Littelfuse-IXYS-IXFK32N100P
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Polar
TM
Power MOSFET
HiPerFET
TM
IXFK32N100P
IXFX32N100P
V
DSS
= 1000V
I
D25
= 32A
R
DS(on)
≤
320m
Ω
N-Channel Enhancement Mode
Avalanche Rated
t
rr
≤
300ns
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
TO-264 (IXFK)
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C, R
GS
= 1M
Ω
1000
1000
V
V
V
GSS
V
GSM
Continuous
Transient
±
30
±
40
V
V
G
D
S
(TAB)
I
D25
I
DM
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
32
75
A
A
I
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C
16
1.5
A
J
PLUS247 (IXFX)
dV/dt
P
D
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150
°
C
T
C
= 25
°
C
10
V/ns
W
960
T
J
T
JM
T
stg
-55 … +150
150
-55 … +150
°
C
°
C
°
C
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
T
L
T
SOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
300
260
°
C
°
C
Features
M
d
Mounting torque
Mounting force
(IXFK)
(IXFX)
1.13/10
Nm/lb.in.
Nm/lb.
z
Fast intrinsic diode
z
International standard packages
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
– easy
to drive and to protect
F
C
20..120/4.5..27
Weight
TO-264
TO-247
10
6
g
g
Symbol
Test Conditions
Characteristic Values
Advantages
z
(T
J
= 25
°
C unless otherwise specified)
Min.
Typ.
Max.
Easy to mount
Space savings
High power density
z
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
1000
V
V
z
3.5
6.5
±
200 nA
Applications:
I
DSS
V
DS
= V
DSS
V
GS
= 0V
50
μ
A
2.5 mA
z
Switched-mode and resonant mode
power supplies
T
J
= 125
°
C
z
DC-DC Converters
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
320 m
Ω
z
Laser Drivers
z
AC and DC motor controls
z
Robotics and servo controls
DS99777C(4/08)
© 2008 IXYS CORPORATION,All rights reserved
IXFK32N100P
IXFX32N100P
Symbol
Test Conditions
Characteristic Values
TO-264 (IXFK) Outline
(T
J
= 25
°
C unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1
V
GS
= 0V, V
DS
= 25V, f = 1MHz
Gate input resistance
13
21
S
C
iss
C
oss
C
rss
14.2
815
60
nF
pF
pF
R
Gi
1.50
Ω
t
d(on)
t
r
t
d(off)
t
f
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1
Ω
(External)
50
55
76
43
ns
ns
ns
ns
Millimeter
Inches
Dim.
Min.
Max.
Min.
Max.
A
A1
A2
b
b1
b2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
Q
g(on)
Q
gs
225
85
nC
nC
nC
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
c
0.53
0.83
.021
1.020
.780
.033
1.030
.786
Q
gd
94
D
E
e
25.91 26.16
19.81 19.96
5.46 BSC
R
thJC
R
thCS
0.13
°
C/W
°
C/W
.215 BSC
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
0.15
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
Source-Drain Diode
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
Symbol
Test Conditions
Characteristic Values
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
(T
J
= 25
°
C unless otherwise specified)
Min.
Typ.
Max.
I
S
V
GS
= 0V
32
A
A
V
PLUS 247
TM
(IXFX) Outline
I
SM
V
SD
Repetitive, pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
128
1.5
t
rr
Q
RM
I
RM
300
ns
μ
C
A
I
F
= 16A, -di/dt = 100A/
μ
s
V
R
= 100V, V
GS
= 0V
2.2
15
Note 1:
Pulse test, t
≤
300
μ
s; duty cycle, d
≤
2%.
Terminals: 1
– Gate
2 – Drain (Collector)
3 – Source (Emitter)
4 – Drain (Collector)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A
1
A
2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
PRELIMINARY TECHNICAL INFORMATION
b
b
1
b
2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
The product presented herein is under development.
The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation.
IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions,
and dimensions.
IXYS MOSFETs
and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2
6,759,692
6,710,463
7,005,734 B2
7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFK32N100P
IXFX32N100P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
70
60
50
40
30
20
10
0
32
28
24
20
16
12
8
V
GS
= 15V
10V
V
GS
= 15V
10V
9V
8V
9V
8V
7V
4
7V
0
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
V
DS
– Volts
V
DS
– Volts
Fig. 4. R
DS(on)
Normalized to I
D
= 16A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
32
28
24
20
16
12
8
V
GS
= 15V
10V
V
GS
= 10V
9V
I
D
= 32A
8V
I
D
= 16A
7V
6V
4
0
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
18
20
22
T
J
– Degrees Centigrade
V
DS
– Volts
Fig. 5. R
DS(on)
Normalized to I
D
= 16A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
35
30
25
20
15
10
5
2.6
2.4
2.2
2
T
J
= 125ºC
V
GS
= 10V
15V
1.8
1.6
1.4
1.2
1
– – – –
T
J
= 25ºC
0.8
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65
I
D
– Amperes
-50
-25
0
25
50
75
100
125
150
T
C
– Degrees Centigrade
© 2008 IXYS CORPORATION,All rights reserved
IXFK32N100P
IXFX32N100P
Fig. 8. Transconductance
Fig. 7. Input Admittance
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
T
J
= 125ºC
25ºC
– 40ºC
T
J
= – 40ºC
25ºC
125ºC
0
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
0
5
10
15
20
25
30
35
40
V
GS
– Volts
I
D
– Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
16
14
12
10
8
100
90
80
70
60
50
40
30
20
10
0
V
DS
= 500V
I
D
= 16A
I
G
= 10mA
T
J
= 125ºC
6
T
J
= 25ºC
4
2
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
50
100
150
200
250
300
V
SD
– Volts
Q
G
– NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
10,000
1,000
100
1.000
0.100
0.010
0.001
= 1 MHz
f
C
iss
C
oss
C
rss
10
0
5
10
15
20
25
30
35
40
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width – Seconds
V
DS
– Volts
IXYS reserves the right to change limits, test conditions,
and dimensions.
IXYS REF: F_32N100P(96)3-28-08-C
Disclaimer Notice – Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
