Littelfuse-IXYS-IXFN360N15T2
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Advance Technical
Information
GigaMOS
TM
TrenchT2
HiperFET
TM
Power MOSFET
V
DSS
= 150V
I
D25
= 310A
R
DS(on)
≤
4.0m
Ω
IXFN360N15T2
t
rr
≤
150ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
miniBLOC, SOT-227
E153432
S
G
Symbol
V
DSS
Test Conditions
Maximum Ratings
T
J
= 25
°
C to 175
°
C
T
J
= 25
°
C to 175
°
C, R
GS
= 1M
Ω
150
150
V
V
V
DGR
S
V
GSS
V
GSM
Continuous
Transient
±
20
±
30
V
V
D
I
D25
T
C
= 25
°
C (Chip Capability)
310
A
G = Gate
D = Drain
S =
Source
I
L(RMS)
I
DM
External Lead Current Limit
T
C
= 25
°
C, Pulse Width Limited by T
JM
200
900
A
A
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
I
A
T
C
= 25
°
C
T
C
= 25
°
C
100
A
J
E
AS
TBD
dV/dt
P
D
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
175°C
T
C
= 25
°
C
20
V/ns
W
Features
1070
ꢀ
International Standard Package
ꢀ
miniBLOC, with Aluminium Nitride
Isolation
T
J
T
JM
T
stg
-55 … +175
175
-55 … +175
°
C
°
C
°
C
ꢀ
Isolation voltage 2500
V~
ꢀ
High Current Handling Capability
ꢀ
Fast Intrinsic Diode
T
L
T
SOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°
C
°
C
V
ISOL
50/60 Hz, RMS
t = 1 minute
t = 1 second
2500
3000
V~
V~
ꢀ
Avalanche Rated
I
ISOL
≤
1mA
ꢀ
Low R
DS(on)
M
d
Mounting Torque
Terminal Connection Torque
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
Advantages
Weight
30
g
ꢀ
Easy to Mount
Space Savings
High Power Density
ꢀ
ꢀ
Symbol
Test Conditions
Characteristic Values
Applications
(T
J
= 25
°
C, Unless Otherwise Specified)
Min.
150
2.5
Typ.
Max.
ꢀ
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±
20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
V
Synchronous Recification
ꢀ
DC-DC Converters
ꢀ
Battery Chargers
5.0
ꢀ
Switched-Mode and Resonant-Mode
Power Supplies
±
200 nA
I
DSS
50
μ
A
5 mA
ꢀ
DC Choppers
T
J
= 150
°
C
ꢀ
AC Motor Drives
ꢀ
Uninterruptible Power Supplies
ꢀ
High Speed Power Switching
Applications
R
DS(on)
V
GS
= 10V, I
D
= 60A,
Note 1
4.0 m
Ω
DS100180(08/09)
© 2009 IXYS CORPORATION,
All Rights Reserved
IXFN360N15T2
Symbol
Test Conditions
Characteristic Values
SOT-227B (IXFN) Outline
(T
J
= 25
°
C, Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10V, I
D
= 60A,
Note 1
V
GS
= 0V, V
DS
= 25V, f = 1MHz
140
230
S
C
iss
C
oss
C
rss
47.5
3060
665
nF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
50
170
115
265
ns
ns
ns
ns
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 100A
R
G
= 1
Ω
(External)
Q
g(on)
Q
gs
715
185
200
nC
nC
nC
(M4 screws (4x) supplied)
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 180A
Q
gd
R
thJC
R
thCS
0.14
°
C/W
°
C/W
0.05
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, Unless Otherwise Specified)
Min. Typ.
Max.
I
S
V
GS
= 0V
360
A
A
V
I
SM
V
SD
Repetitive, Pulse Width Limited by T
JM
I
F
= 60A, V
GS
= 0V,
Note 1
I
F
= 160A, V
GS
= 0V
1440
1.2
t
rr
Q
RM
150 ns
0.50
9.00
μ
C
-di/dt = 100A/
μ
s
V
R
= 60V
I
RM
A
Note 1. Pulse
test, t
≤
300
μ
s; duty cycle, d
≤
2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development.
The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
“considered reflection” of the anticipated result.
IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs
and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2
6,759,692
6,710,463
7,005,734 B2
7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFN360N15T2
Fig. 1. Output Characteristics
@ T
J
= 25ºC
Fig. 2. Extended Output Characteristics
@ T
J
= 25ºC
350
300
250
200
150
100
50
350
300
250
200
150
100
50
V
GS
= 15V
V
GS
= 10V
10V
8V
7V
7V
6V
6V
5V
5V
4V
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
DS
– Volts
V
DS
– Volts
Fig. 3. Output Characteristics
@ T
J
= 150ºC
Fig. 4. R
DS(on)
Normalized to I
D
= 180A Value vs.
Junction Temperature
350
300
250
200
150
100
50
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
GS
= 10V
V
GS
= 10V
8V
7V
I
D
= 360A
6V
5V
I
D
= 180A
4V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
-25
0
25
50
75
100
125
150
175
V
DS
– Volts
T
J
– Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 180A Value vs.
Drain Current
Fig. 6. Drain Current vs. Case Temperature
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
220
200
180
160
140
120
100
80
V
GS
= 10V
External Lead Current Limit
T
J
= 175ºC
60
T
J
= 25ºC
40
20
0
0
50
100
150
200
250
300
350
-50
-25
0
25
50
75
100
125
150
175
I
D
– Amperes
T
C
– Degrees Centigrade
© 2009 IXYS CORPORATION,
All Rights Reserved
IXFN360N15T2
Fig. 7. Input Admittance
Fig. 8. Transconductance
200
180
160
140
120
100
80
450
400
350
300
250
200
150
100
50
T
J
= – 40ºC
T
J
= 150ºC
25ºC
25ºC
– 40ºC
150ºC
60
40
20
0
0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0
20
40
60
80
100
120
140
160
180
200
220
V
GS
– Volts
I
D
– Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
350
300
250
200
150
100
50
V
DS
= 75V
I
I
D
= 180A
G
= 10mA
T
J
= 150ºC
T
J
= 25ºC
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
100
200
300
400
500
600
700
800
V
SD
– Volts
Q
G
– NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
100,000
10,000
1,000
100
1,000.0
100.0
10.0
1.0
R
Limit
DS(on)
25µs
C
iss
100µs
External Lead Limit
C
oss
rss
1ms
10ms
T
T
= 175ºC
= 25ºC
J
C
100ms
C
DC
= 1 MHz
5
f
Single Pulse
0.1
0
10
15
20
25
30
35
40
1
10
100
1,000
V
DS
– Volts
V
DS
– Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_360N15T2 (9V)08-19-09
IXFN360N15T2
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
340
300
260
220
180
140
100
300
260
220
180
140
100
60
R
G
= 1
ꢀ
, V
GS
= 10V
V
DS
= 75V
R
G
= 1
Ω
, V
GS
= 10V
V
DS
= 75V
I
D
= 100A
T
J
= 25ºC
T
J
= 125ºC
I
D
= 200A
40
60
80
100
120
140
160
180
200
25
35
45
55
65
75
85
95
105
115
125
T
J
– Degrees Centigrade
I
D
– Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
700
600
500
400
300
200
100
0
220
700
600
500
400
300
200
100
0
210
t
f
t
d(off)
– – – –
t
r
t
d(on)
– – – –
200
180
160
140
120
100
80
180
150
120
90
R
G
= 1
Ω
, V
GS
= 10V
T
J
= 125ºC,
V
GS
= 10V
V
DS
= 75V
V
DS
= 75V
I
D
= 200A
I
D
= 200A
I
D
= 100A
60
I
D
= 100A
30
0
25
35
45
55
65
75
85
95
105
115
125
1
2
3
4
5
6
7
8
9
10
R
G
– Ohms
T
J
– Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
900
800
700
600
500
400
300
200
100
900
800
700
600
500
400
300
200
100
700
600
500
400
300
200
100
0
240
220
200
180
160
140
120
100
t
f
t
d(off)
– – – –
t
f
t
d(off)
– – – –
R
G
= 1
ꢀ
, V
GS
= 10V
T
J
= 125ºC,
V
GS
= 10V
V
DS
= 75V
V
DS
= 75V
I
D
= 200A, 100A
T
J
= 125ºC
T
J
= 25ºC
1
2
3
4
5
6
7
8
9
10
40
60
80
100
120
140
160
180
200
I
D
– Amperes
R
G
– Ohms
© 2009 IXYS CORPORATION,
All Rights Reserved
IXFN360N15T2
Fig. 19. Maximium Transient Thermal Impedance
.sadgsfgsf
0.200
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width – Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_360N15T2 (9V)08-19-09
Disclaimer Notice – Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
