Littelfuse-IXYS-IXFN100N50P
| Part # | Littelfuse-IXYS-IXFN100N50P |
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Polar
TM
HiperFET
TM
Power MOSFET
V
DSS
= 500V
I
D25
= 90A
R
DS(on)
49m
IXFN100N50P
D
S
t
rr
200ns
G
S
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
miniBLOC
E153432
S
Symbol
V
DSS
Test Conditions
Maximum Ratings
G
T
J
= 25
C to 150
C
T
J
= 25
C to 150
C, R
GS
= 1M
500
500
V
V
V
DGR
S
V
GSS
V
GSM
Continuous
Transient
30
40
V
V
D
I
D25
I
DM
T
C
= 25
C
T
C
= 25
C, Pulse Width Limited by T
JM
90
A
A
G = Gate
S = Source
D = Drain
250
I
A
E
AS
T
C
= 25
C
T
C
= 25
C
100
5
A
J
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
dv/dt
P
D
I
S
I
DM
, V
DD
V
DSS
, T
J
150
C
T
C
= 25
C
20
V/ns
W
1040
T
J
T
JM
T
stg
-55 … +150
150
-55 … +150
C
C
C
Features
International Standard Package
Low
Intrinsic Gate Resistance
miniBLOC with Aluminum Nitride
Isolation
V
ISOL
50/60 Hz, RMS, t = 1minute
2500
3000
V~
V~
I
ISOL
1mA,
t = 1s
M
d
Mounting Torque for Base Plate
Terminal Connection Torque
1.5/13
1.3/11.5
Nm/lb.in
Nm/Ib.in
Low Package Inductance
Fast Intrinsic Rectifier
Low R
DS(on)
and Q
G
Weight
30
g
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C Unless Otherwise Specified)
Min.
500
3.0
Typ.
Max.
Applications
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
30V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
V
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
5.0
200 nA
Power Supplies
AC Motor Control
High Speed Power Switching
I
DSS
25
A
2 mA
T
J
= 125
C
Appliccation
R
DS(on)
V
GS
= 10V, I
D
= 50A, Note 1
49 m
DS99497F(8/17)
© 2017 IXYS CORPORATION,
All Rights Reserved
IXFN100N50P
Symbol
Test Conditions
Characteristic Values
SOT-227B (IXFN) Outline
(T
J
= 25
C Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20V, I
D
= 50A, Note 1
50
80
S
C
iss
C
oss
C
rss
20
1700
140
nF
pF
pF
V
GS
= 0V, V
DS
= 25V, f = 1MHz
t
d(on)
36
ns
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 50A
R
G
= 1
(External)
t
r
29
ns
ns
t
d(off)
110
t
f
26
ns
(M4 screws (4x) supplied)
Q
g(on)
Q
gs
240
96
nC
nC
nC
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 50A
Q
gd
78
R
thJC
R
thCS
0.12
C/W
C/W
0.05
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C Unless Otherwise Specified)
Min.
Typ.
Max.
100
250
1.5
I
S
V
GS
= 0V
A
A
V
I
SM
V
SD
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
t
rr
Q
RM
I
RM
200 ns
C
I
F
= 25A, -di/dt = 100A/
s
0.6
6.0
V
R
= 100V, V
GS
= 0V
A
Note
1. Pulse
test, t
300
s, duty cycle, d
2%.
IXYS Reserves the Right to Change Limits, Test Conditions,
and Dimensions.
IXYS MOSFETs
and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072
5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
6,534,343
6,583,505
6,710,405 B2
6,759,692
6,710,463
IXFN100N50P
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
Fig. 1. Output Characteristics @ T
J
= 25
o
C
100
90
80
70
60
50
40
30
20
10
0
220
200
180
160
140
120
100
80
V
= 10V
9V
GS
V
= 10V
8V
GS
7V
8V
7V
6V
5V
60
40
20
6V
0
0
0
0
1
2
3
4
5
0
5
10
15
20
25
V
DS
– Volts
V
DS
– Volts
Fig. 4. R
DS(on)
Normalized to I
D
= 50A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T
J
= 125
o
C
100
90
80
70
60
50
40
30
20
10
0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
V
= 10V
GS
V
= 10V
GS
7V
6V
5V
I
= 100A
D
I
= 50A
D
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
V
DS
– Volts
T
J
– Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 50A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs. Case Temperature
3.2
2.8
2.4
2.0
1.6
1.2
0.8
100
80
60
40
20
0
V
= 10V
GS
T =
125
o
C
J
T =
25
o
C
J
-50
-25
0
25
50
75
100
125
150
20
40
60
80
100
120
140
160
180
200
220
I
D
– Amperes
T
C
– Degrees Centigrade
© 2017 IXYS CORPORATION,
All Rights Reserved
IXFN100N50P
Fig. 7. Input Admittance
Fig. 8. Transconductance
160
140
120
100
80
160
140
120
100
80
T
J
= – 40
o
C
25
o
C
125
o
C
T
J
= 125
o
C
25
o
C
60
60
– 40
o
C
40
40
20
20
0
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0
20
40
60
80
100
120
140
160
180
V
GS
– Volts
I
D
– Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
300
250
200
150
100
50
10
9
8
7
6
5
4
3
2
1
0
V
I
= 250V
DS
= 50A
D
I
= 10mA
G
T
J
= 125
o
C
T
J
= 25
o
C
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
V
SD
– Volts
0
50
100
150
200
250
Q
G
– NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
100,000
10,000
1,000
100
1000
100
10
= 1 MHz
f
C
iss
R
Limit
DS(on)
100
μ
s
1ms
C
oss
10ms
DC
T
J
= 150
o
C
= 25
o
C
T
C
C
rss
Single Pulse
1
0
5
10
15
20
25
30
35
40
10
100
1,000
V
DS
– Volts
V
DS
– Volts
IXYS Reserves the Right to Change Limits, Test Conditions,
and Dimensions.
IXFN100N50P
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width – Seconds
© 2017 IXYS CORPORATION,
All Rights Reserved
IXYS REF: IXF_100N50P (9S-745) 2-08-06-A
Disclaimer Notice – Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
