Littelfuse-IXYS-IXFN50N80Q2
| Part # | Littelfuse-IXYS-IXFN50N80Q2 |
Download  | Littelfuse-IXYS-IXFN50N80Q2 |
HiPerFET
TM
Power MOSFETs
Q-Class
IXFN50N80Q2
V
DSS
I
D25
= 800V
= 50A
R
DS(on)
≤
160m
Ω
t
rr
≤
300ns
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
, Low Intrinsic R
G
High dV/dt, Low t
rr
miniBLOC, SOT-227
E153432
S
G
Symbol
V
DSS
Test Conditions
Maximum Ratings
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C, R
GS
= 1M
Ω
800
800
V
V
V
DGR
S
V
GSS
V
GSM
Continuous
Transient
±
30
±
40
V
V
D
I
D25
I
DM
T
C
= 25
°
C
T
C
= 25
°
C, Pulse Width Limited by T
JM
50
A
A
G = Gate
S =
Source
D = Drain
200
I
A
T
C
= 25
°
C
T
C
= 25
°
C
50
5
A
J
E
AS
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
dv/dt
P
D
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25
°
C
20
V/ns
W
1135
Features
T
J
T
JM
T
stg
-55 … +150
150
-55 … +150
°
C
°
C
°
C
z
International Standard Package
z
miniBLOC, with Aluminium Nitride
Isolation
T
L
T
SOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°
C
°
C
z
Isolation Voltage 2500
V~
z
High Current Handling Capability
z
Fast Intrinsic Rectifier
V
ISOL
50/60 Hz, RMS
I
ISOL
≤
1mA
t = 1 minute
t = 1 second
2500
3000
V~
V~
z
Avalanche Rated
z
M
d
Mounting Torque
Terminal Connection Torque
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
Low R
DS(on)
Advantages
Weight
30
g
z
Easy to Mount
Space Savings
High Power Density
z
z
Symbol
Test Conditions
Characteristic Values
Applications
(T
J
= 25
°
C, Unless Otherwise Specified)
Min.
800
3.0
Typ.
Max.
z
Switch-Mode and Resonant-Mode
Power Supplies >500kHz Switching
z
DC-DC Converters
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±
30V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
V
5.5
z
±
200 nA
DC Choppers
z
Pulse Generation
z
Laser Drivers
I
DSS
50
μ
A
3 mA
T
J
= 125
°
C
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note
1
160 m
Ω
DS99028C(01/10)
© 2010 IXYS CORPORATION,
All Rights Reserved
IXFN50N80Q2
Symbol
Test Conditions
Characteristic Values
SOT-227B (IXFN) Outline
(T
J
= 25
°
C, Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note
1
V
GS
= 0V, V
DS
= 25V, f = 1MHz
32
48
S
C
iss
C
oss
C
rss
13.5
1180
213
nF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
26
25
60
13
ns
ns
ns
ns
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1
Ω
(External)
Q
g(on)
Q
gs
260
56
nC
nC
nC
(M4 screws (4x) supplied)
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Q
gd
120
R
thJC
R
thCS
0.11
°
C/W
°
C/W
0.05
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, Unless Otherwise Specified)
Min. Typ.
Max.
I
S
V
GS
= 0V
50
A
A
V
I
SM
V
SD
Repetitive, Pulse Width Limited by T
JM
I
F
= 50A, V
GS
= 0V,
Note 1
200
1.5
t
rr
Q
RM
300 ns
I
F
= 25A, V
GS
= 0V
1.1
8.0
μ
C
-di/dt = 100A/
μ
s
V
R
= 100V
I
RM
A
Note 1. Pulse
test, t
≤
300
μ
s, duty cycle, d
≤
2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs
and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2
6,759,692
6,710,463
6,771,478 B2 7,071,537
IXFN50N80Q2
Fig. 1. Output Characteristics @ T
J
= 25ºC
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
100
90
80
70
60
50
40
30
20
10
0
50
45
40
35
30
25
20
15
10
5
V
GS
= 10V
7V
V
GS
= 10V
7V
6V
5V
6V
5V
0
0
0
0
1
2
3
4
5
6
7
8
0
3
6
9
12
15
18
21
24
27
30
V
DS
– Volts
V
DS
– Volts
Fig. 4. R
DS(on)
Normalized to I
D
= 25A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T
J
= 125ºC
50
45
40
35
30
25
20
15
10
5
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
V
GS
= 10V
V
GS
= 10V
6V
5V
I
D
= 50A
I
D
= 25A
0
2
4
6
8
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
150
T
J
– Degrees Centigrade
V
DS
– Volts
Fig. 5. R
DS(on)
Normalized to I
D
= 25A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
60
50
40
30
20
10
0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
10
20
30
40
50
60
70
80
90
100
110
-50
-25
0
25
50
75
100
125
150
I
D
– Amperes
T
C
– Degrees Centigrade
© 2010 IXYS CORPORATION,
All Rights Reserved
IXFN50N80Q2
Fig. 8. Transconductance
Fig. 7. Input Admittance
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
T
J
= – 40ºC
25ºC
T
J
= 125ºC
25ºC
– 40ºC
125ºC
0
10
20
30
40
50
60
70
80
90
100
2.5
0.2
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
1.4
40
V
GS
– Volts
I
D
– Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
160
140
120
100
80
V
DS
= 400V
I
I
D
= 25A
G
= 10mA
60
T
J
= 125ºC
40
T
J
= 25ºC
20
0
4
0
1
6
0
2
40
0.4
0.6
0.8
1.0
1.2
0
80
120
200
V
SD
– Volts
Q
G
– NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Maximum Transient Thermal Impedance
100,000
10,000
1,000
100
0.200
0.100
= 1 M
H
z
f
C
iss
C
oss
0.010
C
rss
0.001
0.00001
5
10
15
20
25
30
35
0.0001
0.001
0.01
0.1
1
10
V
DS
– Volts
Pulse Width – Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF:F_50N80Q2(95)1-18-10-C
Disclaimer Notice – Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
