
g
g
g
Low Package Inductance
Advantages
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ.
Max.
High Power Density
Easy to Mount
Space Savings
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
250
V
V
2.5
4.5
100 nA
Applications
I
DSS
10
A
1 mA
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
T
J
= 125
C
R
DS(on)
V
GS
= 10V, I
D
= 0.5
•
I
D25
, Note 1
6.1
7.4 m
DS100809C(11/17)
© 2017 IXYS CORPORATION, All Rights Reserved.
IXFT170N25X3HV IXFH170N25X3
IXFK170N25X3
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ.
Max
g
fs
V
DS
= 10V, I
D
= 60A, Note 1
Gate Input Resistance
66
110
S
R
Gi
1.3
C
iss
C
oss
C
rss
13.5
2.3
nF
nF
pF
V
GS
= 0V, V
DS
= 25V, f = 1MHz
1.6
Effective Output Capacitance
C
o(er)
C
o(tr)
800
pF
pF
Energy related
Time related
V
GS
= 0V
DS
= 0.8 • V
DSS
3280
V
t
d(on)
t
r
t
d(off)
t
f
18
10
62
7
ns
ns
ns
ns
Resistive Switching Times
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
V
R
G
= 5
(External)
Q
g(on)
Q
gs
190
55
nC
nC
nC
V
GS
= 10V, V
DS
= 0.5
•
V
DSS
, I
D
= 0.5
•
I
D25
Q
gd
45
R
thJC
R
thCS
0.14
C/W
TO-247
TO-264
0.21
0.15
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ.
Max
I
S
V
GS
= 0V
170
A
A
I
SM
V
SD
Repetitive, pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
680
1.4
V
t
rr
Q
RM
I
RM
140
770
11
ns
I
F
= 85A, -di/dt = 100A/
μ
s
nC
V
R
= 100V
A
Note 1.
Pulse test, t
300
s, duty cycle, d
2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development.
The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a “considered reflection” of the anticipated result.
IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs
and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072
5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXFT170N25X3HV IXFH170N25X3
IXFK170N25X3
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
Fig. 1. Output Characteristics @ T
J
= 25
o
C
180
160
140
120
100
80
800
700
600
500
400
300
200
100
0
V
= 10V
8V
GS
V
= 10V
GS
9V
8V
7V
6V
5V
4V
7V
60
40
6V
5V
20
0
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
25
30
V
DS
– Volts
V
DS
– Volts
Fig. 4. R
DS(on)
Normalized to I
D
= 85A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T
J
= 125
o
C
180
160
140
120
100
80
2.8
2.4
2.0
1.6
1.2
0.8
0.4
V
= 10V
8V
GS
V
= 10V
GS
7V
6V
I
= 170A
D
I
= 85A
D
5V
4V
60
40
20
0
-50
-25
0
25
50
75
100
125
150
0.5
1
1.5
2
2.5
3
V
DS
– Volts
T
J
– Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 85A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
= 10V
GS
BV
DSS
o
T =
125 C
J
o
V
GS(th)
T =
25 C
J
BV
DSS
-60
-40
-20
0
20
40
60
80
100
120
140
160
100
200
300
400
500
600
700
800
T
J
– Degrees Centigrade
I
D
– Amperes
© 2017 IXYS CORPORATION, All Rights Reserved.
IXFT170N25X3HV IXFH170N25X3
IXFK170N25X3
Fig. 7. Maximum Drain Current vs. Case Temperature
Fig. 8. Input Admittance
180
160
140
120
100
80
250
200
150
100
50
External Lead Current Limit
o
T
J
= 125
C
60
o
25 C
o
– 40
C
40
20
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
-50
-25
0
25
50
75
100
125
150
240
200
T
C
– Degrees Centigrade
V
GS
– Volts
Fig. 10. Forward Voltage Drop of Intrinsic Diode
Fig. 9. Transconductance
240
200
160
120
80
600
500
400
300
200
100
0
o
T
J
= – 40
C
o
25 C
o
125 C
o
T =
25 C
J
o
T =
125 C
J
40
0
0
40
80
120
160
200
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V
SD
– Volts
I
D
– Amperes
Fig. 12. Capacitance
Fig. 11. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
100,000
10,000
1,000
100
V
I
= 125V
DS
= 85A
C
D
iss
I
= 10mA
G
C
oss
rss
C
10
= 1 MHz
f
1
0
20
40
60
80
100
120
140
160
180
1
10
100
1,000
V
DS
– Volts
Q
G
– NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT170N25X3HV IXFH170N25X3
IXFK170N25X3
Fig. 13. Output Capacitance Stored Energy
Fig. 14. Forward-Bias Safe Operating Area
1000
100
10
24
20
16
12
8
R
DS(
on
Limit
)
25
μ
s
100
μ
s
1ms
1
o
T =
150 C
J
10ms
100ms
o
4
T
= 25
C
C
Single Pulse
DC
0
0.1
0
40
80
120
160
200
240
1
10
100
1,000
V
DS
– Volts
V
DS
– Volts
Fig. 15. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width – Second
© 2017 IXYS CORPORATION, All Rights Reserved.
IXYS REF: F_170N25X3 (28-S301) 4-24-17
IXFT170N25X3HV IXFH170N25X3
IXFK170N25X3
TO-268HV Outline
PINS:
1 – Gate
2 – Source
3 – Drain
TO-264 Outline
TO-247 Outline
D
A
A
0P
+
B
O 0K M
D B M
E
A2
A2
Q
S
D2
+
+
R
D1
D
0P1
4
1
2
3
ixys option
C
L1
E1
L
A1
b
b2
c
b4
PINS: 1
– Gate
e
+
O
2, 4 – Drain
3 – Source
J
M
C
A M
Terminals:
1
2
3
= Gate
= Drain
= Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
